XX1005-BD [MIMIX]
8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler; 8.0-12.0 / 16.0-24.0 GHz的砷化镓MMIC有源倍频器
| 型号： | XX1005-BD |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
| 文件： | 总6页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD
Features
Chip Device Layout
Excellent Mixer Driver
2-Stage Active Design
Can be Used to Drive XR1002 Receiver
+16 dBm Output Drive
XX1005-BD
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s two stage 8.0-12.0/16.0-24.0 GHz
GaAs MMIC doubler has a +16.0 dBm output drive
and is an excellent LO doubler that can be used to
drive fundamental mixer devices. It is also well suited
to drive Mimix's XR1002 receiver device.This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.This
device is well suited for Millimeter-wave
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
+6.0 VDC
195 mA
+0.3 VDC
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Level at the Output
RF Input Power (RF Pin)
Output Power at +12.0 dBm Pin (Pout)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id1,2) (Vd=3.5V,Vg1=-0.9V,Vg2=-0.3V Typical)
Units
GHz
GHz
dB
Min.
8.0
16.0
-
-
-
-
-
-
Typ.
-
-
Max.
12.0
24.0
-
-
-
TBD
TBD
-25.0
+12.0
+16.0
+3.5
-0.9
-0.3
135
dB
dBc
dBm
dBm
VDC
VDC
VDC
mA
-
-
+5.5
+0.1
+0.1
165
-1.2
-1.2
-
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD
Doubler Measurements
XX1005-BD: Pout (dBm) vs. Fin (GHz)
Pin = 12dBm, VD1 = VD2 = 3.5V, VG1 = -0.9V, VG2 = -0.6 to 0.1V
20
15
10
5
, LO Power (dBm)=12, VG2 (V)=-0.6
, LO Power (dBm)=12, VG2 (V)=-0.5
, LO Power (dBm)=12, VG2 (V)=-0.4
, LO Power (dBm)=12, VG2 (V)=-0.3
, LO Power (dBm)=12, VG2 (V)=-0.2
, LO Power (dBm)=12, VG2 (V)=-0.1
, LO Power (dBm)=12, VG2 (V)=0
, LO Power (dBm)=12, VG2 (V)=0.1
, LO Power (dBm)=12, VG2 (V)=-0.6
, LO Power (dBm)=12, VG2 (V)=-0.5
, LO Power (dBm)=12, VG2 (V)=-0.4
, LO Power (dBm)=12, VG2 (V)=-0.3
, LO Power (dBm)=12, VG2 (V)=-0.2
, LO Power (dBm)=12, VG2 (V)=-0.1
, LO Power (dBm)=12, VG2 (V)=0
, LO Power (dBm)=12, VG2 (V)=0.1
0
-5
-10
-15
-20
5
6
7
8
9
10
11
12
13
14
15
Fin (GHz)
XX1005-BD_R11C11: Pout (dBm) vs. Input Frequency (GHz)
Pin = 12dBm, VD1 = VD2 = 3.5V, VG1 = -0.9V, VG2 = -0.3V
20
16
12
8
Pout (2xFin)
4
0
-4
-8
Pout (Fin)
-12
-16
-20
8
9
10
11
12
13
Input Frequency (GHz)
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD
Mechanical Drawing
0.503
0.683
0.884
1.085
(0.020)
(0.027) (0.035) (0.043)
0.890
(0.035)
2
3
4
5
XX1005-BD
0.356
0.356
1
6
(0.014)
(0.014)
0.0
1.620
0.0
(0.064)
(Note: Engineering designator is 20DBL0451)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.891 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vg2)
Bond Pad #4 (Vd1)
Bond Pad #5 (Vd2)
Bond Pad #6 (RF Out)
Bypass Capacitors - See App Note [2]
Vd1 Vd2
Bias Arrangement
Vg2
Vg1
Vg2
Vd1
Vd2
Vg1
2
3
4
5
XX1005-BD
RF In
1
6
RF In
RF Out
RF Out
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD
App Note [1] Biasing - It is recommended to separately bias each doubler stage Vd1 through Vd2 at Vd(1,2)=3.5V with Id1=25mA
and Id2=110mA. Separate biasing is recommended if the doubler is to be used at high levels of saturation, where gate rectification
will alter the effective gate control voltage. It is also recommended to use active biasing to keep the currents constant as the RF
power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltages needed to do this are Vg1=-0.9V and Vg2=-0.3V.Typically the gate is protected with Silicon
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement -
For individual Stage Bias (Recommended for doubler applications) -- Each DC pad (Vd1, 2 and Vg1, 2) needs to have DC bypass
capacitance (~100-200 pf) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTFTables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Channel
Rth
MTTF Ho rs
FITs
Temperat re
Temperat re
55 deg Celsius
75 deg Celsius
95 deg Celsius
deg Celsius
deg Celsius
deg Celsius
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions: Vd1=Vd2=3.5V, Id1=25 mA, Id2=110 mA
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD
Device Schematic
Typical Application
XR1002
IF Out
2 GHz
BPF
IR Mixer
RF IN
17.7-19.7 GHz
AGC Control
Atten=0-12dB
LO(+9.0dBm)
XX1005-BD
7.85-8.85 GHz
9.85-10.85 GHz
X2
15.7-17.7 GHz (USB Operation)
19.7-21.7 GHz (LSB Operation)
Mimix Broadband MMIC-based 18.0-24.0 GHz Doubler/Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 24.0 GHz)
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
8.0-12.0/16.0-24.0 GHz GaAs MMIC
Active Doubler
January 2007 - Rev 17-Jan-07
X1005-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable
grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should be
clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in
a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die.
An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
RoHS Compliant Parts - All Mimix products are RoHS compliant unless specifically ordered with Tin-Lead finish.
Ordering Information
Part Number for Ordering
XX1005-BD-000V
XX1005-BD-EV1
Description
“V”- vacuum release gel paks
XX1005-BD die evaluation module
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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