XA1000-BD-EV1 [MIMIX]
DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator; DC - 18.0 GHz的砷化镓MMIC 5位数字衰减器
| 型号： | XA1000-BD-EV1 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator |
| 文件： | 总6页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DC-18.0 GHz GaAs MMIC
5-Bit Digital Attenuator
August 2007 - Rev 21-Aug-07
A1000-BD
Features
Chip Device Layout
5-Bit Attenuator
27.9 dB Attenuation Range
24 dBm P1dB Input Compression
0.9 dB LSB
Digital Control (0.0 to 3.3 V)
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Absolute Maximum Ratings
Mimix Broadband’s DC- 18.0 GHz attenuator has an
LSB value of 0.9 dB and is controlled with 5 digital
binary inputs, which meet the LVCMOS specifications.
The 2.4 x 1.6 mm2 device uses a single supply voltage
of -7.5 V. This MMIC uses Mimix Broadband’s 0.5 µm
GaAs PHEMT device model technology, and is based
upon optical gate lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for radar and
applications.
Supply Voltage (Vss)
Supply Current (Iss)
Input Power (Pin)
-10.0 VDC
10.0 mA
30.0 dBm
Storage Temperature (Tstg) -65 to +165 OC
3
Operating Temperature (Ta) -55 to MTTF Table
3
Channel Temperature (Tch) MTTF Table
(3) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Units
GHz
dB
dB
dB
dB
dBm
dB
Min.
DC
-
-
-
-
24.0
-
-
-
-
-
-
-
-
Typ.
-
Max.
18.0
-
-
-
-
-
-
Frequency Range (f)
Attenuation Range
27.9
5.5
17.0
15.0
25.0
<0.5
<1
<10
<20
15
Insertion Loss @ 10 GHz (S21), Reference Level
Input Return Loss (S11), All States
Output Return Loss (S22), All States
Input Power at 1 dB Compression (P1dB)
RMS Attenuation Error
Max Attenuation Error
RMS Phase Error
dB
-
-
-
deg
deg
deg
nS
VDC
mA
V
Max Phase Error
Phase Variation @ 10 GHz
Switching Speed
-
45.0
-
-
5
-
Vss
Iss
-7.5
9
Vcontrol High
Vcontrol Low
3.3
0
V
0.8
Page 1 of 6
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
DC-18.0 GHz GaAs MMIC
5-Bit Digital Attenuator
August 2007 - Rev 21-Aug-07
A1000-BD
Attenuator Measurements
Insertion Loss - Reference State
Attenuation - All States
35
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
0
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
Frequency [GHz]
Frequency [GHz]
Input Return Loss - All States
Output Return Loss - All States
0
-5
0
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
Frequency [GHz]
Frequency [GHz]
Attenuation Error vs State
Attenuation Error
3
3
2.5
2
RMS
MAX
f=0.2 GHz
f=1 GHz
2
1
f=10 GHz
0
1.5
1
-1
-2
-3
0.5
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
0
2
4
6
8
10
12
14
16
18
Attenuation State
Frequency [GHz]
Page 2 of 6
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
DC-18.0 GHz GaAs MMIC
5-Bit Digital Attenuator
August 2007 - Rev 21-Aug-07
A1000-BD
Attenuator Measurements (cont.)
Phase Error
Phase Error - All States
20
18
16
14
12
10
8
30
20
10
0
-10
-20
-30
6
RMS
MAX
4
2
0
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
Frequency [GHz]
Frequency [GHz]
RMS Attenuation Error vs Temp
Insertion Loss vs Temp - Reference State
10
9
8
7
6
5
4
3
2
1
0
3
T=25°C
T=60°C
T=95°C
2.5
2
1.5
1
T=25°C
0.5
0
T=60°C
T=95°C
2
4
6
8
10
12
14
16
18
2
4
6
8
10
12
14
16
18
Frequency [GHz]
Frequency [GHz]
Attenuation Error at 10 GHz vs Temp
RMS Phase Error vs Temp
3
2
20
18
16
14
12
10
8
T=25°C
T=60°C
T=95°C
T=25°C
T=60°C
T=95°C
1
0
-1
-2
-3
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32
2
4
6
8
10
12
14
16
18
Attenuation State
Frequency [GHz]
Page 3 of 6
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
DC-18.0 GHz GaAs MMIC
5-Bit Digital Attenuator
August 2007 - Rev 21-Aug-07
A1000-BD
Attenuator Measurements (cont.)
Relative Attenuation vs Input Power @ 10 GHz - Major States
Relative Phase vs Input Power @ 10 GHz - Major States
5
4
5
4
3
3
2
2
1
1
0
0
-1
-2
-3
-4
-5
-1
-2
-3
-4
-5
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Pin [dBm]
Pin [dBm]
LogicTruthTable - Major States
Attenuation I1
Level (dB)
I2
I3
I4
I5
0
0
1
0
0
0
0
-
0
0
1
0
0
0
0
0
0
1
0
0
-
0
0
0
0
1
0
-
0
0
0
0
0
1
-
0.9
1.8
3.6
7.2
14.4
-
-
27.9
1
1
1
1
1
Page 4 of 6
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
DC-18.0 GHz GaAs MMIC
5-Bit Digital Attenuator
August 2007 - Rev 21-Aug-07
A1000-BD
Mechanical Drawing
0.947
1.347
1.747
(0.037) (0.053) (0.069)
0.747
1.147
1.547
(0.029) (0.045) (0.061)
1.550
(0.061)
2
3
4
5
6
7
0.858
(0.034)
0.858
8
1
(0.034)
0.0
0.0
2.376
(0.094)
(Note: Engineering designator is I0005359)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.28 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Input 1)
Bond Pad #3 (Input 2)
Bond Pad #4 (Input 3)
Bond Pad #5 (Vss)
Bond Pad #6 (Input 4)
Bond Pad #7 (Input 5)
Bond Pad #8 (RF Out)
Bias Arrangement
Bypass Capacitors - See App Note [2]
Page 5 of 6
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
DC-18.0 GHz GaAs MMIC
5-Bit Digital Attenuator
August 2007 - Rev 21-Aug-07
A1000-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As
used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical
component is any component of a life support device or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in anti-
static containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation.
Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the back-
side to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The
mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die
Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die
periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If
eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the
die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing
action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided).The
work station temperature should be 310ºC +/- 10º C. Exposure to these extreme temperatures should be kept to
minimum.The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air
bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the
die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99%
pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge
or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding
is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized.
Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the
package or substrate. All bonds should be as short as possible.
Ordering Information
XA1000-BD-000V
XA1000-BD-EV1
Where“V”is RoHS compliant die packed in vacuum release gel paks
XA1000 die evaluation module
Page 6 of 6
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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