38MPA0547 [MIMIX]
Wide Band Medium Power Amplifier, 35000MHz Min, 45000MHz Max, DIE-11;
| 型号： | 38MPA0547 |
| 厂家： | 
MIMIX BROADBAND |
| 描述： | Wide Band Medium Power Amplifier, 35000MHz Min, 45000MHz Max, DIE-11 射频 微波 |
| 文件： | 总6页 (文件大小：1791K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
35.0-45.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
38MPA0547
Chip Device Layout
Features
Excellent Transmit Output Stage
Output Power Adjust
23.0 dB Small Signal Gain
+25.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s four stage 35.0-45.0 GHz GaAs
MMIC power amplifier has a small signal gain of 23.0
dB with a +25.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3,4)
Gate Bias Voltage (Vg)
Input Power (Pin)
+6.0 VDC
45,80,165,325 mA
+0.3 VDC
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table
1
1
Channel Temperature (Tch) MTTF Table
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Parameter
Frequency Range (f)
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (ΔS21)
Units
GHz
dB
dB
dB
Min.
35.0
-
-
-
-
-
-
Typ.
-
10.0
8.0
23.0
+/-1.0
45.0
+25.0
+5.0
-0.7
35
Max.
45.0
-
-
-
-
-
-
+5.5
0.0
40
70
150
295
dB
dB
Reverse Isolation (S12)
2
Output Power for 1dB Compression (P1dB)
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V,Vg=-0.7V Typical)
Supply Current (Id4) (Vd=5.0V,Vg=-0.7V Typical)
(2) Measured using constant current.
dBm
VDC
VDC
mA
mA
mA
mA
-
-1.0
-
-
-
-
60
125
245
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
35.0-45.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
38MPA0547
Power Amplifier Measurements
0547: Sparams at Vd=5V, Vg=-0.7V
S Parameters
30
28
26
24
22
20
18
16
14
12
10
8
37 GHz
24.03 dB
40 GHz
45 GHz
28
26
24
22
20
18
16
14
12
10
8
24.16 dB
23.44 dB
6
4
6
2
4
0
2
-2
0
-4
-2
-6
-4
-8
-6
-10
-12
-14
-16
-18
-20
-8
DB(|S(1,1)|)
Al l o ur c es
-10
-12
-14
-16
S
DB(|S(1,2)|)
Al l o ur c es
S
DB(|S(2,2)|)
Al l o ur c es
S
DB(|S(2,1)|)
Al l o ur c es
S
35
36
37
38
39
40
41
42
43
44
45
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Frequency (GHz)
Frequency (GHz)
28
27
26
25
24
23
22
21
20
P-1dB
0547: S12 at Vd=5V, Vg=-0.7V
0
-5
Linear Gain
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
-90
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50
Frequency (GHz)
35
36
37
38
39
40
41
42
43
44
45
Frequency (GHz)
OIP3 Measurements at Vd=4.5V, Id=500 mA
3 samples
C/I vs Pout @ 4.5 V / 500 mA (37-40 GHz)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
40
C/I vs Pin @ 4.5 V / 500 mA
Projected IP3
38
36
34
32
30
28
26
24
22
20
OIP3 at 4.5V, 500 mA
0
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
37
37.5
38
38.5
39
39.5
40
Ouput Power per Tone (dBm)
Frequency
Page 2 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
35.0-45.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
38MPA0547
Mechanical Drawing
0.225
0.625
1.025
2.025
2.225
(0.009)
(0.025)
(0.040)
(0.080)
(0.088)
1.500
(0.059)
5
6
2
3
4
0.946
1
(0.037)
0.486
7
(0.019)
11
10
9
8
0.0
2.410
(0.095)
0.400 0.599 0.799 0.999
(0.016) (0.024) (0.031) (0.039)
0.0
(Note: Engineering designator is 38H4PBA0157)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.241 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
Bond Pad #5 (Vdr4)
Bond Pad #6 (Vd4)
Bond Pad #7 (RF Out)
Bond Pad #8 (Vg4)
Bond Pad #9 (Vg3)
Bond Pad #10 (Vg2)
Bond Pad #11 (Vg1)
Bias Arrangement
Vd1
Bypass Capacitors - See App Note [2]
Vd2
Vd3
Vd4
5
6
2
3
4
1
RF In
Pre-production
7
RF Out
11
10
9
8
Vg4
Vg1
Vg3
Vg2
Page 3 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
35.0-45.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
38MPA0547
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd(1,2,3,4)=5.0V with Id1=35mA, Id2=60mA,
Id3=125mA and Id4=245mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will
alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a
total drain current Id(total)=465 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature
vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may
be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The
gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V.
Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3] Output Power Adjust Using Gate Control - This device has a very useful additional feature.The output power can be adjusted by
lowering the individual or combined gate voltages towards pinch off without sacrificing much in the way of Input/Output 3rd Order Intercept Point.
Improvements to the IIP3/OIP3 data shown here while attenuating the gain are also possible with individual gate control. Data here has been taken
using combined gate control (all gates changed together) to lower the device's output power.The results are shown below. Additionally, the
accompanying graphs show the level and linearity of the typical attenuation achievable as the gate is adjusted at various levels until pinch-off.
Turn-off 38MPA0547: Pin=+5 dBm, linear decrease from 5V/500 mA to 0V/0 mA (Vgs=-1.6 V)
30
25
20
15
10
5
0
37
37.5
38
38.5
39
39.5
40
-5
-10
-15
-20
-25
-30
Frequency (GHz)
Page 4 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
35.0-45.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
38MPA0547
MTTFTable (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Channel
Rth
MTTF Hours
FITs
Temperature
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
deg Celsius
deg Celsius
deg Celsius
C/W
C/W
C/W
E+
E+
E+
E+
E+
E+
Bias Conditions: Vd1=Vd2=Vd3=Vd4=5.0V, Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA
Typical Application
IF In
2 GHz
38MPA0547
XU1004
Coupler
RF OUT
37.0-39.5 GHz
Mixer
Buffer
X2
LO(+2.0dBm)
Pre-production
Mimix Broadband MMIC-based 35.0-45.0 GHz Transmitter Block Diagram
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
(Changing LO and IF frequencies as required allows design to operate as high as 45 GHz)
Mimix Broadband's 35.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 128 QAM.The receiver can be used in upper and lower sideband applications from 35.0-45.0 GHz.
Page 5 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
35.0-45.0 GHz GaAs MMIC
Power Amplifier
August 2005 - Rev 04-Aug-05
38MPA0547
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
2
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
+
Germanium should be avoided).The work station temperature should be 310 C 10 C. Exposure to these
-
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Page 6 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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