LSU403(8SOIC) [MICROSS]
Transistor;
| 型号： | LSU403(8SOIC) |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LSU403
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U403
The LSU403 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
The LSU403 is a high-performance monolithic dual
| V GS1‐2 / T| = 10µV/°C TYP.
en = 6nV/Hz @ 10Hz TYP.
Vp = 2.5V TYP.
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU403 features a 5-
mV offset and 10-µV/°C drift. The LSU403 is a direct
replacement for discontinued Siliconix LSU403.
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
The 8 Pin P-DIP and 8 Pin SOIC provide ease of
manufacturing, and the symmetrical pinout prevents
improper orientation.
‐65°C to +150°C
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
‐VDSO
‐IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
50V
50V
10mA
(See Packaging Information).
Maximum Power Dissipation
Device Dissipation @ Free Air – Total
LSU403 Applications:
300mW
Wideband Differential Amps
High-Speed,Temp-Compensated Single-Ended
Input Amps
High-Speed Comparators
Impedance Converters and vibrations detectors.
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1‐2 / T| max.
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
25
µV/°C
VDG=10V, ID=200µA
TA=‐55°C to +125°C
VDG=10V, ID=200µA
| V GS1‐2 | max.
10
mV
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
BVGGO
CHARACTERISTICS
Breakdown Voltage
Gate‐To‐Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
MIN.
50
±50
TYP.
60
‐‐
MAX.
‐‐
‐‐
UNITS
V
V
CONDITIONS
VDS = 0
I G= 1nA
ID=1nA
ID= 0
IS= 0
YfSS
YfS
2000
1000
‐‐
‐‐
7000
2000
µmho
µmho
VDG= 10V
VDG= 15V
VGS= 0V f = 1kHz
ID= 200µA f = 1kHz
Typical Operation
Click To Buy
|YFS1‐2 / Y FS|
Mismatch
DRAIN CURRENT
Full Conduction
‐‐
0.6
3
%
IDSS
|IDSS1‐2 / IDSS
0.5
‐‐
‐‐
1
10
5
mA
%
VDG= 10V
VGS= 0V
|
Mismatch at Full Conduction
GATE VOLTAGE
VGS(off) or Vp
VGS(on)
Pinchoff voltage
Operating Range
GATE CURRENT
‐0.5
‐‐
‐‐
‐‐
‐2.5
‐2.3
V
V
VDS= 15V
VDS=15V
ID= 1nA
ID=200µA
‐IGmax.
‐IGmax.
‐IGSSmax.
‐IGSSmax.
Operating
‐‐
‐‐
‐‐
5
‐4
‐‐
‐‐
5
‐15
‐10
100
5
pA
nA
pA
pA
VDG= 15V ID= 200µA
High Temperature
At Full Conduction
High Temperature
OUTPUT CONDUCTANCE
Full Conduction
TA= +125°C
VDS =0
VDG= 15V
TA= +125°C
YOSS
YOS
‐‐
‐‐
‐‐
20
2
µmho
µmho
VDG= 10V
VDG= 15V
VGS= 0V
Operating
0.2
ID= 500µA
COMMON MODE REJECTION
CMR
‐20 log | V GS1‐2/ V DS
|
95
‐‐
‐‐
dB
VDS = 10 to 20V
ID=30µA
NOISE
Figure
Voltage
CAPACITANCE
Input
VDS= 15V VGS= 0V
RG= 10M
NF
en
‐‐
‐‐
‐‐
20
0.5
‐‐
dB
nV/√Hz
f= 100Hz NBW= 6Hz
VDS=15V ID=200µA f=10Hz NBW=1Hz
VDS= 15V ID= 200µA f= 1MHz
CISS
CRSS
‐‐
‐‐
‐‐
‐‐
8
1.5
pF
pF
Reverse Transfer
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
PDIP / SOIC (Top View)
Micross Components Europe
Available Packages:
LSU403 in PDIP / SOIC
LSU403 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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