LSJ109 [MICROSS]
N-CHANNEL JFET; N沟道JFET
| 型号： | LSJ109 |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | N-CHANNEL JFET |
| 文件： | 总1页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LSJ109
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J109
FEATURES
This n-channel JFET is optimised for low noise high
DIRECT REPLACEMENT FOR SILICONIX J109
LOW ON RESISTANCE
FAST SWITCHING
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
rDS(on) ≤ 12Ω
t(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
‐55°C to +150°C
‐55°C to +150°C
LSJ109 Benefits:
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Low On Resistance
Low insertion loss
Low Noise
350mW
LSJ109 Applications:
Gate Current (Note 1)
50mA
Analog Switches
Commutators
Choppers
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
VGDS = ‐25V
VGSS = ‐25V
LSJ109 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
IDSS
IGSS
IG
ID(off)
rDS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
MIN
‐25
‐2
‐‐
40
‐‐
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
‐‐
‐0.01
‐0.01
0.02
‐‐
MAX
‐‐
‐6
‐‐
‐‐
‐3
‐‐
UNITS
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 10V, ID = 10mA
VDS = 5V, VGS = ‐10V
VGS = 0V, VDS ≤ 0.1V
V
mA
nA
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
3
12
Ω
LSJ109 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
gos
rDS(on)
Ciss
CHARACTERISTIC
MIN
‐‐
TYP.
17
0.6
‐‐
60
11
3.5
MAX
‐‐
‐‐
12
‐‐
UNITS
mS
CONDITIONS
VDS = 5V, ID = 10mA , f = 1kHz
Forward Transconductance
Click To Buy
Output Conductance
Drain to Source On Resistance
Input Capacitance
‐‐
‐‐
‐‐
‐‐
‐‐
Ω
VGS = 0V, ID = 0A, f = 1kHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = ‐10V, f = 1MHz
VDS = 5V, ID = 10mA , f = 1kHz
pF
nV/√Hz
Crss
en
Reverse Transfer Capacitance
Equivalent Noise Voltage
‐‐
‐‐
LSJ109 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
3
VDD = 1.5V
VGS(H) = 0V
Turn On Rise Time
Turn Off Time
1
ns
td(off)
tf
4
See Switching Circuit
Turn Off Fall Time
18
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ109 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
LSJ109 SWITCHING CIRCUIT PARAMETERS
SWITCHING TEST CIRCUIT
VGS(L)
RL
‐7V
Available Packages:
SOT-23 (Top View)
150Ω
10mA
LSJ109 in SOT-23
LSJ109 in bare die.
ID(on)
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
相关型号：
LSJ109-TO-18
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, HERMETIC SEALED PACKAGE-3
Linear
©2020 ICPDF网 联系我们和版权申明