LS5116_SOT-23 [MICROSS]
P-CHANNEL JFET; P沟道JFET
| 型号： | LS5116_SOT-23 |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | P-CHANNEL JFET |
| 文件： | 总1页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS5116
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5116
FEATURES
This analog switch is designed for inverting switching
DIRECT REPLACEMENT FOR SILICONIX 2N5116
LOW ON RESISTANCE
into inverting input of an Operational Amplifier.
rDS(on) ≤ 150Ω
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
6pF
The SOT-23 provides a low cost option and ease of
manufacturing.
Maximum Temperatures
(See Packaging Information).
Storage Temperature
‐55°C to +200°C
‐55°C to +200°C
LS5116 Benefits:
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Low On Resistance
D(off) ≤ 500 pA
Switches directly from TTL logic
I
500mW
LS5116 Applications:
Gate Current (Note 1)
IG = ‐50mA
Analog Switches
Commutators
Choppers
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
VGDS = 30V
VGSS = 30V
LS5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
CHARACTERISTIC
MIN
30
1
‐‐
‐‐
‐‐
‐‐
‐5
‐‐
‐‐
TYP.
‐‐
‐‐
‐0.7
‐1.0
‐0.7
‐0.5
‐‐
5
‐5
‐10
‐10
‐10
‐‐
MAX
‐‐
4
‐1
‐‐
UNITS
V
CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
IG = 1µA, VDS = 0V
VDS = ‐15V, ID = ‐1nA
IG = ‐1mA, VDS = 0V
VGS = 0V, ID = ‐15mA
VDS(on)
Drain to Source On Voltage
‐‐
VGS = 0V, ID = ‐7mA
VGS = 0V, ID = ‐3mA
VDS = ‐15V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = ‐15V, ID = ‐1mA
VDS = ‐15V, VGS = 12V
VDS = ‐15V, VGS = 7V
VDS = ‐15V, VGS = 5V
ID = ‐1mA, VGS = 0V
‐0.6
‐25
500
‐‐
‐‐
‐‐
IDSS
IGSS
IG
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
mA
pA
Gate Operating Current
‐‐
‐‐
‐‐
‐‐
ID(off)
Drain Cutoff Current
‐500
150
rDS(on)
Drain to Source On Resistance
Ω
Click To Buy
LS5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
gos
rDS(on)
Ciss
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
Input Capacitance
MIN
‐‐
‐‐
‐‐
‐‐
TYP.
4.5
20
‐‐
20
5
MAX
‐‐
‐‐
150
25
‐‐
UNITS
mS
µS
CONDITIONS
VDS = ‐15V, ID = 1mA , f = 1kHz
Ω
ID = 0A, VGS = 0V, f = 1kHz
VDS = ‐15V, VGS = 0V, f = 1MHz
VDS = 0V, VGS = 12V, f = 1MHz
VDS = 0V, VGS = 7V, f = 1MHz
VDS = 0V, VGS = 5V, f = 1MHz
VDG = 10V, ID = 10mA , f = 1kHz
pF
‐‐
Crss
Reverse Transfer Capacitance
‐‐
6
‐‐
7
‐‐
6
en
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
LS5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
12
30
10
50
VGS(L) = ‐5V
VGS(H) = 0V
Turn On Rise Time
Turn Off Time
ns
td(off)
tf
See Switching Circuit
Turn Off Fall Time
Note 1 ‐ Absolute maximum ratings are limiting values above which LS5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
LS5116 SWITCHING CIRCUIT PARAMETERS
SWITCHING TEST CIRCUIT
VDD
VGG
RL
‐6V
8V
SOT-23 (Top View)
Available Packages:
LS5116 in SOT-23
LS5116 in bare die.
2kΩ
390Ω
‐3mA
RG
ID(on)
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
相关型号：
©2020 ICPDF网 联系我们和版权申明