LS358_PDIP [MICROSS]
MONOLITHIC DUAL NPN TRANSISTOR; 单片双NPN晶体管
| 型号： | LS358_PDIP |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | MONOLITHIC DUAL NPN TRANSISTOR |
| 文件： | 总1页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS358
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems Log Conformance Monolithic Dual PNP
FEATURES
The LS358 is a monolithic pair of PNP transistors
∆re = 1.5Ω
LOG CONFORMANCE
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and is ideal for use
in logging applications. See LS318 for NPN.
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
‐65°C to +200°C
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
‐55°C to +150°C
(See Packaging Information).
250mW
500mW
2.3mW/°C
4.3mW/°C
LS358 Features:
Tight matching
Low Output Capacitance
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VBE1 – VBE2
∆|(VBE1 – VBE2)| / ∆T
CHARACTERISTIC
Base Emitter Voltage Differential
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
MIN
‐‐
‐‐
TYP
0.4
1
MAX
1
10
UNITS
mV
µV/°C
CONDITIONS
|
IC = 10µA, VCE = 5V
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
|IB1 – IB2
|
‐‐
‐‐
‐‐
‐‐
10
nA
|∆ (IB1 – IB2)|/°C
Base Current Differential
Change with Temperature
DC Current Gain Differential
0.5
nA/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
hFE1 /hFE2
‐‐
5
‐‐
%
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
∆re
BVCBO
BVCEO
BVEBO
BVCCO
CHARACTERISTICS
Log Conformance
Collector to Base Voltage
Collector to Emitter Voltage
Emitter‐Base Breakdown Voltage
Collector to Collector Voltage
MIN.
TYP.
‐‐
MAX.
1.5
‐‐
‐‐
‐‐
‐‐
600
600
‐‐
0.5
0.2
0.2
2
2
0.5
‐‐
UNITS
Ω
V
V
V
V
CONDITIONS
IC = 10‐100‐1000µA, VCE = 5V
‐‐
Click To Buy
20
20
6.2
45
100
100
100
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
IC = 10µA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 1mA, IB = 0.1mA
IC = 0, VEB = 3V
IE = 0, VCB = 15V
IE = 0, VCB = 5V
VCC = 0V
VCC = ±45V
hFE
DC Current Gain
VCE(SAT)
IEBO
ICBO
COBO
CC1C2
IC1C2
fT
Collector Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
V
nA
nA
pF
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
pF
‐‐
200
‐‐
nA
MHz
dB
IC = 1mA, VCE = 5V
IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
NF
3
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS358 in P-DIP
LS358 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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