LS3250A(TO-78) [MICROSS]
Transistor;
| 型号： | LS3250A(TO-78) |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS3250A
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
FEATURES
TIGHT MATCHING
The LS3250A is a monolithic pair of NPN transistors
mounted in a single TO-78 package. The monolithic
dual chip design reduces parasitics and is ideal for use
in tracking applications.
≤ 2mV
≤ 3µV/ °C
THERMAL TRACKING
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
The hermetically sealed TO-78 is well suited for hi-rel
and harsh environment applications.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
‐55°C to +150°C
(See Packaging Information).
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Collector Current
Maximum Voltages
LS3250A Features:
TBD
50mA
80V
Tight matching
Low Output Capacitance
Collector to Collector Voltage
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
|VBE1 – VBE2
CHARACTERISTIC
Base Emitter Voltage Differential
MIN
‐‐
TYP
‐‐
MAX
2
UNITS
mV
CONDITIONS
|
IC = 10mA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
‐‐
‐
3
µV/°C
IC = 10µA, VCE = 5V
TA = ‐40°C to +85°C
IC = 10µA, VCE = 5V
|IB1 – IB2
|
‐‐
‐‐
‐‐
‐‐
10
nA
|∆ (IB1 – IB2)|/ ∆T
Base Current Differential
Change with Temperature
DC Current Gain Differential
0.5
nA/°C
IC = 10µA, VCE = 5V
TA = ‐40°C to +85°C
IC = 10µA, VCE = 5V
hFE1 /hFE2
‐‐
‐‐
10
%
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVCBO
CHARACTERISTICS
MIN.
45
TYP.
‐‐
MAX.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.25
0.2
0.2
2
1
600
3
UNITS
V
V
V
V
CONDITIONS
IC = 10mA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 0
Collector to Base Voltage
Click To Buy
BVCEO
Collector to Emitter Voltage
Emitter‐Base Breakdown Voltage
Collector to Collector Voltage
45
6.2
80
150
120
100
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
2
BVEBO
BVCCO
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 100mA, IB = 10mA
IC = 0A, VCB = 3V
hFE
DC Current Gain
VCE(SAT)
IEBO
ICBO
COBO
IC1C2
fT
Collector Saturation Voltage
Emitter Cutoff Current
Collector Cutoff Current
V
nA
nA
pF
nA
MHz
dB
IE = 0A, VCB = 20V
IE = 0A, VCB = 10V
Output Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
VCC = ±80V
‐‐
‐‐
IC = 1mA, VCE = 5V
IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω,
f = 1KHz
NF
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
TO-78 (Bottom View)
Available Packages:
LS3250A in TO-78
LS3250A available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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