2N4117 [MICROSS]
an Ultra-High Input Impedance N-Channel JFET; 超高输入阻抗N沟道JFET
| 型号： | 2N4117 |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | an Ultra-High Input Impedance N-Channel JFET |
| 文件： | 总1页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4117
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4117
The 2N4117 is an Ultra-High Input Impedance N-Channel JFET
FEATURES
The 2N4117 provides ultra-high input impedance. The
device is specified with a 10-pA limit and is ideal for use
as a high-impedance sensitive front-end amplifier.
DIRECT REPLACEMENT FOR SILICONIX 2N4117
LOW POWER
IDSS<90 µA
IGSS<10 pA
MINIMUM CIRCUIT LOADING
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
2N4117 Benefits:
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source (Note 2)
Low Power Consumption (Battery)
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
‐65°C to +175°C
‐55°C to +150°C
2N4117 Applications:
300mW
50mA
‐40V
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
2N4117 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
IDSS
CHARACTERISTIC
MIN
‐40
‐0.6
0.03
‐‐
‐‐
70
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
‐1.8
0.09
‐10
‐25
210
3
UNITS
V
V
mA
pA
CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current
IG = ‐1µA, VDS = 0V
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VGS = ‐20V, VDS = 0V
IGSS
Click To Buy
VGS = ‐20V, VDS = 0V, 150°C
VDS = 10V, VGS = 0V, f = 1kHz
gfs
gos
Ciss
Crss
Forward Transconductance(Note 3)
Output Conductance
µmho
pF
Input Capacitance
‐‐
‐‐
3
1.5
VDS = 10V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance
1 . Absolute maximum ratings are limiting values above which 2N4117 serviceability may be impaired.
2. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged
3. This parameter is measured during a 2ms interval 100ms after power is applied. (Not a JEDEC condition.)
NOTES
Micross Components Europe
Available Packages:
TO-71 (Bottom View)
2N4117 in TO-71
2N4117 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
相关型号：
2N4117A-2-E3
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AF,
VISHAY
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