UPS120EE3/TR7 [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1;
UPS120EE3/TR7
型号: UPS120EE3/TR7
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1

二极管
文件: 总4页 (文件大小:418K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UPS120Ee3  
Low Leakage Schottky Barrier Rectifier  
Main product characteristics  
IO  
1A  
VRRM  
20V  
Tj(MAX)  
VF(MAX)  
IR(MAX)  
125ºC  
0.455V  
10µA  
Features and benefits  
Low forward voltage drop  
Low profile package height  
Powermite 1  
(DO-216AA)  
Efficient heat path with integral locking bottom metal tab  
Low thermal resistance DO-216AA package  
Description and applications  
Single schottky rectifier assembled in Powermite 1® package which features a full metallic bottom that  
eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique  
locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with  
very low thermal resistance junction to case (bottom).  
This product is suitable for use in switching and regulating power supplies and also charge pump  
circuits.  
Absolute maximum ratings(1)  
Symbol  
Parameter  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
20  
V
VR(RMS)  
RMS Reverse Voltage  
14  
V
A
Average rectified forward output current  
(TC = 135ºC)  
IO  
1.0  
Peak repetitive forward current  
(100kHz square wave, TC = 135ºC)  
Non repetitive peak forward surge current  
(8.3ms single half sine wave)  
IFRM  
IFSM  
2.0  
50  
A
A
dV/dt  
TSTG  
TJ  
Voltage rate of change (at max VR)  
Storage temperature  
10000  
V/µs  
ºC  
-55 to +150  
-55 to +125  
Junction temperature  
ºC  
(1) All ratings at 25ºC unless specified otherwise  
Copyright © 2008  
June 2008 Rev E  
1/4  
www.Microsemi.com  
UPS120Ee3  
Low Leakage Schottky Barrier Rectifier  
Characteristics  
Static Electrical Characteristics  
Symbol  
Parameter  
Test Conditions  
IF = 0.1 A  
Typ  
max  
Units  
0.455  
0.530  
0.595  
0.360  
0.455  
0.540  
10  
1.0  
0.5  
1600  
500  
300  
TJ = 25ºC  
TJ = 100ºC  
TJ = 25ºC  
TJ = 100ºC  
IF = 1.0 A  
IF = 3.0 A  
IF = 0.1 A  
IF = 1.0 A  
IF = 3.0 A  
VR = 20V  
VR = 10V  
VR = 5V  
(2)  
VF  
Maximum forward voltage  
V
Maximum instantaneous  
reverse current  
(2)  
IR  
µA  
pF  
VR = 20V  
VR = 10V  
VR = 5V  
CT  
Junction capacitance  
VR = 5V, f = 1MHz  
(2) Measured with a test pulse of 380µs to minimize self-heating effect  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Unit  
RΘJC  
RΘJA  
Junction to case (bottom)  
Junction to ambient(3)  
15  
ºC/W  
ºC/W  
240  
(3) Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print  
Reverse power dissipation and the possibility of thermal runaway  
must be considered when operating this device under any  
reverse voltage conditions. Calculations of TJ therefore must  
include forward and reverse power effects. The allowable  
operating TJ may be calculated from the equation:  
TJ = TJ max = r(t)(Pf+Pr) where  
r(t) = thermal impedance under given conditions.  
Pf = forward power dissipation, and  
Pr = reverse power dissipation  
This graph displays the de-rated allowable TJ due to reverse bias  
under DC conditions only and is calculated as TJ = TJ max-r(t) Pr,  
Where r(t)=Rthja. For other power applications further  
calculations must be performed.  
Copyright © 2008  
June 2008 Rev E  
2/4  
www.Microsemi.com  
UPS120Ee3  
Low Leakage Schottky Barrier Rectifier  
Thermal Impedance Junction to Case (bottom)  
Thermal Impedance Junction to Ambient  
Mechanical Characteristics  
Physical dimensions  
Dimensions  
Millimeters Inches  
Min.  
Ref.  
Min.  
0.73  
0.40  
1.77  
2.21  
0.50  
1.29  
0.53  
0.10  
1.77  
0.89  
Max.  
0.99  
0.66  
2.03  
2.46  
0.76  
1.54  
0.78  
0.20  
2.03  
1.14  
Max.  
0.039  
0.026  
0.080  
0.097  
0.030  
0.061  
0.031  
0.008  
0.080  
0.045  
A
B
C
D
E
F
G
H
I
0.029  
0.016  
0.070  
0.087  
0.020  
0.051  
0.021  
0.004  
0.070  
0.035  
J
Copyright © 2008  
June 2008 Rev E  
3/4  
www.Microsemi.com  
UPS120Ee3  
Low Leakage Schottky Barrier Rectifier  
Footprint dimensions  
Package materials & information  
Case : Epoxy meets UL94V-0  
Electrode finish : Matte Sn  
plating - fully RoHS compliant  
Marking code :  
20E  
Powermite 1® footprint dimensions in mm (inches)  
Ordering information  
Product order code  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
Powermite 1  
(DO-216AA)  
UPS120Ee3 / TR7  
20E  
0.016 g  
3000  
Tape and reel (7 inch)  
Powermite 1  
(DO-216AA)  
UPS120Ee3 / TR13  
20E  
0.016 g  
12000  
Tape and reel (13 inch)  
Commercial Business Unit  
Microsemi Corporation  
Microsemi Commercial Offshore de Macau Limitada  
Avenida Doutor Mario Soares  
Bank of China Building, 18/F, Unit D  
Macau SAR  
Please refer to www.microsemi.com for the terms and conditions of purchase  
Copyright © 2008  
June 2008 Rev E  
4/4  
www.Microsemi.com  

相关型号:

UPS120TR13E3

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1
MICROSEMI

UPS120TR7E3

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-1
MICROSEMI

UPS12240

specially designed for high efficient discharge application
CSB-BATTERY

UPS122406

Its characteristics are high energy density, small footprint and high discharge efficiency.
CSB-BATTERY

UPS122406_16

Cells per unit 6 Voltage per unit 12
CSB-BATTERY

UPS122406_17

Valve Regulated Lead Acid Battery
CSB-BATTERY

UPS123606

specially designed for high efficient discharge application
CSB-BATTERY

UPS123606_12

Its characteristics are high energy density, small footprint and high discharge efficiency.
CSB-BATTERY

UPS123606_16

Cells per unit 6 Voltage per unit 12
CSB-BATTERY

UPS123606_17

Valve Regulated Lead Acid Battery
CSB-BATTERY

UPS123607

specially designed for high efficient discharge application
CSB-BATTERY

UPS123607_12

Its characteristics are high energy density, small footprint and high discharge efficiency.
CSB-BATTERY