UFT20120A [MICROSEMI]
Rectifier Diode, 1 Phase, 2 Element, 100A, 200V V(RRM), Silicon, PACKAGE-2;
| 型号： | UFT20120A |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 100A, 200V V(RRM), Silicon, PACKAGE-2 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总40页 (文件大小：3853K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Products
Microsemi Power Portfolio 2018
Power Semiconductors
Power Modules
RF Power MOSFETs
Contents
High-Voltage SMPS Transistors
Insulated Gate Bipolar Transistors (IGBTs)....................................................................................................... 3
Silicon Carbide (SiC) MOSFETs....................................................................................................................... 7
Power MOS 8™ MOSFETs/FREDFETs............................................................................................................. 8
Ultra-Fast, Low Gate Charge MOSFETs ....................................................................................................... 10
Super Junction MOSFETs............................................................................................................................. 11
Linear MOSFETs........................................................................................................................................... 11
Diodes
SiC Schottky Barrier Diodes ......................................................................................................................... 12
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes ................................................................ 12
High-Voltage RF MOSFETs.................................................................................................................................. 15
High-Frequency RF MOSFETs............................................................................................................................. 15
Drivers and Driver-RF MOSFET Hybrids .............................................................................................................. 16
Reference Design Kits ......................................................................................................................................... 16
Power Modules
Power Modules Contents ............................................................................................................................. 17
Standard Electrical Configurations................................................................................................................ 18
Packaging .................................................................................................................................................... 19
Custom Power Modules............................................................................................................................... 20
Rugged Custom Power Modules.................................................................................................................. 21
Power Module Part Numbering System........................................................................................................ 22
IGBT Power Modules ................................................................................................................................... 23
Intelligent Power Modules............................................................................................................................. 26
MOSFET Power Modules ............................................................................................................................. 27
Renewable Energy Power Modules .............................................................................................................. 31
Power Modules with SiC Schottky Diodes.................................................................................................... 33
SiC MOSFET Power Modules....................................................................................................................... 35
Diode Power Modules .................................................................................................................................. 36
Package Outlines ................................................................................................................................................ 37
Power Module Outlines ....................................................................................................................................... 38
ASPM®, Power MOS 7®, and T MAX® are registered trademarks of Microsemi Corporation.
2
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high-quality solutions for a wide range of high-voltage, high-power applications. The switching
frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density switch mode power supply
(SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents
the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six
product series that utilize three different IGBT technologies: non-punch-through (NPT), punch-through (PT), and field stop.
IGBT Switching Frequency Ranges (kHz, Hard Switched)
0
20
40
60
80
100
120
140
160
Field Stop
600 V
Power MOS 8™ PT
650 V
900 V
Power MOS 8™ NPT (NEW!)
Power MOS 8™ PT
Field Stop
Power MOS 7™ PT
1200 V
Power MOS 8™ NPT
Note: Frequency ranges shown are typical for a 50 A IGBT. Refer to product datasheet maximum frequency versus current graph for more information.
Short Circuit Safe
Operating Area (SOA)
Standard Series
Voltage Ratings (V)
Technology
Easy to Parallel
Parameter
MOS 7™
MOS 8™
1200
PT
Ultra-low gate charge
Highest efficiency
600, 650, 900, 1200
600, 1200
PT, NPT
Field Stop
Field Stop Trench Gate
•
•
Lowest conduction loss
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
Package options include TO-220, TO-247, T-MAX®, TO-264, and SOT-227. Customized products are available; contact the factory
for details.
3
IGBTs—Punch-Thru
VCE(ON) (V) IC2 (A) Maximum IC (A)
Typ 25 °C 100 °C at Frequency
Part
Number
Package
Style
V(BR)CES (V)
POWER MOS 7™
Single
20 kHz 40 kHz
3.3
3.3
3.3
3.3
3.3
3.3
33
46
54
34
91
57
19
24
29
28
42
40
12
15
18
18
24
23
APT25GP120BG
APT35GP120BG
APT45GP120BG
APT45GP120J
TO-247
TO-247
TO-247
ISOTOP
T-MAX®
ISOTOP
• Ultra-low gate charge
TO-247[B]
• Combi with high-speed
DQ diode
1200
APT75GP120B2G
APT75GP120J
Combi (IGBT
& "DQ" FRED)
20 kHz 40 kHz
3.3
3.3
3.3
3.3
3.3
33
46
54
34
57
19
24
29
28
40
12
15
18
18
23
APT25GP120BDQ1G
APT35GP120B2DQ2G
APT45GP120B2DQ2G
APT45GP120JDQ2
APT75GP120JDQ3
TO-247
T-MAX®
T-MAX®
ISOTOP
ISOTOP
D3PAK[S]
1200
POWER MOS 8™
Single
50 kHz 80 kHz
2
2
2
2
2
2
36
44
21
26
30
35
40
51
17
20
23
27
31
39
APT36GA60B
APT44GA60B
APT54GA60B
APT68GA60B
APT80GA60B
APT102GA60B2
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
T-MAX® or TO-264
• Fast switching
• Highest efficiency
T-MAX®[B2]
54
• Combi with high-speed
DQ diode
600
68
80
102
25 kHz 50 kHz
2.5
2.5
2.5
2.5
35
43
64
80
17
21
29
34
10
13
19
23
APT35GA90B
APT43GA90B
APT64GA90B
APT80GA90B
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
900
Combi (IGBT
& "DQ" FRED)
TO-264[L]
50 kHz 80 kHz
2
2
2
2
2
2
36
44
54
60
68
80
21
26
30
48
35
40
17
20
23
36
27
31
APT36GA60BD15
APT44GA60BD30
APT54GA60BD30
APT60GA60JD60
APT68GA60B2D40
APT80GA60LD40
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
ISOTOP®
600
T-MAX® or TO-264
TO-264
25 kHz 50 kHz
ISOTOP®[J]
SOT-227
2.5
2.5
2.5
2.5
2.5
2.5
27
35
43
46
64
80
14
17
21
33
29
34
8
APT27GA90BD15
APT35GA90BD15
APT43GA90BD30
APT46GA90JD40
APT64GA90B2D30
APT80GA90LD40
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
ISOTOP®
10
13
21
19
23
900
C
T-MAX® or TO-264
G
TO-264
E
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: Tj = 125 °C, Tc = 100 °C except Isotop® where Tc = 80 °C, Vcc = 67% rated voltage hard switch.
Datasheets available on www.microsemi.com
All products RoHS-compliant
4
IGBTs—Non-Punch-Thru
VCE(ON) (V) IC2 (A)
Typ 25 °C 100 °C
Maximum IC (A)
at Frequency
Part
Number
Package
Style
V(BR)CES (V)
Single
POWER MOS 8™
150 kHz 200 kHz
1.9
1.9
1.9
45
70
95
31
100 kHz 150 kHz
52 39
50 kHz 100 kHz
69 41
50 kHz 80 kHz
25
APT45GR65B
APT70GR65B
APT95GR65B2
TO-247
TO-247
T-MAX®
• High-speed switching
• Low switching losses
• Easy to parallel
TO-247[B]
650
2.5
2.5
2.5
2.5
2.5
2.5
25
25
40
40
50
50
25
25
38
38
48
48
21
21
28
28
36
36
APT25GR120B
APT25GR120S
APT40GR120B
APT40GR120S
APT50GR120B2
APT50GR120L
TO-247
D3PAK
TO-247
D3PAK
T-MAX®
TO-264
D3PAK[S]
1200
25 kHz 50 kHz
2.5
2.5
2.5
2.5
2.5
2.5
70
70
66
66
42
72
72
46
42
42
30
46
46
31
APT70GR120B2
APT70GR120L
APT70GR120J
APT85GR120B2
APT85GR120L
APT85GR120J
T-MAX®
TO-264
ISOTOP®
T-MAX®
TO-264
ISOTOP®
T-MAX®[B2]
70*
85
85
85*
Combi
(IGBT & Diode)
150 kHz 200 kHz
31 25
100 kHz 150 kHz
52 39
50 kHz 80 kHz
1.9
1.9
45
70
APT45GR65BSCD10 TO-247 (SiC SBD)
APT70GR65B2SCD30 T-MAX® (SiC SBD)
650
TO-264[L]
2.5
2.5
2.5
2.5
2.5
2.5
25
25
25
25
40
40
25
25
25
25
38
38
21
21
21
21
28
28
APT25GR120BD15
APT25GR120SD15
TO-247 (DQ)
D3PAK (DQ)
APT25GR120BSCD10 TO-247 (SiC SBD)
APT25GR120SSCD10 D3PAK (SiC SBD)
1200
APT40GR120B2D30
APT40GR120B2SCD10 T-MAX® (SiC SBD)
T-MAX® (DQ)
25 kHz 50 kHz
ISOTOP®[J]
SOT-227
2.5
2.5
2.5
50*
70*
85*
42
42
46
32
30
31
APT50GR120JD30
APT70GR120JD60
APT85GR120JD60
ISOTOP® (DQ)
ISOTOP® (DQ)
ISOTOP® (DQ)
C
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
G
E
Current at frequency test conditions: Tj = 125 °C, Tc = 100 °C except Isotop® where Tc = 80 °C, Vcc = 67% rated voltage hard switch.
Datasheets available on www.microsemi.com
All products RoHS-compliant
5
IGBTs—Field Stop
VCE(ON) (V) IC2 (A) Maximum IC (A)
Part
Number
Package
Style
V(BR)CES (V)
Single
Typ 25 °C 100 °C
at Frequency
Field Stop
15 kHz 30 kHz
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
24
37
15
20
10
14
21
30
47
39
57
75
66
APT20GN60BG
APT30GN60BG
APT50GN60BG
APT75GN60BG
APT150GN60J
TO-247
TO-247
TO-247
TO-247
ISOTOP®
T-MAX®
T-MAX®
T-MAX®
ISOTOP®
• Trench technology
• Short circuit rated
• Lowest conduction loss
• Easy paralleling
TO-247[B]
D3PAK[S]
64
30
93
42
600
123
135
190
230
158
75
• Combi with high-speed
DQ diode
54
APT100GN60B2G
APT150GN60B2G
APT200GN60B2G
APT200GN60J
79
103
100
10 kHz 20 kHz
1.7
1.7
1.7
1.7
1.7
1.7
1.7
33
46
19
24
32
44
45
58
60
13
17
22
27
30
38
36
APT25GN120BG
APT35GN120BG
APT50GN120B2G
APT100GN120J
APT75GN120B2G
APT100GN120B2G
APT150GN120J
TO-247 or D3PAK
TO-247
T-MAX®
ISOTOP®
T-MAX® or TO-264
T-MAX®
T-MAX®[B2]
66
1200
70
99
120
99
ISOTOP®
Combi (IGBT
& "DQ" FRED)
15 kHz 30 kHz
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
24
37
15
20
30
42
75
54
79
100
10
14
21
30
47
39
57
66
APT20GN60BDQ1G
APT30GN60BDQ2G
APT50GN60BDQ2G
APT75GN60LDQ3G
APT150GN60JDQ4
APT100GN60LDQ4G
APT150GN60LDQ4G
APT200GN60JDQ4
TO-247
TO-247
TO-247
TO-264
ISOTOP®
TO-264v
TO-264
ISOTOP®
TO-264[L]
64
93
600
123
135
190
158
10 kHz 20 kHz
264-MAX™[L2]
1.7
1.7
1.7
1.7
1.7
1.7
1.7
22
33
46
57
66
70
99
14
19
24
36
32
44
60
10
13
17
22
22
27
36
APT15GN120BDQ1G TO-247 or D3PAK
APT25GN120B2DQ2G
APT35GN120L2DQ2G
APT75GN120JDQ3
T-MAX®
264-MAX™
ISOTOP®
264-MAX™
ISOTOP®
ISOTOP®
1200
APT50GN120L2DQ2G
APT100GN120JDQ4
APT150GN120JDQ4
ISOTOP®[J]
SOT-227
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
C
G
E
Current at frequency test conditions: Tj = 125 °C, Tc = 100 °C except Isotop® where Tc = 80 °C, Vcc = 67% rated voltage hard switch.
Datasheets available on www.microsemi.com
All products RoHS-compliant
6
Silicon Carbide (SiC) MOSFETs
Silicon Carbide (SiC) MOSFETs
Silicon Carbide (SiC) is the ideal technology for higher switching
frequency, higher efficiency, and higher power (>650 V)
applications. Target markets and applications include:
• Smart energy: photovoltaic (PV) inverter, wind turbine
• Medical: MRI power supply, X-Ray power supply
• Defense and oil drilling: Motor drives, auxiliary power supplies
• Commercial aviation: Actuation, air conditioning,
power distribution
• Industrial: Motor drives, welding, uniterruptible power supply
(UPS), SMPS, induction heating
SiC MOSFET and SiC Schottky barrier diode product lines from
Microsemi increase your system efficiency over silicon MOSFET
and IGBT solutions while lowering your total cost of ownership
by enabling downsized systems and smaller/lower cost cooling.
• Transportation/automotive: Electric vehicle (EV) battery
charger, hybrid electric vehicle (HEV) powertrain, DC–DC
converter, energy recovery
Part Number
Voltage (V)
RDS(ON) (Typical)
Package
MSC090SMA070B
MSC090SMA070S
MSC060SMA070B
MSC060SMA070S
MSC035SMA070B
MSC035SMA070S
MSC015SMA070B
MSC015SMA070S
MSC280SMA120B
MSC280SMA120S
MSC140SMA120B
MSC140SMA120S
MSC080SMA120B
MSC080SMA120S
MSC080SMA120J
MSC040SMA120B
MSC040SMA120S
MSC040SMA120J
MSC025SMA120B
MSC025SMA120S
MSC025SMA120J
MSC750SMA170B
MSC750SMA170S
MSC045SMA170B
MSC045SMA170S
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
TO-247
D3PAK
SOT-227
TO-247
D3PAK
SOT-227
TO-247
D3PAK
SOT-227
TO-247
D3PAK
TO-247
D3PAK
90 mΩ
60 mΩ
35 mΩ
15 mΩ
280 mΩ
140 mΩ
700
TO-247
80 mΩ
40 mΩ
25 mΩ
TO-268
D3PAK
1200
750 mΩ
45 mΩ
1700
SiC MOSFET Features and Benefits
Characteristics
Results
Lower on-resistance
Faster switching
Higher junction temperature
Higher power density
Self regulation
Benefits
Higher efficiency
Size reduction
Improved cooling
Higher current capabilities
Easy paralleling
Breakdown field (MV/cm)
Electron sat. velocity (cm/s)
Bandgap energy (ev)
Thermal conductivity (W/m.K)
Positive temperature coefficient
Microsemi Advantages Versus Competition
• Lowest conduction losses at high temperature
• Low switching losses
• High short circuit withstand rating
• Low gate resistance
• Patented SiC technology
• SiC is the perfect technology to address high-frequency
and high-power-density applications
• Lower power losses
• High avalanche rating: UIS and Repetitive UIS
• Easier cooling, downsized system, and higher reliability
7
Power MOS 8™ MOSFETs/FREDFETs
RDS(ON)
Max (Ω)
MOSFET
Part Number
FREDFET
Part Number
Package
Style
BVDSS (V)
ID (A)
ID (A)
2.40
2.10
1.20
1.10
0.70
0.63
0.58
0.58
0.53
0.53
0.32
0.29
2.00
1.80
1.60
1.40
0.98
0.88
0.78
0.70
0.44
0.44
0.38
0.38
0.33
0.33
0.20
0.18
0.90
0.80
0.58
0.53
0.43
0.39
0.24
0.21
0.21
0.19
0.19
0.11
0.10
7
APT7F120B
APT13F120B
APT22F120B2
TO-247 or D3PAK
TO-247
8
APT7M120B
APT14M120B
APT24M120B2
14
23
TO-247 or D3PAK
TO-247
T-MAX® or TO-264
T-MAX® or TO-264
T-MAX® or TO-264
ISOTOP®
TO-247[B]
14
24
1200
27
18
APT26F120B2
APT17F120J
29
19
APT28M120B2
APT19M120J
T-MAX® or TO-264
ISOTOP®
D3PAK[S]
33
7
APT32F120J
APT7F100B
APT9F100B
APT14F100B
APT17F100B
ISOTOP®
ISOTOP®
35
8
APT34M120J
APT8M100B
APT9M100B
APT14M100B
APT18M100B
TO-247
TO-247
9
TO-247 or D3PAK
TO-247
9
14
17
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
14
18
T-MAX®[B2]
1000
30
20
35
23
APT29F100B2
APT19F100J
APT34F100B2
APT22F100J
32
21
37
25
APT31M100B2
APT21M100J
APT37M100B2
APT25M100J
42
12
18
23
APT41F100J
APT11F80B
APT17F80B
APT22F80B
ISOTOP®
ISOTOP®
45
13
19
25
43
APT45M100J
APT12M80B
APT18M80B
APT24M80B
APT41M80B2
TO-247 or D3PAK
TO-247
TO-264[L]
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
T-MAX® or TO-264
T-MAX® or TO-264
ISOTOP®
800
41
47
31
APT38F80B2
APT44F80B2
APT29F80J
49
33
APT48M80B2
APT32M80J
T-MAX® or TO-264
ISOTOP®
ISOTOP®[J]
SOT-227
(Isolated Base)
57
APT53F80J
ISOTOP®
ISOTOP®
60
APT58M80J
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Datasheets available on www.microsemi.com
All products RoHS-compliant
8
Power MOS 8™ MOSFETs/FREDFETs (continued)
RDS(ON)
Max (Ω)
MOSFET
Part Number
FREDFET
Part Number
Package
Style
BVDSS (V)
ID (A)
ID (A)
0.37
0.29
0.19
0.15
0.15
0.11
0.11
0.09
0.09
0.055
0.24
0.19
0.15
0.13
0.10
0.10
0.075
0.075
0.062
0.062
0.036
19
24
36
45
31
60
42
70
49
84
24
30
37
43
56
38
75
51
84
58
103
APT18F60B
APT23F60B
APT34F60B
APT43F60B2
APT30F60J
APT56F60B2
APT39F60J
APT66F60B2
APT47F60J
APT80F60J
APT24F50B
APT30F50B
APT37F50B
APT42F50B
APT56F50B2
APT38F50J
APT75F50B2
APT51F50J
APT84F50B2
APT58F50J
APT100F50J
TO-247 or D3PAK
TO-247 or D3PAK
TO-247
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
36
45
31
60
42
70
49
84
APT34M60B
APT43M60B2
APT30M60J
APT56M60B2
APT39M60J
APT66M60B2
APT47M60J
APT80M60J
TO-247[B]
600
ISOTOP®
D3PAK[S]
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
56
38
APT56M50B2
APT38M50J
APT75M50B2
APT51M50J
APT84M50B2
APT58M50J
APT100M50J
500
75
51
84
T-MAX®[B2]
58
103
ISOTOP®
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Low-Voltage Power MOS V® MOSFETs/FREDFETs
TO-264[L]
RDS(ON)
MOSFET
FREDFET
Part Number
Package
Style
BVDSS (V)
ID (A)
ID (A)
Max (Ω)
Part Number
0.085
0.070
0.040
0.019
0.045
0.038
0.022
0.011
40
48
APT30M85BVRG
APT30M70BVRG
APT30M40JVR
TO-247
TO-247 or D3PAK
ISOTOP®
48
70
APT30M70BVFRG
APT30M40JVFR
APT30M19JVFR
APT20M45BVFRG
300
70
130
56
APT30M19JVR
130
56
ISOTOP®
APT20M45BVRG
APT20M38BVRG
APT20M22B2VRG
APT20M11JVR
TO-247
67
TO-247 or D3PAK
T-MAX® or TO-264
ISOTOP®
200
ISOTOP®[J]
SOT-227
(Isolated Base)
100
175
175
APT20M11JVFR
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Datasheets available on www.microsemi.com
All products RoHS-compliant
9
Ultra-Fast, Low Gate Charge MOSFETs
For 250 kHz–2 MHz Switching Applications
The ultra-fast, low gate charge MOSFET family combines the lowest gate charge available in the industry with Microsemi’s
proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and
very low switching losses. The metal gate structure and the layout of these chips provide an internal series gate resistance (EGR)
an order of magnitude lower than competitive devices built with a polysilicon gate.
These devices are ideally suited for high-frequency and pulsed high-voltage applications.
Typical Applications
Features
• Class D amplifiers up to 2 MHz
• Series gate resistance (RG) <0.1 Ω
• High-voltage pulsed DC
• AM transmitters
• TR and TF times of <10 ns
• Industry’s lowest gate charge
• Plasma deposition/etch
Benefits
• Fast switching, uniform signal propagation
• Pulse power applications
• Fast switching, reduced gate drive power
BVDSS
(V)
RDS(ON)
Max (Ω)
MOSFET
Part Number
FREDFET
Part Number
Package
Style
ID (A)
4.700
1.400
0.570
0.900
0.780
0.450
0.450
0.350
0.350
0.260
0.260
0.210
0.140
0.110
0.200
0.200
0.140
0.100
0.065
0.065
0.075
0.075
0.050
0.038
3.5
9
APT1204R7BFLLG
APT1201R4BFLLG
TO-247 or D3PAK
TO-247
1200
22
12
14
23
21
28
25
38
30
37
52
51
38
33
35
46
67
58
51
57
71
88
APT12057B2LLG
APT10090BLLG
APT10078BLLG
APT10045B2LLG
APT10045JLL
T-MAX®
TO-247[B]
TO-247
TO-247 or D3PAK
T-MAX® or TO-264
ISOTOP®
1000
APT10035B2LLG
APT10035JLL
T-MAX®
ISOTOP®
APT10026L2FLLG
APT10026JFLL
APT10021JFLL
APT8014L2FLLG
APT8011JFLL
TO-264 MAX
ISOTOP®
ISOTOP®
APT10026JLL
APT10021JLL
APT8014L2LLG
APT8011JLL
T-MAX®[B2]
TO-264 MAX
T-MAX® or TO-264
T-MAX®
800
500
APT8020B2LL
APT8020JLL
ISOTOP® or D3PAK
APT5014BLLG
APT5010B2LLG
APT50M65B2LLG
APT50M65JLL
APT50M75JLL
APT50M75B2LLG
APT50M50JLL
APT50M38JLL
TO-247
APT5010B2FLLG
APT50M65B2FLLG
APT50M65JFLL
APT50M75JFLL
T-MAX® or TO-264
T-MAX® or TO-264
ISOTOP®
ISOTOP®
T-MAX® or TO-264
ISOTOP®
ISOTOP®[J]
SOT-227
(Isolated Base)
ISOTOP®
Datasheets available on www.microsemi.com
All products RoHS-compliant
10
Super Junction MOSFETs
BVDSS
(V)
RDS(ON)
(Ω)
ID(Cont)
(A)
Part
Number
Package
Style
C3 Technology
APT36N90BC3G
APT11N80BC3G
APT34N80B2C3G
APT34N80LC3G
APT94N65B2C3G
APT47N65BC3G
APT47N60BC3G
APT77N60JC3
900
800
0.120
0.450
0.145
0.145
0.035
0.070
0.070
0.035
0.042
36
11
34
34
94
47
47
77
94
TO-247
TO-247
T-MAX® or TO-264
TO-264
TO-247[B]
T-MAX®[B2]
T-MAX® or TO-264
TO-247 or D3PAK
TO-247 or D3PAK
ISOTOP®
650
600
D3PAK[S]
TO-268
APT94N60L2C3G
Server Series
264-MAX™
0.045
60
APT60N60BCSG
C6 Technology
APT77N60BC6
APT53N60BC6
APT38N60BC6
APT30N60BC6
APT106N60B2C6
APT97N65B2C6
APT94N65B2C6
TO-247 or D3PAK
TO-264[L]
264-MAX™[L2]
0.041
0.070
0.099
0.125
0.035
0.041
0.035
77
53
38
30
106
85
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
TO-247 or D3PAK
T-MAX™ or TO-264
T-MAX™ or TO-264
T-MAX™
600
ISOTOP®[J]
SOT-227
650
94
(Isolated Base)
Part numbers for D3PAK packages—replace “B” with “S” in part number.
Linear MOSFETs
What is a Linear MOSFET?
These linear MOSFETs typically provide 1.5–2.0 times
the DC SOA capability at high voltage compared to other
MOSFET technologies optimized for switching applications.
A MOSFET specifically designed to be more robust than
a standard MOSFET when operated with both high voltage
and high current near DC conditions (>100 msecs).
Designers Will Need Linear MOSFETs
in the Following Situations
The Problem with SMPS MOSFETs
• High current and less than 200 volts
at less than 100 milliseconds
MOSFETs optimized for high-frequency SMPS applications
have poor high voltage DC SOA. Most SMPS-type MOSFETs
over state SOA capability at high voltage on the datasheets.
Above ~30 V and DC conditions, SOA drops faster than
is indicated by power disipation (PD) limited operation.
For pulsed loads (t < 10 ms), there is generally no problem
using a standard MOSFET.
• Used as a variable power resistor
• Soft start application (limit surge currents)
• Linear amplifier circuit
Typical Applications
Technology Innovation
• Active loads above 200 volts, such as DC dynamic loads
for testing power supplies, batteries, fuel cells, and so on.
Introduced in 1999, Microsemi modified its proprietary
patented self-aligned metal gate MOSFET technology for
enhanced performance in high voltage, linear applications.
• High voltage, high current, constant current sources.
Part
Number
APL602B2G
APL602J
APL502B2G
BVDSS (V)
600
RDS(ON) (Ω)
ID(Cont) (A)
SOA (W)
0.125
0.125
0.090
0.090
49
43
58
52
325
325
325
325
500
ISOTOP®[J]
APL502J
SOT-227
(Isolated Base)
Part numbers for TO-264 packages—replace “B2” with “L” in part number.
T-MAX®[B2]
TO-264[L]
Datasheets available on www.microsemi.com
All products RoHS-compliant
11
SiC Schottky Barrier Diodes
VF (V)
(Typical at 25 °C)
Part Number
Voltage (V)
IF (A)
Package
MSC010SDA070K
MSC030SDA070K
MSC050SDA070B
MSC010SDA120B
MSC010SDA120K
MSC015SDA120B
MSC030SDA120B
MSC030SDA120S
MSC050SDA120B
MSC050SDA120S
MSC010SDA170B
MSC030SDA170B
MSC050SDA170B
10
30
50
10
10
15
30
30
50
50
10
30
50
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
TO-220
TO-220
TO-247
TO-247
TO-220
TO-247
TO-247
D3PAK
TO-247
D3PAK
TO-247
TO-247
TO-247
700
TO-220[K]
1200
1700
TO-247[B]
D3PAK[S]
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes
Microsemi offers four series of discrete diode products: the
medium-speed medium VF D series, the high-speed DQ
series, the silicon Schottky S series, and the SiC Schottky
MSCxxxSDxxxx series. These series of diodes are designed
to provide high-quality solutions to a wide range of high-
voltage, high-power application requirements, ranging from
fast recovery for continuous conduction mode power factor
correction to low conduction loss for output rectification. The
following table summarizes each product family’s distinguishing
features and potential applications.
The following graph shows the relative recovery speed and
forward voltage positions of 600 V, D, and DQ, series diodes.
600 V, 30 A Diode Recovery Charge vs. VF
IF=30 A, VDD=400 V, diF/dt=–200 A/ms, TJ=125 ºC
1000
800
D
600
400
200
0
DQ
SiC
1.0
1.5
2.0
2.5
Forward Voltage (V)
Series
Voltage Ratings
Features
Applications
Comment
Freewheeling diode
Output rectifier
DC–DC converter
200, 300, 400,
600, 1000, 1200
Medium VF
Medium speed
D
Proprietary platinum process
PFC
High speed
Avalanche rated
Stepped EPI improves softness
Proprietary platinum process
DQ
600, 1000, 1200
200
Freewheeling diode
DC–DC converter
Output rectifier
Freewheeling diode
DC–DC converter
Low VF
Avalanche rated
Schottky
PFC
Low switching losses, high power density,
and high-temperature operation
SiC Schottky
700, 1200, 1700
Zero reverse recovery
Freewheeling diode
DC–DC converter
12
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes
Volts Typ
25 °C
t(ns) Typ
25 °C
Q(nC) RR Typ
125 °C at IF = IF (avg)
Diode
Series
Part
Number
Volts
I (A)
Package
Single
960
15
15
15
15
30
30
30
40
60
60
75
15
15
15
30
30
30
40
60
60
75
15
15
15
15
30
30
30
40
60
60
75
30
60
30
30
60
60
100
2.8
2.8
2.0
2.0
2.8
2.8
2.0
2.8
2.8
2.0
2.8
2.5
2.5
1.9
2.5
2.5
1.9
2.5
2.5
1.9
2.5
2.0
2.0
1.6
1.6
2.0
2.0
1.6
2.0
2.0
1.6
2.0
1.3
1.3
1.1
0.83
1.1
0.83
0.89
21
21
32
32
24
24
31
26
30
38
32
20
20
28
22
22
29
24
29
34
33
16
16
21
21
19
19
23
22
26
40
29
22
30
21
25
30
35
40
DQ
DQ
D
APT15DQ120BG
APT15DQ120KG
APT15D120BG
APT15D120KG
APT30DQ120BG
APT30DQ120KG
APT30D120BG
APT40DQ120BG
APT60DQ120BG
APT60D120BG
APT75DQ120BG
APT15DQ100BG
APT15DQ100KG
APT15D100KG
APT30DQ100BG
APT30DQ100KG
APT30D100BG
APT40DQ100BG
APT60DQ100BG
APT60D100BG
APT75DQ100BG
APT15DQ60BG
APT15DQ60KG
APT15D60BG
TO-247
TO-220
960
1300
1300
1800
1800
3450
2200
2800
4000
3340
810
TO-247
D
TO-220
TO-220[K]
DQ
DQ
D
TO-247
1200
TO-220
TO-247
DQ
DQ
D
TO-247
TO-247
TO-247 or D3PAK
TO-247
DQ
DQ
DQ
D
TO-247
810
TO-220
D3PAK[S]
TO-268
1550
1250
1250
2350
1430
2325
3600
2660
250
TO-220
DQ
DQ
D
TO-247
TO-247
1000
TO-247
DQ
DQ
D
TO-247
TO-247
TO-247 or D3PAK
TO-247
DQ
DQ
DQ
D
TO-247
250
TO-220
520
TO-247
520
D
APT15D60KG
TO-220
TO-247[B]
400
DQ
DQ
D
APT30DQ60BG
APT30DQ60KG
APT30D60BG
TO-247
600
400
TO-220
700
TO-247
480
DQ
DQ
D
APT40DQ60BG
APT60DQ60BG
APT60D60BG
TO-247
640
TO-247
920
TO-247 or D3PAK
TO-247
650
DQ
D
APT75DQ60BG
APT30D40BG
360
TO-247
400
200
540
D
APT60D40BG
TO-247
150
D
APT30D20BG
TO-247
448
Schottky
D
APT30S20BG
TO-247 or D3PAK
TO-247
250
APT60D20BG
T-MAX®[B2]
490
Schottky
Schottky
APT60S20BG
TO-247 or D3PAK
TO-247
690
APT100S20BG
Part numbers for D3 package—replace “B” with “S” in part number.
Datasheets available on www.microsemi.com
All products RoHS-compliant
13
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes
Volts Typ
25 °C
t(ns) Typ
25 °C
Q(nC) RR Typ
125 °C at IF = IF (avg)
Diode
Series
Part
Number
Volts
1200
1000
600
I (A)
Package
Dual
3450
1800
4000
2890
5350
5240
2350
3600
2350
4050
3645
400
700
650
920
980
1450
360
540
1050
650
448
490
840
690
2100
810
1550
2360
2350
2325
3600
520
250
520
480
400
700
700
700
480
2x27
2x30
2x53
2x60
2x93
2x100
2x28
2x55
2x60
2x95
2x100
2x30
2x30
2x60
2x60
2x100
2x100
2x30
2x60
2x100
2x100
2x30
2x60
2x100
2x100
2x30
2x15
2x15
2x30
2x30
2x60
2x60
2x15
2x15
2x15
2x30
2x30
2x30
2x30
2x30
2x40
2x60
2x60
2x30
2x60
2x30
2x30
2x30
2x30
2x60
2x100
2
31
25
38
30
47
45
29
34
30
43
45
20
23
27
40
30
34
22
30
37
36
25
35
39
40
26
20
28
29
30
29
35
21
15
20
22
19
23
25
25
22
26
30
22
30
25
21
21
25
35
40
D
DQ
D
DQ
D
DQ
D
D
DQ
D
DQ
DQ
D
DQ
D
DQ
APT2X30D120J
APT2X30DQ120J
APT2X60D120J
APT2X60DQ120J
APT2X100D120J
APT2X100DQ120J
APT2X30D100J
APT2X60D100J
APT2X60DQ100J
APT2X100D100J
APT2X100DQ100J
APT2X30DQ60J
APT2X30D60J
2.6
2.0
2.5
2.0
2.4
1.9
1.9
2.2
1.9
2.1
1.8
1.6
1.7
1.6
1.6
1.6
1.3
1.3
1.3
1.2
0.80
0.83
1.1
0.89
2.8
2.5
1.9
1.9
1.9
2.5
1.9
1.6
2.0
1.6
2.0
2.0
1.6
1.6
1.6
2.0
2.0
1.6
1.3
1.3
1.2
1.1
1.1
0.80
0.83
0.89
ISOTOP®[J] SOT-227
Antiparallel
Configuration
(Isolated Base)
ISOTOP®
APT2X60DQ60J
APT2X60D60J
APT2X100DQ60J
APT2X100D60J
APT2X30D40J
D
D
D
D
TO-247[BCA]
Common anode
400
300
APT2X60D40J
APT2X100D40J
APT2X101D30J
APT2X31S20J
D
Schottky
Schottky
APT2X61S20J
200
D
APT2X100D20J
APT2X101S20J
APT30DQ120BCTG
APT15DQ100BCTG
APT15D100BCTG
APT30D100BCTG
APT30D100BHBG
APT60DQ100LCTG
APT60D100LCTG
APT15D60BCTG
APT15DQ60BCTG
APT15D60BCAG
APT30DQ60BHBG
APT30DQ60BCTG
APT30D60BCTG
APT30D60BHBG
APT30D60BCAG
APT40DQ60BCTG
APT60DQ60BCTG
APT60D60LCTG
APT30D40BCTG
APT60D40LCTG
APT30D30BCTG
APT30D20BCTG
APT30D20BCAG
APT30S20BCTG
APT60S20B2CTG
APT100S20LCTG
Schottky
DQ
DQ
D
D
D
DQ
D
D
DQ
D
DQ
DQ
D
D
D
DQ
DQ
D
D
D
D
D
TO-247[BCT]
Common cathode
1200
TO-247 [BCT]
TO-247 [BCT]
TO-247 [BHB]
TO-247 [BHB]
TO-247 [BCA]
TO-264 [LCT]
TO-264 [LCT]
TO-247
TO-247 [BCT]
TO-247 [BCA]
TO-247 [BHB]
TO-247 [BCT]
TO-247 [BCT]
TO-247 [BHB]
TO-247 [BCA]
TO-247 [BCT]
TO-247 [BCT]
TO-264 [LCT]
TO-247 [BCT]
TO-264 [LCT]
TO-247 [BCT]
TO-247 [BCT]
TO-247 [BCA]
TO-247 [BCT]
T-MAX® [B2CT]
TO-264 [LCT]
1000
TO-247[BHB]
Half-bridge
600
T
-Max
640
920
360
540
1300
150
150
448
490
T-MAX® [B2CT]
Common cathode
400
300
D
200
Schottky
Schottky
Schottky
690
Part numbers for parallel configuration: replace 30, 60, or 100 with 31, 61, or 101, unless Schottky. Example: 2X30D120J becomes 2X31D120J. Part numbers for D3PAK
packages—replace “B” with “S” in part number.
TO-264[LCT]
Common cathode
Datasheets available on www.microsemi.com
All products RoHS-compliant
14
High-Voltage RF MOSFETs
The ARF family of RF power MOSFETs is optimized for
applications requiring frequencies as high as 150 MHz and
operating voltages as high as 400 V. Historically, RF power
MOSFETs were limited to applications of 50 V or less. This
limitation has been removed by combining Microsemi’s high-
voltage MOSFET technology with RF-specific die geometries.
impedance allows simpler transformers and combiners.
Paralleled devices can still operate into reasonable and
convenient impedances. The increased operating voltage also
lowers the DC current required for any given power output,
increasing efficiency and reducing the size, weight, and cost
of other system components. High breakdown voltage is a
necessity in high-efficiency switchmode amplifiers, such as
class C-E, which can see peak drain voltages of over 4x the
applied VDD.
Why higher voltage? Higher VDD means higher load impedance.
For 150 W output from a 50 V supply, the load impedance is
only 8 Ω. At 125 V, the load impedance is 50 Ω. The higher
POUT Freq.
(W) (MHz)
VDD/BVDSS
(V)
RthJC Package Class of
(OC/W) Style Operation
Part Number
ARF449AG/BG
ARF463AG/BG
90
120
100
100
65
150/450
125/500
125/500
250/900
165/500
125/500
250/1000
300/1200
165/500
165/500
165/500
200/1000
200/1000
165/500
165/500
165/500
125/500
250/1000
700/1000
380/500
250/1000
0.76
0.7
TO-247
TO-247
TO-247
TO-247
M174
TO-247
TO-247
TO-247
TO-264
T3A
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
D
M113/M174/M177
M208
T14
100
ARF463AP1G/BP1G 100
ARF446G/ARF447G 140
0.7
0.55
0.6
ARF521
150
150
150
150
270
300
300
300
300
300
350
400
750
750
750
750
750
150
65
TO-247
TO-264
ARF460AG/BG
ARF461AG/BG
ARF465AG/BG
ARF468AG/BG
ARF475FL
ARF476FL
ARF466AG/BG
ARF466FL
ARF479
0.5
65
0.5
60
0.5
45
0.38
0.31
0.31
0.35
0.13
0.31
0.28
0.18
0.12
0.12
0.12
0.12
0.13
150
150
45
T3
T2
T2B
T3C
T1
TO-264
T3A
45
150
45
T3C
ARF469AG/BG
ARF477FL
ARF1500
TO-264
T3A
65
T3
T4
T3A
40
T1
ARF1501
40
T1
ARF1510
40
T1
ARF1511
40
T1
D
ARF1519
25
T2
A-E
T4A
T5
High-Frequency RF MOSFETs
The VRF family of RF MOSFETs includes improved
replacements for industry-standard RF transistors.
They provide improved ruggedness by increasing
the BVDSS over 30 percent from the industry-standard
125 V to 170 V minimum. Low-cost flangeless
packages are another improvement that shows
Microsemi’s dedication to optimizing performance,
reducing cost, and improving reliability. We will
continue to offer more products with the new
reduced-cost flangeless packages.
Part
Number
POUT Freq. Gain Typ Eff. Typ
VDD/BVDSS
RthJC
(OC/W)
Package
Style
(W) (MHz)
(dB)
(%)
(V)
VRF148A
VRF141
VRF151
VRF152
VRF150
VRF161
VRF151G
VRF2933
VRF2944
30 175
16
13
14
14
11
25
16
25
25
17
21
21
50
45
50
50
50
50
55
50
50
45
45
45
65/170
28/80
1.52
0.60
0.60
0.60
0.60
0.50
0.30
0.27
0.22
0.13
0.13
0.10
M113
M174
M174
M174
M174
M177
M208
M177
M177
T2
150 175
150 175
150 175
150 150
200 175
300 175
300 150
400 150
65/170
50/140
65/170
65/170
65/170
65/170
65/170
65/170
65/170
65/170
VRF154FL 600
VRF157FL 600
VRF164FL 600
30
30
30
T2
T2
Datasheets available on www.microsemi.com
All products RoHS-compliant
15
Drivers and Driver-RF MOSFET Hybrids
The DRF1200/01 hybrids integrate drivers, bypass capacitors,
and RF MOSFETs into a single package. Integration maximizes
amplifier performance by minimizing transmission line parasitics
between the driver and the MOSFET. The DRF1300 and
DRF1301 have two independent channels, each containing
a driver and RF MOSFET in a push-pull configuration. The
DRF1400 is a half-bridge hybrid with symmetrically oriented
leads that can be eassily configured into a full-bridge converter.
The new DRF1510 is a full bridge product optimized for
maximum efficiency in class D amplifiers. All DRF parts feature
a proprietary anti-ring function to eliminate cross conduction in
bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting configuration.
Package
Style
Class of
Operation
Part Number
POUT (W)
Freq. (MHz)
VDD/BVDSS (V)
DRF1200
DRF1201
DRF1300
DRF1301
DRF1400
DRF1211
DRF1410
DRF1510
400
600
30
30
30
30
30
30
30
30
15/1000
15/1000
15/500
15/1000
15/500
15/500
15/500
15/500
T2B
T2B
T4
D-E
D-E
D-E
D-E
D-E
D-E
D-E
D-E
1000
1000
1000
600
T4
T4
T2B
T4A
T5
1000
2000
Reference Design Kits
All kits include a fully populated board attached to an aluminum heat sink, an extensive application note explaining the theory
of operation with designer’s recommendations for evaluation and board layout, and all key waveforms illustrated and described.
A complete parts list with recommended vendor part numbers and the board’s Gerber file are provided for an easy transition into
an end application.
DRF1200/CLASS-E, 13.56 MHz
DRF1200/CLASS-E, 27.12 MHz
The DRF1200/Class-E single-ended RF generator is a
reference design that allows the designer to evaluate an
85 percent efficient 1000 W Class-E RF generator.
DRF1300/CLASS-D, 13.56 MHz
The DRF1300/Class-D push-pull RF generator is a reference
design that allows the designer to evaluate an 80-percent
efficient 2000 W Class-D RF generator.
DRF1400/Class-D, 13.56 MHz
The DRF1400/Class-D half-bridge RF generator is a reference
design that allows the designer to evaluate an 85-percent
efficient 2500 W Class-D RF generator.
New DRF1410 and DRF1510
Reference Designs Coming Soon
Datasheets available on www.microsemi.com
All products RoHS-compliant EXCLUDING reference design kits
16
Power Modules Contents
IGBT Power Modules
Power Module Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18–22
Chopper and Phase Leg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3-Phase Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Triple Phase Leg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Triple Dual Common Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Dual Chopper. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Full and Asymmetrical Bridge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Single Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Single Switch + Series Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Dual Common Source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Intelligent Power Modules
Phase Leg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
MOSFET Power Modules
Microsemi combines a formidable array of technologies in
semiconductors, packaging, and automated manufacturing to
produce a wide range of high-quality modules optimized for the
following traits:
Boost and Buck Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Dual Chopper. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Full Bridge + Series and Parallel Diodes . . . . . . . . . . . . . . . . . . . . . . . 28
Asymmetrical Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Phase Leg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Phase Leg + Series and Parallel Diodes . . . . . . . . . . . . . . . . . . . . . . . 29
Phase Leg + Series Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Triple Phase Leg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Triple Dual Common Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Dual Common Source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Single Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Single Switch + Series Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Single Switch + Series and Parallel Diodes. . . . . . . . . . . . . . . . . . . . . 30
Interleaved PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Single and Dual Linear MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
• Reliability
• Efficiency and electrical performance
• Low cost
• Space savings
• Reduced assembly time
The readily available standard module product line spans a
wide selection of semiconductor (including Silicon Carbide)
circuit topologies, voltage and current ratings, and packages. If
you need even more flexibility or intellectual property protection,
Microsemi can customize a standard module with a low setup
cost and short lead time. Unique requirements can be met with
application specific power modules (ASPM).
Renewable Energy Power Modules
Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
PFC + Bypass Diode + Phase Leg. . . . . . . . . . . . . . . . . . . . . . . . . . . 31
PFC + Full Bridge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
PFC + Bypass Diode + Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Secondary Fast Rectifier + Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . 31
Boost Buck . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3-Level NPC Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
T-Type 3-Level Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Microsemi serves a broad spectrum of industrial applications for
welding, solar, induction heating, medical, UPS, motor control,
and SMPS markets as well as high-reliability applications for
semicap, defense, and aerospace markets. A wide selection
of construction materials enables Microsemi to manufacture
modules with the following features:
SiC Diode Power Modules
Dual Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
IGBT + SiC Diode Power Modules
Boost Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Dual Chopper. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
• Extended temperature range: –60 °C to 200 °C
• High reliability
MOSFET + SiC Diode Power Modules
Single Switch + Series FRED and SiC Parallel Diodes . . . . . . . . . . . . 34
Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Phase Leg + Series FRED and SiC Parallel Diodes. . . . . . . . . . . . . . . 34
Full Bridge + Series FRED and SiC Parallel Diodes. . . . . . . . . . . . . . . 34
Triple Phase Leg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
• Reduced size and weight
• High-reliability testing and screening options
• Short lead times
SiC MOSFET Power Modules
Microsemi’s experience and expertise in power electronic
conversion brings the most effective technical support for
your new development.
T-Type 3-Level Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3-Level NPC Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Phase Leg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Phase Leg: Very Low Inductance Package. . . . . . . . . . . . . . . . . . . . . 35
Triple Phase Leg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Boost Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
• Isolated gate driver
• Snubbers
• Mix-and-match semiconductors
• Short-circuit protection
• Temperature and current sensing
• Parameter binning
Diode Power Modules
Single Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3-Phase Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Full Bridge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Common Cathode–Common Anode–Doubler . . . . . . . . . . . . . . . . . . 36
Package Outline Drawings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37–40
17
Standard Electrical Configurations
Microsemi offers a wide range of standard electrical configurations housed in a variety of packages to match your specific needs for
high power-density and performance. Various semiconductor types are offered in the same topology.
IGBT
600 V–1700 V
MOSFET
75 V–1200 V
Diode
200 V–1700 V
Mix Si-SiC
600 V–1200 V
Full SiC
600 to 1700V
Electrical Topology
Asymmetrical bridge
•
•
•
•
•
•
Boost buck
Boost and buck chopper
Common anode
•
•
•
•
•
Common cathode
Dual boost and buck chopper
Dual common source
Dual diode
•
•
•
•
•
•
Full bridge
•
•
•
•
•
•
•
•
•
•
•
Full bridge with PFC
•
•
•
Full bridge with secondary fast rectifier bridge
Full bridge with series and parallel diodes
Interleaved PFC
•
Linear single and dual switch
Phase leg
•
•
•
•
•
Phase leg intelligent
Phase leg with PFC
•
•
•
•
•
•
•
Phase leg with series and parallel diodes
Single switch
•
Single switch with series and parallel diodes
Single switch with series diodes
3-Level NPC inverter
•
•
•
•
•
•
3-Level T-Type inverter
3-Phase bridge
•
•
•
•
Triple dual common source
Triple phase leg
•
•
•
•
•
Trench3
Trench4
Trench4 Fast
Trench5
MOSFET
FRED
IGBT
Diode
FREDFET
Std Rectifier
MOSFET
Diode
MOSFET
Super Junction Mosfet
18
Packaging
Improved Low-Profile Packages
SP1 (12 mm)
SP3F (12 mm)
SP4 (17 mm)
SP6 (17 mm)
SP4
SP6
SP1
SP3F
SP6-P
SP6LI
SP6-P (12 mm)
SP6LI (17 mm)
Industry-Standard Packages
SOT-227 (ISOTOP®)
SP2 (17 mm)
D3 (62 mm wide)
D4 (62 mm wide)
SOT-227
SP2
D3
D4
Package Advantages
12 mm
SP module
ISOTOP®
30 mm
17 mm
SP1 package:
SP3F package:
SP6-P package:
SP6 package:
• Replaces two
SOT-227 parts
• Replaces up to four
SOT-227 parts
• Replaces up to six
SOT-227 parts
Offers the same footprint and the same
pinout location as the popular 62 mm
package but with lower height, giving it
the following advantages:
• Improved assembly
time and cost
• Reduced assembly
time and cost
• Height compatible
with SOT-227
• Reduced stray inductance
• Height compatible
with SOT-227
• Height compatible
with SOT-227
• Low-inductance
solder pins
• Reduced parasitic resistance
• Higher efficiency at high frequency
• Copper base plate
• Copper base plate
• High current capability
19
Custom Power Modules
Microsemi created the application specific power module (ASPM) concept, and has been offering customized power modules
since 1983. Microsemi offers a complete engineered solution with mix-and-match capabilities in term of package, configuration,
performance, and cost.
Internal Printed Circuit Board
Package
• Not available in all modules.
• Standard or custom.
• Used to route gate signals’ tracks
to small signal terminals.
• Ensures environmental protection
and mechanical robustness.
• Used to mount gate circuit and protection
in case of intelligent power module.
Terminals
Power Semiconductor Die
• Screw-on or solder pins.
• IGBT, MOSFET, diode, SiC, thyristor
and switching devices soldered
to the substrates and connected
by ultrasonic aluminum wire bonds.
• Provides power and signal connections
with minimum parasitic resistance
and inductance.
Substrates
Base Plate
• Al2O3, AlN, and Si3N4
provide isolation and good heat
transfer to the base plate.
• Improves the heat transfer
to the heat sink.
• Copper for good thermal transfer.
• AlSiC, CuW, and CuMoCu
for improved reliability.
The following table shows the three customization levels.
Change Options:
Die
Substrate
Base Plate
Plastic Lid
Terminals
NRE Level
MOQ
Electrical/thermal performance
Die P/N
Material
Material
None to low
Electrical/thermal performance and
electrical configuration
Electrical/thermal performance, and
electrical configuration, and module housing
Material and
layout
Material and
layout
5 to 10
pieces
Die P/N
Die P/N
Material
Low to medium
Medium to high
Material and
shape
Material and
shape
Shape
Microsemi power modules are made of different sub-elements. Most of them are standard and can be reused to build infinite
solutions for the end user. Microsemi offers optimum development cost and cycle time thanks to long-term experience and a wide
range of available technologies.
Power Modules Features
• High power density
Flexibility
• Great level of integration
• Mix of silicon within the same package
• No quantity limitation
• Isolated and highly thermally-conductive substrate
• Internal wiring
• Minimum parasitics
Technology
• Minimum output terminals
• Mix-and-match components
• Fully engineered solutions
• Application oriented
Packaging Capability
• Standard and custom packages
• Standard and custom terminals
• Various substrate technologies
Customer Benefits
• Size and cost reduction
• Excellent thermal management
• Reduced external hardware
• Improved performance
• Reduced assembly time
• Optimizes losses
Reliability
• Coefficient of thermal expansion matching
Applications
• Solar, welding, plasma cutting, semicap, MRI and X-ray,
EV/HEV, induction heating, UPS, motor control, data
communication
• Easy to upgrade, lower part count,
shorter time to market, and IP protection
20
Rugged Custom Power Modules
Microsemi has acquired much experience
and know-how in module customization that
addresses rugged and wide temperature range
applications, offering solutions to meet the
expectations of next-generation integrated power
systems for the following attributes:
Various proposed solutions offer different costs and low volume of entry
Industrial
Application
Extended
Temp. Application
Harsh Environment
Application
No NRE
Low-volume entry
Low NRE
Low-volume entry
Medium to high NRE
Low-volume entry
Standard module
Modified standard
Custom module
•
•
•
•
•
• Improved reliability
• Wider operating temperatures
• Higher power
•
• Higher efficiency
• Lower weight and size
• Lower cost
Solder
DBC Substrate Joint
Dice
Applications
Solder Joint
• Avionics actuation system
• Avionics lift and pump
Base Plate
• Military ground vehicle
Module performance and reliability
depends on the choice of assembly
materials
Thermal
Conductivity
(W/m.K)
• Power supply and motor control
• Navy ship auxiliary power supply
• Down hole drilling
CTE
(ppm/K)
R
or R
ΘJ(CK/W)thJC
Silicon die (120 mm2)
Cu/Al2O3
4
136
Temperature coefficients of expansion
(TCEs) with more closely matched
materials increase the module's lifetime
by reducing the stress at both the
interface and interior of the materials.
Test Capabilities
17/7
7/7
390/25
170/25
390/170
170/170
170/60
0.35
0.38
0.28
0.31
0.31
• X-Ray inspection
• Dielectric test (up to 6 kV)
• Electrical testing at specified
temperature
• Burn-in
• Acoustic imaging
AlSiC/Al2O3
Cu/AlN
17/5
7/5
AlSiC/AlN
The higher the thermal conductivity,
the lower the junction-to-case thermal
resistance and the lower the delta of
junction temperature of the device
during operation. This will minimize the
effect of power cycling on the dice.
AlSiC/Si3N4
7/3
Reliability Testing Capabilities
CTE
Thermal
Conductivity
Density
(g/cc)
• Power cycling
• Hermetic sealing
• Moisture
• Salt atmosphere
• HTGB
• Temperature shock
• HAST
• H3TRB
Material (ppm/K)
(W/m.K)
CuW
AlSiC
Cu
6.5
7
17
190
170
390
17
2.9
8.9
Another important feature is the material
density, particularly for the baseplate.
Taking copper as the reference, AlSiC
has a density of 1/3, while CuW has
twice the density. Therefore, AlSiC will
provide substantial weight reduction
while increasing reliability.
Base plate
Al2O
AlN3
Si3N4
7
5
3
25
170
60
Substrate
Die
Si
SiC
4
2.6
136
270
• Altitude
• Mechanical shock, vibration
Expertise Capabilities
• Cross-sectioning
• Structural analysis
All tests can be conducted upon demand
by sampling or at 100 percent. Tests can be
performed in-house or in an external lab.
Our Core Competencies
• Extensive experience with rugged
solutions for harsh environments
• Wide range of silicon technologies
• Wafer fab capabilities
• Mix of assembly technologies
• Hermetic and robust plastic packages
• Custom test and burn-in solutions
• ISO9001-certified
• End-of-life (obsolescence) management
• Thermal management
• Material expertise
• Product life management and risk analysis
21
Power Module Part Numbering System
IGBT Modules
MOSFET Modules
Diode Modules
APT
APT
APT
GL
475
A
120
T
D3
G
C
60 DA M24
T
1
G
DR 90
X
160
1
G
MSC
MSC
MSC
I
II
III
IV
V
VI
VII
VIII
I
II
III IV
V
VI
VII
VIII
I
II
III
IV
V
VI
VII
TradeMark
IGBT Type:
TradeMark
MOSFET Type:
TradeMark
I
I
I
Diode Type:
GL = TRENCH 4
GLQ = High-speed TRENCH 4
GT = TRENCH 3
MC - SM = MOSFET SiC
M = MOSFET
C = Super Junction MOSFET
DF = FRED
DR = Standard Rectifier
DC = SiC
II
II
II
GTQ = TRENCH 5
DSK = Schottky
GV = Mix NPT/TRENCH
Blocking Voltage:
CV = Mix TRENCH/Super Junction MOSFET
08 = 75 V
80 = 800 V
90 = 900 V
100 = 100 V
120 = 120 V
Current:
IF at Tc =80 °C
III
10 = 100 V
20 = 200 V
50 = 500 V
60 = 600 V
III
Current:
Ic at Tc = 80 °C
III
Topology:
AA = Dual Common Anode
Topology:
BB = Boost Buck
A = Phase Leg
BB = Boost Buck
Topology:
AK = Dual Series
IV
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
KK = Dual Common Cathode
H = Single Phase Bridge
U = Single Switch
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
X = Three Phase Bridge
Blocking Voltage:
20 = 200 V
40 = 400 V
IV
IV
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level
HR = T-Type 3-Level
SDA = Double Boost and Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level NPC
60 = 600 V
V
100 = 1000 V
120 = 1200 V
160 = 1600 V
170 = 1700 V
U = Single Switch
VDA = Interleaved PFC
X = Three Phase Bridge
U = Single Switch
VDA = Interleaved PFC
Package:
1 = SP1
VI
3 = SP3F
Blocking Voltage:
60 = 600 V
120 = 1200 V
170 = 1700 V
RDSON at Tc = 25 °C
240 = 2400 mΩ
24 = 240 mΩ
G = RoHS-compliant
VII
V
V
M24 = 24 mΩ
Option:
Option:
A = AIN Substrate
A = AlN Substrate
C = SiC Diode
C = SiC Diode
D = Series Diode
F = FREDFET
S = Series and Parallel Diodes
T = Temperature Sensor
U = Ultra-fast FREDFET
VI
D = Series Diode
T = Temperature Sensor
W = Clamping Parallel Diode
VI
Package:
1 = SP1
2 = SP2
3 = SP3F
Package:
1 = SP1
VII
P = SP6-P
D3 = D3 (62 mm)
D4 = D4 (62 mm)
2 = SP2
VII
3 = SP3F
P = SP6-P
LI = SP6LI
G = RoHS-compliant
VIII
G = RoHS-compliant
VIII
A
AIN substrate for higher thermal conductivity
AlSiC base plate material for improved temperature
cycling capabilities
Temperature sensor (NTC or PTC) for case temperature
information
SiC diode for higher efficiency
Si3N4 substrate
Press fit terminals (for SP3F package only)
Gold pin terminals (SP1 only)
Phase change material option
Optional Materials
M
Optional materials are available upon demand for most of the
listed standard power modules. Options are indicated with a
letter in the suffix of the module part number. The temperature
sensor option is listed as “YES” or “OPTION” when available
for a standard part or on-demand.
T
C
N
E
X
L
The following tables list the options available for our product
categories.
22
IGBT Power Modules
SOT-227
Chopper and Phase Leg
V
IGBT IC (A) TC = VCE (on) (V) at
(BR)CES
Package NTC
…DA... or ...U2
...SK... or ...U3
…A...
(V)
Type
80 ºC
Rated IC
75
100
150
150
200
200
300
300
300
400
450
600
50
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
1.85
1.85
1.65
1.65
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
1.85
1.85
1.85
1.85
2.05
2.05
2.05
2.05
2.05
2.05
2.05
2
SP1
SP1
Yes
Yes
APTGT75DA60T1G
APTGT100DA60T1G
APTGT75A60T1G
APTGT100A60T1G
APTGT150A60T1G
APTGT150A60T3AG
APTGT200A602G
SP1
Yes
APTGT150DA60T1G APTGT150SK60T1G
SP3F
SP2
Yes
No
SP1
SP3F
SP4
Yes
APTGT200DA60T3AG APTGT200SK60T3AG APTGT200A60T3AG
APTGT300A60TG
APTGT300DA60G
600 Trench 3
Yes
SP6
Option
APTGT300SK60G
APTGT300A60G
APTGT300A60D3G
APTGT400A60D3G
APTGT450A60G
APTGT600A60G
D3
Option APTGT300DA60D3G APTGT300SK60D3G
Option APTGT400DA60D3G
D3
SP6
Option
Option
No
APTGT450DA60G
APTGT600DA60G
APT50GLQ65JU2
APT100GLQ65JU2
APTGT450SK60G
APTGT600SK60G
SP6
SOT-227
SOT-227
SP1
Trench 4
50
No
APT100GLQ65JU3
650
Fast
100
600
60
Yes
APTGLQ100A65T1G
APTGLQ600A65T6G
SP6
SP1
SP3F
SP1
SOT-227
SOT-227
SP1
SP4
SOT-227
SP1
SP4
SP1
Yes
SP2
Yes
APTGTQ100DA65T1G APTGTQ100SK65T1G APTGTQ100A65T1G
APTGTQ200DA65T3G APTGTQ200SK65T3G APTGTQ200A65T3G
APTGT35A120T1G
APT35GT120JU2
APT50GT120JU2
650 Trench 5
120
35
Yes
Yes
35
No
APT35GT120JU3
APT50GT120JU3
50
No
50
Yes
APTGT50A120T1G
APTGT75A120T1G
50
Yes
APTGT50DA120TG
APT75GT120JU2
APTGT50SK120TG
APT75GT120JU3
75
No
75
Yes
SP3F
75
Yes
APTGT75DA120TG
APTGT100DA120T1G
APT100GT120JU2
APTGT75SK120TG
APT100GT120JU3
100
100
100
100
150
150
150
200
200
300
300
400
400
40
Yes
SOT-227
SP3F
SP4
No
1200 Trench 3
Yes
APTGT100A120T3AG
APTGT100A120TG
APTGT150A120G
APTGT150A120T3AG
APTGT150A120TG
APTGT200A120G
APTGT200A120D3G
APTGT300A120G
APTGT300A120D3G
APTGT400A120G
APTGT400A120D3G
Yes
SP6
Option
Yes
APTGT150DA120G
APTGT200DA120G
APTGT150SK120G
SP3F
SP4
Yes
Option
SP6
APTGT200SK120G
APTGT300SK120G
APTGT400SK120G
APT40GL120JU3
D3
Option APTGT200DA120D3G
SP6
Option
Option
Option
Option
No
APTGT300DA120G
SP4
D3
SP6
APTGT400DA120G
D3
SOT-227
SP1
APT40GL120JU2
APTGL90DA120T1G
90
Yes
APTGL90A120T1G
APTGL180A1202G
APTGL180A120T3AG
APTGL325A120D3G
180
180
325
475
700
100
100
100
150
200
300
400
30
SP2
SP3F
D3
D3
D3
SP3F
SP1
No
Trench 4
1200
Yes
Option
Option APTGL475DA120D3G APTGL475SK120D3G APTGL475A120D3G
Option APTGL700DA120D3G APTGL700SK120D3G
Yes
APTGLQ100A120T3AG
Yes APTGLQ100DA120T1G
SP4
SP4
Yes
Yes
APTGLQ100A120TG
APTGLQ150A120TG
APTGLQ200A120T3AG
Trench 4
Fast
SP6
SP3F
SP6C
SP6
Yes
No
APTGLQ300SK120G APTGLQ300A120G
APTGLQ400A120T6G
Yes
SP1
Yes
APTGT30A170T1G
50
50
2
SP1
Yes
APTGT50SK170T1G
APTGT50SK170TG
APTGT100SK170TG
APTGT150SK170G
APTGT50A170T1G
APTGT50A170TG
APTGT100A170TG
2
SP4
Yes
100
150
200
225
300
300
2
SP4
Yes
1700 Trench 3
2
SP6
Option
Option
2
D3
APTGT200A170D3G
APTGT225A170G
APTGT300A170G
APTGT300A170D3G
2
SP6
Option
Option
APTGT225DA170G
APTGT300DA170G
APTGT225SK170G
APTGT300SK170G
D3
2
SP6
2
D3
Option APTGT300DA170D3G
All Power Modules RoHS-compliant
23
IGBT Power Modules (continued)
Three-Phase Bridge
V(BR)CES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
30
50
75
25
35
40
1.5
1.5
1.5
1.7
1.7
1.85
SP3F
SP3F
SP3F
SP3F
SP3F
SP3F
Yes
Yes
Yes
Yes
Yes
Yes
APTGT30X60T3G
APTGT50X60T3G
APTGT75X60T3G
APTGT25X120T3G
APTGT35X120T3G
APTGL40X120T3G
600
Trench 3
Trench 3
Trench 4
1200
Three-Phase Leg
SP3F
V(BR)CES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
50
150
30
90
75
1.5
1.5
1.65
1.65
1.7
SP6-P
SP6-P
SP3F
SP6-P
SP6-P
SP6-P
SP6-P
Option
Option
Yes
Yes
Option
Yes
APTGT50TA60PG
APTGT150TA60PG
APTGTQ50TA65T3G
APTGTQ150TA65TPG
APTGT75TA120PG
APTGT100TA120TPG
APTGL120TA120TPG
600
650
Trench 3
Trench 5
Trench 3
Trench 4
1200
100
120
1.7
1.85
Yes
SP4
Triple Dual Common Source
V(BR)CES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
50
75
100
150
75
1.5
1.5
1.5
1.5
1.7
1.85
2
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
Option
Option
Option
Option
Option
Yes
APTGT50TDU60PG
APTGT75TDU60PG
APTGT100TDU60PG
APTGT150TDU60PG
APTGT75TDU120PG
APTGL120TDU120TPG
APTGT50TDU170PG
600
Trench 3
Trench 3
Trench 4
Trench 3
1200
1700
120
50
SP6-P
Option
Dual Chopper
V(BR)CES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
...DDA...
...DSK...
TC = 80 ºC (V) at Rated IC
50
75
60
1.5
1.5
SP3F
SP3F
SP3F
Yes
Yes
Yes
APTGT50DDA60T3G
APTGT75DDA60T3G
APTGTQ100DDA65T3G
600
650
Trench 3
Trench 5
1.65
Trench 4
Fast
Trench 4
Fast
50
50
1.85
1.85
SP3F
SP3F
Yes
Yes
APTGLQ50DDA65T3G
APTGLQ50VDA65T3G
Trench 3
50
60
90
1.7
SP3F
SP3F
SP3F
Yes
Yes
Yes
APTGT50DDA120T3G
APTGL60DDA120T3G
APTGL90DDA120T3G
1200
1.85
1.85
Trench 4
APTGL90DSK120T3G
All Power Modules RoHS-compliant
24
IGBT Power Modules (continued)
Full and Asymmetrical
SP1
V(BR)CES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
...H...
...DH...
TC = 80 ºC (V) at Rated IC
20
30
50
50
75
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SP1
SP1
SP1
SP3F
SP1
SP2
SP3F
SP4
SP3F
SP4
SP6
SP6
SP3F
SP1
SP3F
SP1
SP3F
SP6C
SP6
SP3F
SP3F
SP3F
SP4
SP3F
SP4
SP4
SP6
SP6
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
APTGT20H60T1G
APTGT30H60T1G
APTGT50H60T1G
APTGT50H60T3G
APTGT75H60T1G
APTGT75H60T2G
APTGT75H60T3G
APTGT100H60TG
APTGT100H60T3G
APTGT150H60TG
APTGT200H60G
APTGT50DH60T1G
75
75
600
Trench 3
SP2
100
100
150
200
300
30
50
50
75
100
200
300
60
35
50
50
75
75
100
100
150
200
40
60
90
25
25
40
75
75
150
200
30
50
100
150
APTGT100DH60TG
1.5
1.5
1.5
APTGT150DH60TG
APTGT200DH60G
APTGT300DH60G
No
APTGT300H60G
1.95
1.85
1.85
1.85
1.85
1.85
1.85
1.65
1.7
1.7
1.7
1.7
1.7
Yes
Yes
Yes
Yes
Yes
No
Option
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
APTGLQ30H65T3G
APTGLQ50H65T1G
APTGLQ50H65T3G
APTGLQ75H65T1G
APTGLQ100H65T3G
APTGLQ200H65G
APTGLQ300H65G
APTGTQ100H65T3G
APTGT35H120T3G
APTGT50H120T3G
Trench 4
Fast
650
650
SP3F
Trench 5
Trench 3
APTGT50DH120TG
APTGT75DH120T3G
APTGT75H120TG
1.7
1.7
1.7
1.7
APTGT100DH120TG
APTGT100H120G
APTGT150H120G
APTGT200H120G
APTGL40H120T1G
APTGL60H120T3G
APTGL90H120T3G
APTGLQ25H120T1G
APTGLQ25H120T2G
APTGLQ40H120T1G
APTGLQ75H120T3G
APTGLQ75H120TG
APTGLQ150H120G
APTGLQ200H120G
APTGT30H170T3G
APTGT50H170TG
APTGT100H170G
APTGT150H170G
No
No
APTGT150DH120G
APTGT200DH120G
SP4
SP6
SP1
SP3F
SP3F
SP1
SP2
SP1
SP3F
SP4
SP6C
SP6
1200
1.85
1.85
1.85
2.05
2.05
2.05
2.05
2.05
2.05
2.05
2
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
Option
Yes
Yes
No
Trench 4
Trench 4
Fast
SP3F
SP4
SP6
SP6 Full Bridge
2
2
2
APTGT50DH170TG
APTGT150DH170G
1700 Trench 3
SP6
No
All Power Modules RoHS-compliant
25
IGBT Power Modules (continued)
Single Switch
VCES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
600
Trench 3
Trench 3
750
400
600
475
700
400
600
1.5
1.7
1.7
1.85
1.85
2
D4
D4
D4
D4
D4
D4
D4
No
No
No
No
No
No
No
APTGT750U60D4G
APTGT400U120D4G
APTGT600U120D4G
APTGL475U120D4G
APTGL700U120D4G
APTGT400U170D4G
APTGT600U170D4G
1200
Trench 4
Trench 3
D4
1700
2
Single Switch + Series Diode
VCES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
1200
Trench 4
475
1.85
SP6
No
APTGL475U120DAG
Dual Common Source
SP4
VCES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
100
200
300
600
50
1.5
1.5
1.4
1.4
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
2
SP4
SP4
SP6
SP6
SP4
SP4
SP4
SP6
SP4
SP6
SP6
SP6
SP4
SP6
SP6
Yes
Yes
No
No
Yes
Yes
Yes
No
Yes
No
No
No
Yes
No
No
APTGT100DU60TG
APTGT200DU60TG
APTGT300DU60G
APTGT600DU60G
APTGT50DU120TG
APTGT75DU120TG
APTGT100DU120TG
APTGT150DU120G
APTGT150DU120TG
APTGT200DU120G
APTGT300DU120G
APTGT400DU120G
APTGT100DU170TG
APTGT225DU170G
APTGT300DU170G
600
Trench 3
75
100
150
150
200
300
400
100
225
300
1200
1700
Trench 3
Trench 3
SP6
2
2
Intelligent Power Modules
Phase Leg
VCES
(V)
IGBT
Type
IC (A)
VCE (on)
Package
NTC
Part Number
TC = 80 ºC (V) at Rated IC
600
Trench 3
Trench 3
Trench 4
400
300
325
1.5
1.7
1.8
LP8
LP8
LP8
No
No
No
APTLGT400A608G
APTLGT300A1208G
APTLGL325A1208G
1200
LP8
All Power Modules RoHS-compliant
26
MOSFET Power Modules
SOT-227
Chopper
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Package
NTC
DA...or...U2
SK...or...U3
11
4.5
2.25
22
8
5
100
207
370
71
147
250
300
30
30
32
125
140
43
40
70
25
44
33
59
17
23
SOT-227
SP4
SP6
SOT-227
SP4
SP6
No
Yes
No
No
Yes
Option
Option
No
No
No
Option
Option
No
No
Yes
No
Yes
Yes
Option
Yes
APT10M11JVRU2
APTM10DAM05TG
APTM10DAM02G
APT20M22JVRU2
APTM20DAM08TG
APTM20DAM05G
APTM20DAM04G
APT5010JVRU2
APT5010JLLU2
APT50M75JLLU2
APTM50DAM19G
APTM50DAM17G
APT58M50JU2
APT10M11JVRU3
APTM10SKM05TG
APTM10SKM02G
APT20M22JVRU3
APTM20SKM08TG
100
200
MOS 5
MOS 5
MOS 7
MOS 5
SP1
4
SP6
APTM20SKM04G
APT5010JVRU3
APT5010JLLU3
APT50M75JLLU3
APTM50SKM19G
APTM50SKM17G
APT58M50JU3
APT40N60JCU3
APTC60SKM24T1G
APT33N90JCU3
APTC90SKM60T1G
100
100
75
19
17
65
70
24
120
60
SOT-227
SOT-227
SOT-227
SP6
500
MOS 7
MOS 8
SP6
SOT-227
SOT-227
SP1
SOT-227
SP1
SP4
SP6
SP1
SP1
APT40N60JCU2
600
900
Super
Junction
MOSFET
APT33N90JCU2
APTC90DAM60T1G
APTM100DA18TG
APTM100DAM90G
APTM100DA33T1G
APTM120DA30T1G
SP3F
180
90
330
300
MOS 7
1000
1200
MOS 8
MOS 8
APTM100SK33T1G
Yes
SP4
Dual Chopper
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Package
NTC
...DDA...
...DSK...
19
9
100
65
45
70
35
24
150
350
50
100
24
37
38
29
54
70
21
17
SP3F
SP3F
SP3F
SP3F
SP1
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
APTM10DSKM19T3G
APTM10DSKM09T3G
100
500
MOS 5
MOS 7
APTM50DDA10T3G
APTM50DDAM65T3G
APTC60DDAM45T1G
APTC60DDAM70T1G
APTC60DDAM35T3G
APTC60DDAM24T3G
APTC80DDA15T3G
SP1
Super
Junction
MOSFET
600
SP3F
SP3F
SP3F
SP3F
APTC60DSKM24T3G
APTM100DSK35T3G
SP6
800
1000
MOS 7
27
MOSFET Power Modules (continued)
Full Bridge
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
4.5
19
9
20
16
10
8
140
100
75
75
65
65
38
35
150
70
45
83
207
50
100
62
74
125
147
18
24
32
32
37
37
64
70
19
29
38
21
29
54
70
15
21
11
21
23
44
14
17
17
33
14
25
6
SP6
SP3F
SP3F
SP4
SP4
SP6
No
Yes
Yes
Yes
Yes
No
APTM10HM05FG
APTM10HM19FT3G
APTM10HM09FT3G
APTM20HM20FTG
APTM20HM16FTG
APTM20HM10FG
APTM20HM08FG
APTM50H14FT3G
APTM50H10FT3G
APTM50HM75FTG
APTM50HM75FT3G
APTM50HM65FTG
APTM50HM65FT3G
APTM50HM38FG
APTM50HM35FG
APTM50H15FT1G
APTC60HM70T1G
APTC60HM45T1G
APTC60HM83FT2G
APTC60HM70T3G
APTC60HM35T3G
APTC60HM24T3G
APTM60H23FT1G
APTC80H15T1G
100
200
FREDFET 5
FREDFET 7
SP1
SP6
No
SP3F
SP3F
SP4
SP3F
SP4
SP3F
SP6
SP6
SP1
SP1
SP1
SP2
Yes
Yes
Yes
Yes
Yes
Yes
No
FREDFET 7
FREDFET 8
500
No
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
No
SP3F
Super Junction
MOSFET
600
70
35
24
SP3F
SP3F
SP3F
SP1
FREDFET 8
230
150
290
150
120
60
450
350
350
180
460
290
1400
SP1
800
900
SP3F
SP3F
SP1
SP3F
SP3F
SP4
SP3F
SP6
SP3F
SP6
APTC80H29T3G
APTC80H15T3G
APTC90H12T1G
Super Junction
MOSFET
APTC90HM60T3G
APTM100H45FT3G
APTM100H35FTG
APTM100H35FT3G
APTM100H18FG
APTM100H46FT3G
APTM120H29FG
APTM120H140FT1G
FREDFET 7
1000
1200
SP4
FREDFET 8
FREDFET 7
FREDFET 8
Yes
No
Yes
SP1
Full Bridge + Series and Parallel
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
200
500
1000
MOS 7
MOS 7
MOS 7
20
75
450
62
32
13
SP4
SP4
SP4
Yes
Yes
Yes
APTM20HM20STG
APTM50HM75STG
APTM100H45STG
Asymmetrical Bridge
SP6
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
100
500
MOS5
MOS 7
4.5
38
207
64
SP6
SP6
No
No
APTM10DHM05G
APTM50DHM38G
Super Junction
MOSFET
600
24
70
SP3F
Yes
APTC60DHM24T3G
All Power Modules RoHS-compliant
28
MOSFET Power Modules (continued)
Phase Leg
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
4.5
2.25
10
8
5
4
38
35
19
17
45
35
24
24
110
207
370
125
147
250
300
64
SP4
SP6
SP4
SP4
SP6
SP6
SP4
SP4
SP6
SP6
SP1
SP1
SP1
SP2
SP1
Yes
Option
Yes
APTM10AM05FTG
APTM10AM02FG
APTM20AM10FTG
APTM20AM08FTG
APTM20AM05FG
APTM20AM04FG
APTM50AM38FTG
APTM50AM35FTG
APTM50AM19FG
APTM50AM17FG
APTC60AM45T1G
APTC60AM35T1G
APTC60AM24T1G
APTC60AM242G
APTM60A11FT1G
100
FREDFET 5
SP1
SP2
SP4
Yes
200
FREDFET 7
Option
Option
Yes
70
Yes
500
600
FREDFET 7
125
140
38
54
70
Option
Option
Yes
Yes
Yes
Super Junction
MOSFET
70
30
No
Yes
FREDFET 8
Super Junction
MOSFET
900
1000
1200
60
44
SP1
Yes
APTC90AM60T1G
180
90
290
150
33
59
25
45
SP4
SP6
SP4
SP6
Yes
Option
Yes
APTM100A18FTG
APTM100AM90FG
APTM120A29FTG
APTM120A15FG
FREDFET 7
FREDFET 7
Option
Phase Leg + Series and Parallel
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
10
6
38
125
225
64
110
26
SP4
SP6
SP4
SP6
SP4
SP6
SP6
Yes
No
Yes
No
Yes
No
No
APTM20AM10STG
APTM20AM06SG
APTM50AM38STG
APTM50AM24SG
APTM100A23STG
APTM100A13SG
APTM120A20SG
200
500
MOS 7
MOS 7
24
230
130
200
1000
1200
MOS 7
MOS 7
49
37
Phase Leg + Series Diodes
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
SP6
1000
1200
MOS 7
MOS 7
130
200
49
37
SP6
SP6
No
No
APTM100A13DG
APTM120A20DG
Triple Phase Leg
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
75
MOSFET
4.2
19
9
16
65
35
24
150
60
350
90
50
100
74
37
54
70
21
44
17
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
Option
Option
Option
Option
Option
Option
Yes
Option
Yes
Option
APTM08TAM04PG
APTM10TAM19FPG
APTM10TAM09FPG
APTM20TAM16FPG
APTM50TAM65FPG
APTC60TAM35PG
APTC60TAM24TPG
APTC80TA15PG
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
SP6-P
600
Super Junction
MOSFET
800
900
1000
APTC90TAM60TPG
APTM100TA35FPG
FREDFET 7
All Power Modules RoHS-compliant
29
MOSFET Power Modules (continued)
Triple Dual Common Source
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
600
800
Super Junction
MOSFET
35
150
54
21
SP6-P
SP6-P
Option
Option
APTC60TDUM35PG
APTC80TDU15PG
SP1
SP3F
SP4
Dual Common Source
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
100
MOS 5
MOS 7
MOS 7
2.25
8
5
4
150
370
147
250
300
45
SP6
SP4
SP6
SP6
SP6
No
Yes
No
No
No
APTM10DUM02G
APTM20DUM08TG
APTM20DUM05G
APTM20DUM04G
APTM120DU15G
200
1200
Single Switch
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
2.25
1.5
3
430
640
434
371
97
SP6
SP6
SP6
SP6
SP6
SP6
SP6
Option
Option
Option
Option
Option
Option
Option
APTM10UM02FAG
APTM10UM01FAG
APTM20UM03FAG
APTM50UM09FAG
APTM100UM60FAG
APTM100UM45FAG
APTM120UM70FAG
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
9
60
45
70
1000
1200
FREDFET 7
FREDFET 7
160
126
Single Switch + Series Diode
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
65
45
70
110
160
126
SP6
SP6
SP6
No
No
No
APTM100UM65DAG
APTM100UM45DAG
APTM120UM70DAG
1000
1200
MOS 7
MOS 7
Single Switch + Series and Parallel
SP6
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
200
500
1000
1200
MOS 7
MOS 7
MOS 7
MOS 7
4
13
65
100
310
250
110
86
SP6
SP6
SP6
SP6
Option
Option
Option
Option
APTM20UM04SAG
APTM50UM13SAG
APTM100UM65SAG
APTM120U10SAG
Interleaved PFC
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
SP6-P
Super Junction
MOSFET
45
24
38
70
SP1
SP3F
Yes
Yes
APTC60VDAM45T1G
APTC60VDAM24T3G
600
All Power Modules RoHS-compliant
30
MOSFET Power Modules (continued)
Single and Dual Linear MOSFET
SP3F
SP1
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ)
Shunt Resistor
(mR)
Package NTC
600
MOS4 Linear
125
600
20
20
SP3F
SP1
Yes
APTML602U12R020T3AG
1000 MOS4 Linear
Yes APTML100U60R020T1AG
Renewable Energy Power Modules
Full Bridge
VCES
(V)
IC (A)
VCE (on) (V)
Technology
Package NTC
Part Number
SP1
TC = 80 ºC at Rated IC
Mix Trench IGBT
& Super Junction
MOSFET
50
50
83MR/1.5
45MR/1.5
SP1
Yes
Yes
APTCV40H60CT1G
APTCV50H60T3G
600
SP3F
SP3F
PFC + Bypass Diode + Phase Leg
VCES
(V)
IC (A)
VCE (on) (V)
Technology
Package NTC
Special
Part Number
TC = 80 ºC at Rated IC
38
38
27
45MR
45MR
83MR
SP1
SP1
SP1
N/A
N/A
N/A
10 A PFC SiC Diode
APTC60AM45BC1G
APTC60AM45B1G
Super Junction
MOSFET
600
10 A PFC SiC Diode
PFC + Bypass Diode + Full Bridge
VCES
(V)
IC (A)
VCE (on) (V)
Technology
Package NTC
Special
Part Number
TC = 80 ºC at Rated IC
Mix Trench IGBT
& Super Junction
MOSFET
38
38
29
1.5/45MR
1.5/45MR
70MR
SP3F
SP3F
SP3F
Yes
Yes
Yes
20 A PFC SiC Diode APTCV60HM45BC20T3G
APTCV60HM45BT3G
600
Super Junction
MOSFET
APTC60HM70BT3G
Secondary Fast Rectifier + Full Bridge
VCES
(V)
IC (A)
VCE (on) (V)
Technology
Package NTC
Special
Part Number
TC = 80 ºC at Rated IC
20 A SiC
Antiparallel Diode
Mix Trench IGBT
& Super Junction
MOSFET
38
38
29
50
1.5/45MR
1.5/45MR
70MR
SP3F
SP3F
SP3F
SP3F
Yes
Yes
Yes
Yes
APTCV60HM45RCT3G
APTCV60HM45RT3G
APTC60HM70RT3G
APTGT50H60RT3G
600
Super Junction
MOSFET
Trench 3
1.5
31
Renewable Energy Power Modules (continued)
Boost Buck
VCES
(V)
IC (A)
VCE (on) (V)
Technology
Package NTC
Part Number
TC = 80 ºC at Rated IC
Super Junction
MOSFET
70
24MR
1.5
SP3F
SP3F
Yes
Yes
APTC60BBM24T3G
APTGT100BB60T3G
600
Trench 3
100
Three-Level NPC Inverter
SP1
VCES
(V)
IC (A)
TC = 80 ºC
VCE (on) (V)
at Rated IC
Technology
Package NTC
Part Number
20
30
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
1.8
2
SP1
SP1
No
No
APTGT20TL601G
APTGT30TL601G
APTGT50TL60T3G
APTGT50TL601G
APTGT75TL60T3G
50
SP3F
SP1
Yes
No
50
600
Trench 3
75
SP3F
SP3F
SP6
Yes
100
150
200
300
300
400
50
Yes APTGT100TL60T3G
No
No
No
No
No
APTGT150TL60G
APTGT200TL60G
APTGT300TL60G
APTGT300TL65G
APTGT400TL65G
SP3F
SP6
SP6
SP6
Trench 3
Trench 4 Fast
Trench 4
650
SP6
SP3F
SP3F
SP6
Yes APTGLQ50TL65T3G
Yes APTGL60TL120T3G
60
1200
1700
240
No
No
APTGL240TL120G
APTGT100TL170G
Trench 3
100
SP6
RDS (on)
VCES
(V)
VCE (on) IGBT (V)
/IC (A)
Technology Super Junction
MOSFET (mΩ)
Package NTC
Part Number
24
1.5/75
1.5/75
1.5/50
1.5/30
1.85/50
SP3F
SP3F
SP3F
SP3F
SP3F
Yes APTCV60TLM24T3G
Yes APTCV60TLM45T3G
Yes APTCV60TLM70T3G
Yes APTCV60TLM99T3G
SP6 3-Level
Mix Trench
45
IGBT and
Super
Junction
MOSFET
600
900
70
99
120
Yes
APTCV90TL12T3G
T-Type 3-Level Inverter
VCES
IC (A)
VCE (on) (V)
Technology
(V)
Package NTC
Special
Part Number
TC = 80 ºC at Rated IC
40
80
2.05
2.05
2.05
SP3F
SP3F
SP6
Yes 10A/600 V SiC
Yes 30A/600 V SiC
No
APTGLQ40HR120CT3G
APTGLQ80HR120CT3G
APTGLQ200HR120G
600/1200
Trench 4 Fast
200
32
Power Modules with SiC Schottky Diodes
SiC Schottky diodes offer superior
dynamic and thermal performance
over conventional silicon power
diodes. The main advantages
of the SiC Schottky diodes are:
• Usable 175 °C junction temperature—
safely operate at higher temperatures
• Reduced system size
• Fewer/smaller
components
Operating Frequency vs Drain Current
400
300
200
100
0
Extremely fast switching of SiC Schottky
diode enables designs with:
Applications:
• Improved system efficiency
• Higher reliability
• Lower system switching losses
• Lower system cost
• PFC
• Essentially zero forward and
reverse recovery—reduced switch
and diode switching losses
• Temperature independent
switching behavior—stable high
temperature performance
• Output rectification
• Solar inverter
• Motor control
• Snubber diode
• Smaller EMI filter
• Smaller magnetic components
• Smaller heat-sink
10
20
30
40
50
60
Drain Current (A)
• Positive temperature coefficient
of VF—ease of parallel operation
• Smaller switches, eliminates snubbers
Diode Power Modules with SiC Diodes
Dual Diode
VRRM
(V)
Diode
Type
IF (A) TC =
100 ºC
VF (V) TJ =
25 ºC
Package
Anti-Parallel
Parallel
SOT-227
20
30
40
50
60
20
40
50
60
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
APT2X20DC60J
APT2X30DC60J
APT2X21DC60J
APT2X31DC60J
APT2X41DC60J
APT2X51DC60J
APT2X61DC60J
APT2X21DC120J
APT2X41DC120J
APT2X51DC120J
APT2X61DC120J
600
SiC
SiC
APT2X50DC60J
APT2X60DC60J
APT2X20DC120J
APT2X40DC120J
APT2X50DC120J
APT2X60DC120J
1200
Full Bridge
VRRM
(V)
Diode
Type
IF (A)
TC = 100 ºC
VF (V)
TJ = 25 ºC
Package
Part Number
40
40
10
20
20
40
40
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SP1
APTDC40H601G
APT40DC60HJ
APT10DC120HJ
APTDC20H1201G
APT20DC120HJ
APTDC40H1201G
APT40DC120HJ
600
SiC
SOT-227
SOT-227
SP1
SP1
1200
SiC
SOT-227
SP1
SOT-227
IGBT Power Modules with SiC Diodes
Boost Chopper
IGBT
VRRM (V)
ID (A)
TC = 80 ºC
VCE (on) (V)
at Rated IC
Package NTC
Part Number
Type
25
40
2.05
2.05
SOT-227
SOT-227
No
No
APT25GLQ120JCU2
APT40GLQ120JCU2
1200 Trench 4 Fast
Dual Chopper
SP3F
IGBT
VRRM (V)
ID (A)
TC = 80 ºC
VCE (on) (V)
at Rated IC
Package NTC
Part Number
Type
1200 Trench 4 Fast
40
2.05
SP3F Yes APTGLQ40DDA120CT3G
All Power Modules RoHS-compliant
33
Power Modules with SiC Schottky Diodes (continued)
MOSFETs and Super Junction MOSFET Power Modules with SiC Diodes
Single Switch + Series FRED and SiC Parallel Diodes
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
1000
1200
MOS 7
MOS 7
65
100
110
86
SP6
SP6
Option
Option
APTM100UM65SCAVG
APTM120U10SCAVG
SOT-227
Chopper
SP1
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Package
NTC
…DA… or U2
…SK… or U3
500
MOS 8
65
45
24
18
120
60
330
560
300
43
38
70
107
25
44
20
15
23
SOT-227
SOT-227
SP1
SP4
SOT-227
SP1
SOT-227
SOT-227
SP1
No
No
Yes
Yes
No
Yes
No
No
APT58M50JCU2
APT50N60JCCU2
Super Junction
MOSFET
600
APTC60SKM24CT1G
APTC60DAM18CTG
APT33N90JCCU2
APTC90DAM60CT1G
APT26M100JCU2
APT20M120JCU2
APTM120DA30CT1G
Super Junction
MOSFET
900
1000
1200
APTC90SKM60CT1G
APT26M100JCU3
APT20M120JCU3
MOS 8
MOS 8
SP3F
Yes
Phase Leg + Series FRED and SiC Parallel Diodes
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
38
24
35
24
18
67
110
54
70
107
44
21
32
43
49
SP4
SP6
SP4
SP4
SP6
SP4
SP4
SP4
SP6
SP6
Yes
No
Yes
Yes
No
Yes
Yes
Yes
No
APTM50AM38SCTG
APTM50AM24SCG
APTC60AM35SCTG
APTC60AM24SCTG
APTC60AM18SCG
APTC90AM60SCTG
APTC80A15SCTG
APTC80A10SCTG
APTC80AM75SCG
APTM100A13SCG
500
MOS 7
Super Junction
MOSFET
600
900
SP4
60
Super Junction
MOSFET
150
100
75
800
1000
MOS 7
130
No
Full Bridge + Series FRED and SiC Parallel Diodes
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package
NTC
Part Number
SP6
500
600
MOS 7
75
70
45
290
120
450
34
29
38
11
23
14
SP4
SP4
SP4
SP4
SP4
SP4
Yes
Yes
Yes
Yes
Yes
Yes
APTM50HM75SCTG
APTC60HM70SCTG
APTC60HM45SCTG
APTC80H29SCTG
APTC90H12SCTG
APTM100H45SCTG
Super Junction
MOSFET
800
900
1000
MOS 7
Triple Phase Leg
VDSS
(V)
MOSFET
Type
RDS (on)
(mΩ) TC = 80 ºC
ID (A)
Package NTC
Part Number
SP6-P
Super Junction
MOSFET
600
24
87
50
SP6-P
SP6-P
Yes APTC60TAM21SCTPAG
Yes APTM100TA35SCTPG
1000
MOS 7
350
34
SiC MOSFET Power Modules
T-Type Three-Level Inverter
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
Part Number
IGBT and SiC
MOSFET
110
40
20
50
SP3F
SP3F
Yes
Yes
APTMC120HR11CT3AG
APTMC120HRM40CT3AG
SOT-227
600/1200
Three-Level NPC Inverter
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
Part Number
110
55
14
20
40
160
SP3F
SP3F
SP6
Yes
Yes
No
APTMC60TL11CT3AG
APTMC60TLM55CT3AG
APTMC60TLM14CAG
600
SiC MOSFET
SP1
Phase Leg
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
Part Number
55
25
20
16
12
9
8
60
30
40
80
SP1
SP3F
SP1
D3
SP3F
SP3F
D3
Yes
Yes
Yes
No
Yes
Yes
No
APTMC120AM55CT1AG
APTMC120AM25CT3AG
APTMC120AM20CT1AG
APTMC120AM16CD3AG
APTMC120AM12CT3AG
APTMC120AM09CT3AG
APTMC120AM08CD3AG
APTMC170AM60CT1AG
APTMC170AM30CT1AG
108
102
150
200
200
40
1200
SiC MOSFET
SiC MOSFET
SP3F
SP1
SP1
Yes
Yes
1700
80
Phase Leg: Very Low Inductance Package
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
Part Number
SP6LI
6.7
4.2
2.5
2.1
7.5
210
307
475
586
207
SP6LI
SP6LI
SP6LI
SP6LI
SP6LI
Yes MSCMC120AM07CT6LIAG New!
Yes MSCMC120AM04CT6LIAG New!
Yes MSCMC120AM03CT6LIAG New!
Yes MSCMC120AM02CT6LIAG New!
Yes MSCMC170AM08CT6LIAG New!
1200
1700
SiC MOSFET
SiC MOSFET
Triple Phase Leg
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
Part Number
34
33
17
12
55
60
100
150
SP3F
SP6-P
SP6-P
SP6-P
Yes
Yes
Yes
Yes
APTMC120TAM34CT3AG
APTMC120TAM33CTPAG
APTMC120TAM17CTPAG
APTMC120TAM12CTPAG
SP6
1200
SiC MOSFET
Boost Chopper
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
Part Number
D3
34
17
50
100
SOT-227
SOT-227
No
No
APT50MC120JCU2
APT100MC120JCU2
1200
SiC MOSFET
Full Bridge
VCES
(V)
RDS (on)
(mΩ)
ID (A)
TC = 80 ºC
Technology
Package NTC
SP3F Yes
Part Number
1200
SiC MOSFET
17
110
APTMC120HM17CT3AG
SP6-P
35
Diode Power Modules
Single Diode
SOT-227
VRRM
(V)
Diode
Type
IF (A) TC = 80 ºC
VF (V) TC = 80 ºC
Package
200
400
500
500
450
430
400
1.1
1.5
1.8
2.3
2.5
APTDF500U20G
APTDF500U40G
APTDF450U60G
APTDF430U100G
APTDF400U120G
600
FRED
LP4
1000
1200
SP1
Single Diode
VRRM
(V)
Diode
Type
IF (A)
TC = 80 ºC
VF (V)
TJ = 25 ºC
Package
Part Number
40
90
1.3
1.3
SP1
SP1
APTDR40X1601G
APTDR90X1601G
1600
Rectifier
Full Bridge
VRRM
(V)
Diode
Type
IF (A)
TC = 80 ºC
VF (A)
TC = 80 ºC
LP4
Package
Part Number
30
60
1
SOT-227
SOT-227
SP4
APT30DF20HJ
APT60DF20HJ
200
600
1
100
30
1
APTDF100H20G
APTDF30H601G
APT30DF60HJ
1.8
1.8
1.8
1.8
1.6
1.6
1.6
2.1
2.1
2.1
2.6
2.6
1.6
2.4
1.8
1.8
2.2
2.2
1.3
1.3
SP1
30
SOT-227
SOT-227
SP1
SOT-227
SP1
SP6
60
APT60DF60HJ
60
APTDF60H601G
APT100DL60HJ
APTDF100H601G
APTDF200H60G
APT30DF100HJ
APTDF100H100G
APTDF200H100G
APTDF30H1201G
APTDF60H1201G
APT75DL120HJ
APTDF200H120G
APT50DF170HJ
APT75DF170HJ
APTDF100H170G
APTDF200H170G
APT40DR160HJ
APT90DR160HJ
100
100
200
30
FRED
SOT-227
SP4
1000
1200
100
200
30
60
75
200
50
75
SP6
SP4
SP1
SP1
SOT-227
SP6
SOT-227
SOT-227
SP4
SP6
SOT-227
SOT-227
1700
1600
100
200
40
RECTIFIER
90
Common Cathode–Common
Anode–Doubler
SP6
VRRM
(V)
Diode
Type
IF (A)
VF (V)
Package Common Cathode
Common Anode
Doubler
per Diode TJ = 25 ºC
200
600
1000
1200
1700
1
APTDF400KK20G
APTDF400KK60G
APTDF400KK100G
APTDF400KK120G
APTDF400KK170G
APTDF400AA20G
APTDF400AA60G
APTDF400AA100G
APTDF400AA120G
APTDF400AA170G
APTDF400AK20G
APTDF400AK60G
APTDF400AK100G
APTDF400AK120G
APTDF400AK170G
1.6
FRED
400
2.1
2.4
2.2
SP6
All Power Modules RoHS-compliant
36
Package Outlines
Pinout location depends on the module configuration. Please refer to the product datasheet for pin assignments. All dimensions in millimeters.
D3PAK
or TO-268
TO-220 [KF]
TO-220 3-Lead
TO-247 2-Lead
TO-264
Revised
8/29/97
C
a th o d e
TO-220 2-Lead
TO-247 3-Lead
T-MAX®
C
A
a th o d e
n o d e
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
264 MAX™
ISOTOP
or SOT-
Refer to web page for additional package outline drawings
ISOTOP® is a registered trademark of SGS Thomson
37
Power Module Outlines
Pinout location depends on the module configuration. Please refer to the product datasheet for pin assignments. All dimensions in millimeters.
D3PAK
D4
LP4
LP8
57,3 ā0,5
81 ā0,20
M
6
(4x)
70 ā0,20
SP1
SP2
21.6±±.2
4.3±±.ꢀ2
R2
42±±.ꢀ2
38
Power Module Outlines (continued)
Pinout location depends on the module configuration. Please refer to the product datasheet for pin assignments. All dimensions are in millimeters.
SP3F
SP4
SP6–Three Outputs
SP6–Four Outputs, Version 1
2,80 x 0,5
2,80
x 0,5
7,8 MAX
7,8 MAX
108
93
108
93
M
5
(4x)
13,50
7,50
13,50
7,50
14
0
0
7,50
7,50
14
13,50
13,50
Ø
6,40
12
(4x)
(4x)
Ø
6,40
(4x)
(4x)
Ø
Ø
12
28
27
28
28
48
48
48
SP6–Four Outputs, Version 2
SP6-P
2,80
x 0,5
7,8 MAX
108
93
18,20
12
13,50
7,50
5,10
0
7,50
13,50
17
Ø
6,40
(4x)
27
27
Ø
12
(4x)
48
48
39
Power Module Outlines (continued)
Pinout location depends on the module configuration. Please refer to the product datasheet for pin assignments. All dimensions are in millimeters.
SP6LI
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information and specifications, please call, email, or visit our website.
Toll-free: 800-713-4113
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Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace
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particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold
hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment
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