SS12-L [MICROSEMI]

Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN;
SS12-L
型号: SS12-L
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, Schottky, 1 Element, 1A, 80V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN

光电二极管
文件: 总3页 (文件大小:42K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
21201 Itasca St.  
SS12-L  
thru  
Chatsworth, CA 91311  
Phone: (818) 701-4933  
Fax: (818) 701-4939  
SS110-L  
Features  
Low Profile Package  
1 Amp Schottky  
Rectifier  
Guard Ring Protection  
Low Forward Voltage  
High Current Capability  
Extremely Low Thermal Resistance  
Low Leakage Available With Suffix TS01 (i.e. SS12-LTS01)  
20 - 100 Volts  
DO-214AC  
(SMAJ)  
Maximum Ratings  
Operating Temperature: -65°C to +125°C  
Storage Temperature: -65°C to +150°C  
Maximum Thermal Resistance; 13°C/W Junction To Lead  
H
Cathode Band  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
20V  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
Microsemi  
Part Number  
Device  
Marking  
J
SS12-L  
SS13-L  
SS14-L  
SS15-L  
SS16-L  
SS18-L  
SS110-L  
SS12  
SS13  
SS14  
SS15  
SS16  
SS18  
SS110  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
30V  
40V  
50V  
60V  
80V  
100V  
A
C
E
D
B
F
G
Electrical Characteristics @ 25°C Unless Otherwise Specified  
DIMENSIONS  
Average Forward  
Current  
IF(AV)  
1.0A  
TJ = 75°C  
INCHES  
MIN  
.078  
.081  
---  
MM  
MIN  
1.98  
2.06  
---  
---  
.76  
1.65  
4.93  
3.99  
2.57  
DIM  
A
B
C
D
E
F
G
H
J
MAX  
.095  
.087  
.005  
.02  
.060  
.084  
.228  
.177  
.110  
MAX  
2.42  
2.21  
.127  
.51  
NOTE  
1
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
---  
Maximum  
Instantaneous Forward  
Voltage  
.030  
.065  
.205  
.157  
.100  
1.52  
2.13  
5.79  
4.50  
2.79  
SS12-SS14  
SS15-SS16  
VF  
.55V  
.70V  
.85V  
IFM = 1.0A;  
TJ = 25°C*  
SS18-SS110  
Maximum DC Reverse  
Current At Rated DC  
Blocking Voltage  
-LTS01  
SUGGESTED SOLDER  
PAD LAYOUT  
IR  
0.5mA  
20mA  
0.3mA  
TA = 25°C  
TA = 100°C  
0.085”  
Typical Junction  
Capacitance  
SS12  
0.095”  
CJ  
230pF  
50pF  
Measured at  
1.0MHz, VR=4.0V  
SS13-SS110  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
0.075”  
SS12-L thru SS110-L  
Figure 1  
Typical Forward Characteristics  
20  
SS15-  
SS12-SS14  
10  
6
4
2
SS18-SS110  
1
.6  
.4  
Amps  
.2  
25°C  
.1  
.06  
.04  
.02  
.01  
.3  
.5  
1.3  
1.1  
.7  
.9  
Volts  
Instantaneous Forward Current - Amperes versus  
Instantaneous Forward Voltage - Volts  
Figure 2  
Junction Capacitance  
100  
60  
40  
20  
10  
TJ=25°C  
pF  
6
4
2
1
400  
1000  
.1  
.2  
.4  
1
2
10 20  
200  
100  
4
40  
Volts  
Junction Capacitance - pF versus  
Reverse Voltage - Volts  
SS12-L thru SS110-L  
Figure 4  
Figure 3  
Peak Forward Surge Current  
Forward Derating Curve  
60  
50  
1.2  
1.0  
.8  
40  
30  
20  
Amps  
.6  
Amps  
10  
0
.4  
80  
100  
1
6
60  
4
8 10 20  
Cycles  
40  
2
.2  
Single Phase, Half Wave  
60Hz Resistive or Inductive Load  
Peak Forward Surge Current - Amperes versus  
0
Number Of Cycles At 60Hz - Cycles  
50  
75  
100  
125  
150  
175  
0
°C  
Average Forward Rectified Current - Amperes versus  
Ambient Temperature - °C  
Figure 5  
New SMA Assembly  
Round Lead  

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