SLVG2.8K [MICROSEMI]

Trans Voltage Suppressor Diode, 2.8V V(RWM), Unidirectional, 1 Element, Silicon,;
SLVG2.8K
型号: SLVG2.8K
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 2.8V V(RWM), Unidirectional, 1 Element, Silicon,

光电二极管
文件: 总2页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SLVG2.8K  
UNIDIRECTIONAL TVSarray ™  
S C O T T S D A L E D I V I S I O N  
PRODUCT PREVIEW  
DESCRIPTION  
TVS arraySERIES  
Microsemi’s proprietary Zener process provides low standoff voltages and the  
lowest standby current in the industry of 0.1µA. This 4 pin unidirectional array is  
designed for use in applications where protection is required at the board level from  
voltage transients caused by electrostatic discharge (ESD) as defined by IEC 61000-  
4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary  
lighting.  
This product is designed to provide protection in the unidectional mode for 1 line  
by connecting the Input/Output line to pin 2 and 3 and pin 1 and 4 to ground. The  
SLVG2.8K product provides board level protection from static electricity and other  
induced-voltage surges that can damage sensitive circuitry.  
APPLICATIONS  
· EIA-RS232 data rates  
These Transient Voltage Suppressor (TVS) diode arrays protect 2.8 V low  
voltage components such as DRAM’s SRAM’s CMOS, HCMOS, HSIC, and low  
voltage interfaces. Because of the physical size, weight and protection capabilities,  
this product is ideal for use in but not limited to miniaturize electronic equipment  
such as hand held instruments, computers, computer peripherals and cell phones.  
19.6kbs  
· EIA-RS422 data rates  
10Mbs  
· EIA-RS423 data rates  
100kbs  
· 200 MHz maximum  
FEATURES  
PACKAGING  
·
·
·
·
Protects 2.8 V low voltage components  
Protects 1 unidirectional line to ground  
Unidirectional single line capacitance 50 pF  
LOW LEAKAGE 0.1 µA  
·
·
Tape & Reel per EIA Standard 481  
3,000 pieces per 7 inch reel  
MAXIMUM RATINGS  
MECHANICAL  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Peak Pulse current 24 Amps at 8/20 µS  
(FIGURE 2)  
·
·
·
Molded SOT-143 Surface Mount  
Weight .014 grams (approximate)  
Body Marked with device number  
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified  
STANDBY  
REVERSE  
STAND-OFF  
VOLTAGE  
VRWM  
SNAP-BACK  
VOLTAGE  
VSB  
PUNCH-THRU  
VOLTAGE  
VPT  
CLAMPING  
VOLTAGE  
VC  
CLAMPING  
VOLTAGE  
VC  
(LEAKAGE)  
CURRENT  
ID  
@ VRWM = 2.8V  
T = 25°C  
µA  
CAPACITANCE  
(f=1 MHz)  
@ 0V  
PART  
NUMBER  
DEVICE  
MARKING  
ISB = 50 mA  
@ 2 µA  
@ IPP= 1 Amp  
@ IPP= 5 Amp  
VOLTS  
MAX  
volts  
MIN  
VOLTS  
MIN  
VOLTS  
MAX  
VOLTS  
MAX  
pF  
MAX  
0.1  
MAX  
SLVG2.8K  
G2.8  
2.8  
2.8  
3.0  
4.1  
5.3  
50  
Copyright ã 2001  
MSCXXXX.PDF 02-08 2001 REV C  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
SLVG2.8K  
UNIDIRECTIONAL TVSarray ™  
S C O T T S D A L E D I V I S I O N  
PRODUCT PREVIEW  
SYMBOLS & DEFINITIONS  
Symbol  
DEFINITION  
Rated stand off voltage: Maximum dc voltage that can be applied over the operating temperature range.  
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected  
VWM  
VPT  
VSB  
Punch-Thru Voltage: The minimum voltage the device will exhibit at a specified current  
Snap-Back Voltage: The minumum snap-back voltage the device will exhibit at a specific current  
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a  
pulse time of 20 µs.  
Standby Current: Leakage current at VWM.  
VC  
ID  
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in Pico  
Farads.  
C
GRAPHS  
10000  
1000  
8/20 µs 400W Pulse  
100  
10  
100ns  
1µs  
10µs  
100µs  
1ms  
10ms  
FIGURE 1  
Peak Pulse Power Vs Pulse Time  
FIGURE 2  
Pulse Wave Form  
PACKAGING AND SCHEMAT I C  
INCHES  
MILLIMETERS  
DIM  
A
B
C
C1  
D
E
MIN  
.070  
.047  
.030  
.015  
.110  
.035  
.071  
.0006  
.003  
.018  
.083  
MAX  
.080  
.055  
.037  
.020  
.119  
.044  
.079  
.006  
.007  
.023  
.093  
MIN  
1.778  
1.194  
.762  
.381  
2.794  
.889  
1.803  
.015  
.076  
MAX  
2.032  
1.397  
.940  
.508  
3.023  
1.118  
2.007  
.152  
.178  
.584  
F
G
H
I
.457  
J
2.108  
2.362  
PAD DIMENSIONS  
INCHES MILLIMETERS  
SCHEMATIC  
DIM  
A
A1  
B
MIN  
.032  
.040  
---  
MAX  
.040  
.048  
.057  
.087  
.075  
.067  
.040  
.140  
MIN  
.813  
1.016  
---  
MAX  
1.016  
1.219  
1.448  
2.210  
1.905  
1.702  
1.016  
3.556  
C
D
E
G
---  
---  
.075  
.067  
.032  
.134  
1.905  
1.702  
.813  
3.404  
H
Copyright ã 2001  
MSCXXXX.PDF 02-08 2001 REV C  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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