SLVG2.8K [MICROSEMI]
Trans Voltage Suppressor Diode, 2.8V V(RWM), Unidirectional, 1 Element, Silicon,;![SLVG2.8K](http://pdffile.icpdf.com/pdf2/p00242/img/icpdf/SLVG2-8K_1463487_icpdf.jpg)
型号: | SLVG2.8K |
厂家: | ![]() |
描述: | Trans Voltage Suppressor Diode, 2.8V V(RWM), Unidirectional, 1 Element, Silicon, 光电二极管 |
文件: | 总2页 (文件大小:159K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SLVG2.8K
UNIDIRECTIONAL TVSarray ™
S C O T T S D A L E D I V I S I O N
PRODUCT PREVIEW
DESCRIPTION
TVS array™ SERIES
Microsemi’s proprietary Zener process provides low standoff voltages and the
lowest standby current in the industry of 0.1µA. This 4 pin unidirectional array is
designed for use in applications where protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined by IEC 61000-
4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary
lighting.
This product is designed to provide protection in the unidectional mode for 1 line
by connecting the Input/Output line to pin 2 and 3 and pin 1 and 4 to ground. The
SLVG2.8K product provides board level protection from static electricity and other
induced-voltage surges that can damage sensitive circuitry.
APPLICATIONS
· EIA-RS232 data rates
These Transient Voltage Suppressor (TVS) diode arrays protect 2.8 V low
voltage components such as DRAM’s SRAM’s CMOS, HCMOS, HSIC, and low
voltage interfaces. Because of the physical size, weight and protection capabilities,
this product is ideal for use in but not limited to miniaturize electronic equipment
such as hand held instruments, computers, computer peripherals and cell phones.
19.6kbs
· EIA-RS422 data rates
10Mbs
· EIA-RS423 data rates
100kbs
· 200 MHz maximum
FEATURES
PACKAGING
·
·
·
·
Protects 2.8 V low voltage components
Protects 1 unidirectional line to ground
Unidirectional single line capacitance 50 pF
LOW LEAKAGE 0.1 µA
·
·
Tape & Reel per EIA Standard 481
3,000 pieces per 7 inch reel
MAXIMUM RATINGS
MECHANICAL
·
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse current 24 Amps at 8/20 µS
(FIGURE 2)
·
·
·
Molded SOT-143 Surface Mount
Weight .014 grams (approximate)
Body Marked with device number
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
STANDBY
REVERSE
STAND-OFF
VOLTAGE
VRWM
SNAP-BACK
VOLTAGE
VSB
PUNCH-THRU
VOLTAGE
VPT
CLAMPING
VOLTAGE
VC
CLAMPING
VOLTAGE
VC
(LEAKAGE)
CURRENT
ID
@ VRWM = 2.8V
T = 25°C
µA
CAPACITANCE
(f=1 MHz)
@ 0V
PART
NUMBER
DEVICE
MARKING
ISB = 50 mA
@ 2 µA
@ IPP= 1 Amp
@ IPP= 5 Amp
VOLTS
MAX
volts
MIN
VOLTS
MIN
VOLTS
MAX
VOLTS
MAX
pF
MAX
0.1
MAX
SLVG2.8K
G2.8
2.8
2.8
3.0
4.1
5.3
50
Copyright ã 2001
MSCXXXX.PDF 02-08 2001 REV C
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SLVG2.8K
UNIDIRECTIONAL TVSarray ™
S C O T T S D A L E D I V I S I O N
PRODUCT PREVIEW
SYMBOLS & DEFINITIONS
Symbol
DEFINITION
Rated stand off voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected
VWM
VPT
VSB
Punch-Thru Voltage: The minimum voltage the device will exhibit at a specified current
Snap-Back Voltage: The minumum snap-back voltage the device will exhibit at a specific current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 µs.
Standby Current: Leakage current at VWM.
VC
ID
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in Pico
Farads.
C
GRAPHS
10000
1000
8/20 µs 400W Pulse
100
10
100ns
1µs
10µs
100µs
1ms
10ms
FIGURE 1
Peak Pulse Power Vs Pulse Time
FIGURE 2
Pulse Wave Form
PACKAGING AND SCHEMAT I C
INCHES
MILLIMETERS
DIM
A
B
C
C1
D
E
MIN
.070
.047
.030
.015
.110
.035
.071
.0006
.003
.018
.083
MAX
.080
.055
.037
.020
.119
.044
.079
.006
.007
.023
.093
MIN
1.778
1.194
.762
.381
2.794
.889
1.803
.015
.076
MAX
2.032
1.397
.940
.508
3.023
1.118
2.007
.152
.178
.584
F
G
H
I
.457
J
2.108
2.362
PAD DIMENSIONS
INCHES MILLIMETERS
SCHEMATIC
DIM
A
A1
B
MIN
.032
.040
---
MAX
.040
.048
.057
.087
.075
.067
.040
.140
MIN
.813
1.016
---
MAX
1.016
1.219
1.448
2.210
1.905
1.702
1.016
3.556
C
D
E
G
---
---
.075
.067
.032
.134
1.905
1.702
.813
3.404
H
Copyright ã 2001
MSCXXXX.PDF 02-08 2001 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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