MXPLAD7.5KP18AE3 [MICROSEMI]
Trans Voltage Suppressor Diode;
| 型号： | MXPLAD7.5KP18AE3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode |
| 文件： | 总6页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High-Reliability
screening available in
reference to
7.5 kW, Unidirectional and Bidirectional
Available
TVS Protection Device
MIL-PRF-19500
DESCRIPTION
These 7.5 kW rated transient voltage suppressors (TVS) in a surface mount PLAD package are provided
with design features to minimize thermal resistance and cumulative heating. These devices have the
ability to clamp dangerous high voltage, short term transients such as those produced by electrostatic
discharge, radiated RFI, inductive load dumps, and the secondary effects of lightning strikes before they
reach sensitive component regions of a circuit. Typical applications include lightning and automotive load
dump protection. They are particularly effective at meeting the multi-stroke lightning standard RTCA DO-
160, section 22 for aircraft design. The all-metal bottom of this space-efficient, low profile package
provides a very low thermal impedance path for heat to escape to the mounting substrate, keeping the
junction temperature low. The PLAD7.5KP is offered with standoff voltages (Vwm) from 10 to 48 volts in
either unidirectional or bidirectional versions. For more information on PLAD packaged products and our
broad range of TVS solutions, please see our website.
Tested in
accordance with the
requirements of
AEC-Q101
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
•
•
•
•
Available in both unidirectional and bidirectional construction (bidirectional with CA suffix)
High-reliable, with wafer fabrication and assembly lot traceability
All parts 100% surge tested
Low profile surface mount package
Optional upscreening is available with various screening and conformance inspection options based
on MIL-PRF-19500. Refer to Hi-Rel Non-Hermetic Products brochure on our web site for more
details on the screening options
mini-PLAD
(The cathode is the heatsink
under the body of this device.)
•
•
•
•
•
Suppresses transients up to 7,500 W @ 10/1000 μs (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020
3σ lot norm screening performed on standby current (ID)
RoHS compliant (2002/95/EC) devices available
Halogen free (IEC 61249-2-21)
APPLICATIONS / BENEFITS
•
•
•
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1,2,3,4,5: MPLAD7.5KP10A to 48CA
•
•
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1,2,3,4: MPLAD7.5KP10A to 48CA
Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance:
Class 2,3: MPLAD7.5KP10A to 48CA
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Class 4: MPLAD7.5KP10A to 26CA
•
•
Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 25 ºC)*:
Level 1,2,3,4,5: MPLAD7.5KP10A to 48CA
Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs at 25 ºC)*:
Level 1, 2, 3: MPLAD7.5KP10A to 48CA
Fax: (978) 689-0803
Level 4: MPLAD7.5KP10A to 14CA
MSC – Ireland
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•
•
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Longer transient pulse width capability if well heat sunk for automotive load dump
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
I
PP rating of 97 amps to 441 amps
VWM rating of 10 volts to 48 volts
V(BR)(min) range of 11.1 volts to 53.3 volts
VC(MAX) rating of 17 volts to 77.4 volts
Website:
*See MicroNote 132 for further temperature derating selection.
www.microsemi.com
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 1 of 6
MAXIMUM RATINGS @ 25 oC unless otherwise specified
Parameters/Test Conditions
Symbol
TJ and TSTG
RӨJA
Value
-55 to +150
50
Unit
ºC/W
ºC/W
ºC/W
W
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient (1)
Thermal Resistance Junction-to-Case
Peak Pulse Power @ 10/1000 µs (2)
RӨJC
1.5
PPP
7,500
<100
<5
Unidirectional
ps
tclamping (0 volts to V(BR) min)
Bidirectional
ns
Forward Clamping Voltage @ 400 Amps (3)
Forward Surge Current (3)
VFS
2.5
V
IFSM
500
A
Solder Temperature @ 10 s
Rated Average Power dissipation (5)
260
ºC
TA = 25 °C
PM(AV)
2.5 (1)
W
(4)
TC = 100 °C
33.3
W
Notes: 1. When mounted on FR4 PC board with recommended mounting pad (see pad layout).
2. Also see Figures 1 and 2. With impulse repetition rate (duty factor) of 0.05% or less.
3. At 8.3 ms half-sine wave (unidirectional devices only).
4. Case temperature controlled on heat sink as specified.
5. See MicroNote 134 for derating PPP when also applying steady-state power.
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Epoxy, meets UL94V-0
TERMINALS: Tin/lead or matte-tin (fully RoHS compliant) plating
MARKING: Part number
DELIVERY option: Tape and reel (13 inch)
See Package Dimensions on last page.
PART NOMENCLATURE
M PLAD 7.5K P 10 CA (e3)
Reliability Level*
RoHS Compliance
M
MA
MX
e3 = RoHS compliant
Blank = non-RoHS compliant
Polarity
MXL
*(see Hi-Rel Non-Hermetic
Product Portfolio)
A = Unidirectional
CA = Bidirectional
Reverse Standoff Voltage
Plastic
Package Designation
PPP Rating (W)
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 2 of 6
SYMBOLS & DEFINITIONS
Definition
Symbol
αV(BR)
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
I(BR)
ID
Breakdown Current: The current used for measuring Breakdown Voltage V(BR).
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
IPP
V(BR)
VC
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
VWM
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated
REVERSE
STAND-
OFF
VOLTAGE
VWM
BREAKDOWN
VOLTAGE V(BR)
MAXIMUM
CLAMPING
VOLTAGE
MAXIMUM
STANDBY
CURRENT
MAXIMUM PEAK
PULSE
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V(BR)
CURRENT
(FIG. 2)
DEVICE*
V(BR)
@
I(BR)
mA
VC @ IPP
Volts
ID @ VWM
IPP
αV(BR)
mV/°C
Volts
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
Volts
µA
Amps
441
412
377
349
323
307
288
272
257
231
211
193
178
165
155
141
129
116
108
103
97
MPLAD7.5KP10A(e3)
MPLAD7.5KP11A(e3)
MPLAD7.5KP12A(e3)
MPLAD7.5KP13A(e3)
MPLAD7.5KP14A(e3)
MPLAD7.5KP15A(e3)
MPLAD7.5KP16A(e3)
MPLAD7.5KP17A(e3)
MPLAD7.5KP18A(e3)
MPLAD7.5KP20A(e3)
MPLAD7.5KP22A(e3)
MPLAD7.5KP24A(e3)
MPLAD7.5KP26A(e3)
MPLAD7.5KP28A(e3)
MPLAD7.5KP30A(e3)
MPLAD7.5KP33A(e3)
MPLAD7.5KP36A(e3)
MPLAD7.5KP40A(e3)
MPLAD7.5KP43A(e3)
MPLAD7.5KP45A(e3)
MPLAD7.5KP48A(e3)
11.1 - 12.3
12.2 - 13.5
13.3 - 14.7
14.4 - 15.9
15.6 - 17.2
16.7 - 18.5
17.8 - 19.7
18.9 - 20.9
20.0 - 22.1
22.2 - 24.5
24.4 - 26.9
26.7 - 29.5
28.9 - 31.9
31.1 - 34.4
33.3 - 36.8
36.7 - 40.6
40.0 - 44.2
44.4 - 49.1
47.8 - 52.8
50.0 – 55.3
53.3 – 58.9
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.5
48.4
53.3
58.1
64.5
69.4
72.7
77.4
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
9
10
11
12
13
15
16
18
19
22
24
27
29
30
35
38
40
45
49
51
54
* See part nomenclature for additional screening prefixes.
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 3 of 6
GRAPHS
tp – Pulse Time – sec
FIGURE 1
Peak Pulse Power vs. Pulse Time
(to 50% of exponentially decaying pulse)
Test waveform parameters: tr = 10 µs, tp = 1000 µs
FIGURE 2
Pulse Waveform
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 4 of 6
GRAPHS (continued)
T Lead Temperature ºC
L
FIGURE 3
Derating Curve
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 5 of 6
PACKAGE DIMENSIONS
Dimensions
Ref.
Inch
Millimeters
Min
Max
Min
8.56
7.04
2.97
11.07
2.34
1.57
0.56
0.20
Max
A1
A2
B
C
D
G
H
J
0.337
0.277
0.117
0.436
0.092
0.062
0.022
0.008
0.353
0.293
0.133
0.452
0.108
0.078
0.038
0.012
8.97
7.44
3.38
11.48
2.74
1.98
0.96
0.30
PAD LAYOUT
Dimensions
Inch Millimeters
Ref.
Typical
0.353
0.117
0.078
0.033
Typical
8.97
2.97
1.98
0.84
A
B
C
D
RF01084, Rev B (24/6/15)
©2015 Microsemi Corporation
Page 6 of 6
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