MXP4KE160ATR [MICROSEMI]
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN;型号: | MXP4KE160ATR |
厂家: | Microsemi |
描述: | Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN |
文件: | 总4页 (文件大小:373K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
- High Reliability controlled devices
- Economical series for thru hole mounting
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 5.8 to 342 V standoff voltages (VWM)
- Fast response
400W Transient Voltage Suppressor
LEVELS
M, MA, MX, MXL
DEVICES
MP4KE6.8A thru MP4KE400CA, e3
FEATURES
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500
Refer to MicroNote 129 for more details on the screening options.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
.
.
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
.
.
.
.
.
Suppresses transients up to 400 watts @ 10/1000 s (see Figure 1)
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF
DO-41 (DO-204AL)
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
o
o
o
Class 1: MP4KE5.0A to MP4KE91CA
Class 2: MP4KE5.0A to MP4KE47ACA
Class 3: MP4KE5.0A to MP4KE24CA
Class 4: MP4KE5.0A to MP4KE12CA
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
o
Class 1: MP4KE5.0A to MP4KE30CA
Class 2: MP4KE5.0A to MP4KE15CA
MAXIMUM RATINGS
.
.
Operating and Storage Temperature: -65 °C to +150 °C
Peak Pulse Power: 400 Watts at 10/1000 s (see Figures 1, 2 and 3 for tW, waveform and
derating effects) with impulse repetition rate (duty factor) of 0.01 % or less
.
.
Thermal Resistance: 50 °C /W junction to leads @ 3/8 inch (10 mm) from body, or 110 C/W
junction to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track
width 1 mm, length 25 mm
Steady-State Power: 2.5 Watts @ TL=25 C at 3/8 inch (10 mm) from body, or 1.13 W at TA =
25 ºC on FR4 PC board described for thermal resistance
.
.
Forward Voltage at 25 C: 3.5 V @ 30 A with 8.3 ms half-sine wave (unidirectional only
Solder temperatures: 260 C for 10 s (maximum)
RF01006 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
.
.
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per
MIL-STD-750, method 2026
.
.
.
.
.
Body marked with part number
Cathode indicated by band. No cathode band on bi-directional devices.
Available in bulk or custom tape-and-reel packaging
TAPE-AND-REEL standard per EIA-296 (add “TR” suffix to part number)
Weight: 0.3 gram (approximately)
PACKAGE DIMENSIONS
NOTE: Cathode indicated by band.
All dimensions in millimeters (inches)
SYMBOLS & DEFINITIONS
Symbol
VWM
PPP
Definition
Symbol
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
IPP
VC
Peak Pulse Current
Clamping Voltage
Breakdown Current for VBR
VBR
ID
IBR
RF01006 Rev A, June 2010
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25oC
REVERSE
STAND-
OFF
VOLTAGE
VWM
BREAKDOWN VOLTAGE
VBR @ IBR
MAXIMUM
CLAMPING
VOLTAGE
VC@ IPP
MAXIMUM
STANDBY
CURRENT
ID @ VWM
PEAK PULSE
CURRENT
(see Fig. 2)
IPP
MAXIMUM
TEMPERATURE
COEFFICIENT
of VBR
MICROSEMI
PART NUMBER
(Note 2)
V(BR)
V
VMIN
6.45
7.13
VMAX
7.14
7.88
mA
10
10
V
A
% / °C
.057
.061
A
500
200
MP4KE6.8A
MP4KE7.5A
5.80
6.40
10.5
11.3
38
35
MP4KE8.2A
MP4KE9.1A
7.02
7.78
7.79
8.65
8.61
9.55
10
1
12.1
13.4
100
20
33
30
.065
.068
MP4KE10A
MP4KE11A
8.55
9.40
9.50
10.5
10.5
11.6
1
1
14.5
15.6
5
2
28
26
.073
.075
MP4KE12A
MP4KE13A
10.2
11.1
11.4
12.4
12.6
13.7
1
1
16.7
18.2
1
1
24
22
.078
.081
MP4KE15A
MP4KE16A
12.8
13.6
14.3
15.2
15.8
16.8
1
1
21.2
22.5
1
1
19
18
.084
.086
MP4KE18A
MP4KE20A
15.3
17.1
17.1
19.0
18.0
21.0
1
1
25.2
27.7
1
1
16
14.5
.088
.090
MP4KE22A
MP4KE24A
18.8
20.5
20.9
22.8
23.1
25.2
1
1
30.6
33.2
1
1
13
12
.092
.094
MP4KE27A
MP4KE30A
23.1
25.6
25.7
28.5
28.4
31.5
1
1
37.5
41.4
1
1
11
9.5
.096
.097
MP4KE33A
MP4KE36A
28.2
30.8
31.4
34.2
34.7
37.8
1
1
45.7
49.9
1
1
9.0
8.0
.098
.099
MP4KE39A
MP4KE43A
33.3
36.8
37.1
40.9
41.0
45.2
1
1
53.9
59.3
1
1
7.5
7.0
.100
.101
MP4KE47A
MP4KE51A
40.2
43.6
44.7
48.5
49.4
53.6
1
1
64.8
70.1
1
1
6.2
5.7
.101
.102
MP4KE56A
MP4KE62A
47.8
53.0
53.2
58.9
58.8
65.1
1
1
77.0
85.0
1
1
5.2
4.7
.103
.104
MP4KE68A
MP4KE75A
58.1
64.1
64.6
71.3
71.4
78.8
1
1
92.0
103.0
1
1
4.4
3.9
.104
.105
MP4KE82A
MP4KE91A
70.1
77.8
77.9
86.5
86.1
95.5
1
1
113.0
125.0
1
1
3.5
3.2
.105
.106
MP4KE100A
MP4KE110A
85.5
94.0
95.0
105.0
105.0
116.0
1
1
137.0
152.0
1
1
2.9
2.6
.106
.107
MP4KE120A
MP4KE130A
102.0
111.0
114.0
124.0
126.0
137.0
1
1
165.0
179.0
1
1
2.4
2.2
.107
.107
MP4KE150A
MP4KE160A
128.0
136.0
143.0
152.0
158.0
168.0
1
1
207.0
219.0
1
1
1.95
1.8
.108
.108
MP4KE170A
MP4KE180A
145.0
154.0
162.0
171.0
179.0
189.0
1
1
234.0
246.0
1
1
1.7
1.6
.108
.108
MP4KE200A
MP4KE220A
171.0
185.0
190.0
209.0
210.0
231.0
1
1
274.0
328.0
1
1
1.5
1.0
.108
.110
MP4KE250A
MP4KE300A
214.0
256.0
237.0
285.0
263.0
315.0
1
1
344.0
414.0
1
1
1.0
1.0
.110
.110
MP4KE350A
MP4KE400A
300.0
342.0
333.0
380.0
368.0
420.0
1
1
482.0
548.0
1
1
1.0
1.0
.110
.110
NOTE 1:
NOTE 2:
Forward Voltage (Vf) @ 30 amps peak, 8.3 ms sine wave equal to 3.5 volts maximum for
MP4KE6.8A TO 200A (excluding bidirectional).
For bidirectional construction, indicate a CA suffix after part number, e.g. MP4KE170CA.
Bidirectional capacitance is half that shown in Figure 4 at zero volts.
RF01006 Rev A, June 2010
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS
FIGURE 1 Peak Pulse Power vs. Pulse Time
Test waveform parameters: tr=10 s, tp=1000 s
FIGURE 2 Pulse Waveform for Exponential Surge
Lead or Ambient Temperature oC
V(BR) - Breakdown Voltage – Volts
FIGURE 3 Derating Curve
FIGURE 4 MP4KE Typical Capacitance vs.
Breakdown Voltage (Unipolar)
RF01006 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
相关型号:
MXP4KE160ATRE3
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE160C
Trans Voltage Suppressor Diode, 400W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE160CA
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE160CAE3/TR
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE160CATRE3
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE160CE3TR
Trans Voltage Suppressor Diode, 400W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE160E3TR
Trans Voltage Suppressor Diode, 400W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE16ATRE3
Trans Voltage Suppressor Diode, 400W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE16CA
Trans Voltage Suppressor Diode, 400W, 13.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
MICROSEMI
MXP4KE16CAE3
Trans Voltage Suppressor Diode, 400W, 13.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明