MX043J [MICROSEMI]
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET; 抗辐射SEGR性的N-沟道增强型功率MOSFET
| 型号： | MX043J |
| 厂家： | 
Microsemi |
| 描述： | RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MX043J
MX043G
Features
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·
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·
·
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Harris FSC260R die
200 Volts
44 Amps
50 mW
total dose: 100 kRAD(Si) within pre-radiation parameter limits
dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical
dose rate: 2 x 1012 RAD(Si)/sec @ ID £ IDM typical
neutron: 1013 neutrons/cm2 within pre-radiation parameter limits
photocurrent: 17 nA/RAD(Si)/sec typical
rated Safe Operating Area Curve for Single event Effects
rugged polysilicon gate cell structure with ultrafast body diode
low inductance surface mount power package available with “ J-leads”
(MX043J) or “ gullwing-leads” (MX043G)
RADIATION
HARDENED
SEGR-RESISTANT
N-CHANNEL
·
·
very low thermal resistance
reverse polarity available upon request add suffix “ R” st
ENHANCEMENT
MODE
Maximum Ratings @ 25°C (unless otherwise
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ³ 25°C
BVDSS
200
Volts
Drain-to-Gate Breakdown Voltage @ TJ ³ 25°C, RGS= 1 MW
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
BVDGR
VGS
VGSM
ID25
ID100
IDM
200
+/-20
+/-30
44
28
132
44
tbd
tbd
300
Volts
Volts
Volts
Amps
Continuous Drain Current
Tj= 25°C
Tj= 100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Weight
Amps
Amps
mJ
mJ
Watts
°C
IAR
EAR
EAS
PD
Tj
Tstg
IS
ISM
qJC
-
-55 to +125
-55 to +125
44
°C
Amps
Amps
°C/W
grams
132
0.25
SINGLE EVENT
EFFECTS
SAFE
Ion Species
typical LET (MeV/mg/cm)
VGS
-20V
-5V
-10V
-15V
-20V
VDSmax
200V
200V
160V
100V
40V
typical range (m)
Ni
Br
Br
Br
Br
26
37
37
37
37
43
36
36
36
36
OPERATING
AREA
(SEESOA)
Notes
(1) Pulse test, t £ 300 m s, duty cycle d £ 2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0857
MX043J
MX043G
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
Drain-to-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 1 mA
200
V
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
DBVDSS/DTJ
tbd
V/°C
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA,
TJ = 25°C
TJ = 125°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
1.5
0.5
-
4.0
-
5.0
±100
±200
25
250
0.050
0.093
V
V
V
Gate-to-Source Leakage Current
VGS = ± 20 VDC, VDS = 0
nA
IGSS
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
VDS =0.8·BVDSS
VGS = 0 V
VGS= 12V, ID= 28A
ID= 25A
mA
mA
W
W
IDSS
RDS(on)
0.043
-
Forward Transconductance (1)
gfs
VDS ³ 10 V; ID = 50 A
26
32
S
Input Capacitance
C
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
4400
900
280
pF
iss
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
C
rss
Td(on)
tr
VGS = 12 V, VDS = 100 V,
ID = 44 A, RG = 2.35 W
40
95
ns
Turn-off Delay Time
Fall Time
td(off)
tf
100
25
Total Gate Charge
Qg(on)
Qgs
Qgd
VSD
VGS = 12 V, VDS = 100V, ID = 44 A
160
30
83
-
180
38
93
nC
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
IF = IS, VGS = 0 V
0.6
1.8
V
trr
IF = 10 A, -di/dt = 100 A/ms, TJ =25 °C
560
ns
MReecverhseaRneciocvearylTOimeu(Btolidny Deiode)
ShelFit™
100% KND (Known-Good-Die) SCREENING
a. 100% die probe at Tambient= 25°C for BVDSS, VGSth, IDSS, IGSS, VSD, RDSon
b. 100% Visual Inspection i.a.w. method 2072 of MIL-STD-750
DIE ELEMENT EVALUATION
a. Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM
b. Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD-750 at VGSpeak= 15 V, L= 100mH, IAS= 132 A
c. Gate Stress Test for 250 ms at VGS= 30 Vdc.
d. Safe Operating Area i.a.w. method 3474 of MIL-STD-750 at VDS= 160 V, ID= 2.8 A for 10 ms
e. High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 48 hrs at Tambient= 150°C, Drain shorted to Source and
VGS= 16 V
f. High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 240 hrs at Tambient= 150°C, Gate shorted to Source
and VDS= 160 V
g. Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C
h. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55°C to +150°C
i. Group A Electrical Testing including dynamic parameters
j. Steady State Operational Life Bias i.a.w. method 1042 cond.A of MIL-STD-750: 1000 hrs at Tambient= 150°C, Gate shorted to Source
and VDS= 160 V
k. Final DC Electrical Testing at Tambient= 25°C, 125°C and -55°C
l. Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750
m. Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750
RADIATION EVALUATION
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V
Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation.
100% SCREENING
a. Internal Visual (Precap) Inspection i.a.w. method 2069 and 2072 of MIL-STD-750
b. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 10 cycles, -55°C to +125°C
c. Thermal Response i.a.w. method 3161 of MIL-STD-750
d. High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 24 hrs at Tambient= 125°C, Drain shorted to Source and
VGS= 16 V
e. High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 24 hrs at Tambient= 125°C, Gate shorted to Source and
VDS= 160 V
f. Final electrical Testing i.a.w. this data sheet (100% DC parameters @ 25°C and sample (22/0) testing for dynamic parameters and
DC parameters @ temperature extremes)
QUALIFICATION INSPECTION
a. Thermal Resistance i.a.w. method 3161 of MIL-STD-750 - sample size= 10 devices/0 rejects
b. Solderability i.a.w. method 2026 of MIL-STD-750 - sample size= 10 devices/0 rejects
c. Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 200 cycles, -55°C to +125°C - sample size 10 devices/0 rejects
d. Intermittent Operation Life i.a.w. method 1042D of MIL-STD-750 with DTj= 75°C for 2000 cycles (monitoring thermal response
shift) - sample= 25 devices/0 rejects
e. Steady State Operation Life i.a.w. method 1042A of MIL-STD-750 at Tj= 115°C min. for 1000 hrs - sample= 25 devices/0 rejects
f. Steady state Gate Life i.a.w. method 1042B of MIL-STD-750 at Tj= 115°C min. for 1000 hrs. - sample= 25 devices/0 rejects
g. Safe Operating Area i.a.w. method 3474 of MIL-STD-750 (monitoring thermal response shift) - sample size= 10 devices/0 rejects
h. Shock i.a.w. method 2016 of MIL-STD-750 - sample size= 10 devices/0 rejects
i. Vibration i.a.w. method 2056 of MIL-STD-750 - sample size= 10 devices/0 rejects
j. Acceleration i.a.w. method 2006 of MIL-STD-750 - sample size= 10 devices/0 rejects
k. X-ray, one view of the die attach area (Oz axis) - sample= 10 devices/0 rejects
l. Humidity ????? - sample size= 5 devices/0 rejects
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