MSCD200-18 [MICROSEMI]

Rectifier Diode, 1 Phase, 2 Element, 200A, 1800V V(RRM), Silicon, CASE D2, 3 PIN;
MSCD200-18
型号: MSCD200-18
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, 1 Phase, 2 Element, 200A, 1800V V(RRM), Silicon, CASE D2, 3 PIN

局域网 二极管
文件: 总3页 (文件大小:140K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MSKD200 ; MSAD200 ; MSCD200  
Glass Passivated Rectifier  
Diode Modules  
VRRM 800 to 1800V  
IFAV 200 Amp  
Applications  
y
y
y
Non-controllable rectifiers for AC/AC  
converters  
Line rectifiers for transistorized AC motor  
controllers  
Field supply for DC motors  
Circuit  
Features  
y
Blocking voltage:800 to 1800V  
Heat transfer through aluminum oxide ceramic  
isolated metal baseplate  
y
y
y
Glass passivated chip  
UL E243882 approved  
Module Type  
TYPE  
VRRM  
800V  
1200V  
1600V  
1800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MSCD200-08  
MSCD200-12  
MSCD200-16  
MSCD200-18  
MSAD200-08  
MSAD200-12  
MSAD200-16  
MSAD200-18  
MSKD200-08  
MSKD200-12  
MSKD200-16  
MSKD200-18  
Maximum Ratings  
Symbol  
Conditions  
Values  
200  
Units  
Single phase ,half wave 180°conduction Tc=95℃  
Single phase ,half wave 180°conduction Tc=102℃  
t=10mS Tvj =45℃  
A
IFAV  
IF(RMS)  
IFSM  
i2t  
240  
A
6800  
A
A2s  
V
t=10mS Tvj =45℃  
231200  
3000  
a.c.50HZ;r.m.s.;1min  
Visol  
Tvj  
-40 to 150  
-40 to 125  
5±15%  
5±15%  
160  
Nm  
Nm  
g
Tstg  
Mt  
To terminals(M6)  
Ms  
To heatsink(M6)  
Weight  
Module (Approximately)  
Thermal Characteristics  
Symbol  
Conditions  
Values  
0.18  
Units  
/W  
Per diode  
Rth(j-c)  
Rth(c-s)  
Module  
0.05  
/W  
Electrical Characteristics  
Symbol  
Values  
Min. Typ. Max.  
Conditions  
Units  
T=25IF =300A  
Tvj=150VRD=VRRM  
1.18  
1.30  
9
V
VFM  
IRD  
mA  
MSKD200_MSAD200_MSCD200 - Rev2  
Oct, 2011  
www.microsemi.com  
1/3  
MSKD200 ; MSAD200 ; MSCD200  
Performance Curves  
350  
W
250  
DC  
A
sin.180  
DC  
rec.120  
rec.60  
sin.180  
200  
rec.120  
rec.30  
150  
rec.60  
175  
100  
rec.30  
50  
ID  
0
Pvtot  
0
0 ID  
140  
A 280  
0
Tc  
50  
100  
150  
Fig2.Forward Current Derating Curve  
Fig1. Power dissipation  
0.3  
8000  
A
50HZ  
/ W  
Zth(j-C)  
0.15  
4000  
0
0
1
10  
cycles 100  
0.001  
0.01  
0.1  
1.0  
10  
S 100  
Fig4. Max Non-Repetitive Forward Surge  
Current  
Fig3. Transient thermal impedance  
400  
A
300  
200  
typ.  
max.  
100  
25℃  
- - -125℃  
IF  
0
0
VF 0.5  
1.0  
1.5  
V 2.0  
Fig5. Forward Characteristics  
MSKD200_MSAD200_MSCD200 - Rev2  
Oct, 2011  
www.microsemi.com  
2/3  
MSKD200 ; MSAD200 ; MSCD200  
Package Outline Information  
CASE: D2  
Dimensions in mm  
MSKD200_MSAD200_MSCD200 - Rev2  
Oct, 2011  
www.microsemi.com  
3/3  

相关型号:

MSCD200B

Glass Passivated Rectifier Diode Modules
ETC

MSCD200B-08

Glass Passivated Rectifier Diode Modules
ETC

MSCD200B-12

Glass Passivated Rectifier Diode Modules
ETC

MSCD200B-16

Rectifier Diode, 200A, 1600V V(RRM),
MICROSEMI

MSCD200B-18

Glass Passivated Rectifier Diode Modules
ETC

MSCD202

2 AMP Surface Mount Schottky Barrier Rectifiers
SECOS

MSCD202H

Schottky Barrier Diode
ZOWIE

MSCD204

2 AMP Surface Mount Schottky Barrier Rectifiers
SECOS

MSCD204H

Schottky Barrier Diode
ZOWIE

MSCD250

Rectifier Diode Modules
ETC

MSCD250-08

Rectifier Diode Modules
ETC

MSCD250-12

Rectifier Diode Modules
ETC