MP61006 [MICROSEMI]
GaAs PIN DIODES; 的GaAs PIN二极管
| 型号： | MP61006 |
| 厂家： | 
Microsemi |
| 描述： | GaAs PIN DIODES |
| 文件： | 总2页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs PIN DIODES
®
MP61001 – MP61012
TM
Packaged and Bondable Chips
Features
●
Low Series Resistance
●
Fast Switching Speed
●
Low Capacitance
●
No Reverse Bias Required
●
Available in Packages and Bondable Chips
Available as Chip-on-Board Components
●
Applications
●
Switches
Description
●
Attenuators
Microsemi’s GaAs PIN diodes are fabricated
utilizing a gold contact mesa and protected with
silicon nitride. The diodes have short carrier lifetime
for fast switching speed and low series resistance.
GaAs P00 diodes are available as bondable
chips, chip-on-board components and in a variety
of packages.
GaAs PIN diodes, in comparison to Si PIN diodes,
reach its high impedance state at zero bias and do
not require reverse bias for low loss. Nanosecond
switching speed is achieved with GaAs PIN diodes,
●
Phase Shifters
Maximum Ratings
Reverse
Voltage
Breakdown
50 mA 25°C
+20 dBm 25°C
Voltage
Forward Current
Incident Power
@
@
Operating
Temperature
-55°C to +175°C
-55°C to +200°C
Storage emperature
T
using low-cost
TTL drivers.
Microsemi
Copyright 2008
Rev: 2009-05-11
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GaAs PIN DIODES
®
MP61001 – MP61012
TM
GaAs PIN Diodes (Packaged and Bondable Chips)
Gallium Arsenide PIN Diodes (Specifications
@ 25°C)
Min.
Breakdown
oltage
Max.
Resistance
20 mA2
Nominal
Max.
-10 V1
(pf)
Switching
Speed
(ns)
Nominal
Carrier Lifetime3
(ns)
CJ
@
V
@
Part Number
MP61001
MP61002
MP61003
MP61004
MP61005
MP61006
MP61007
MP61008
MP61009
MP61010
MP61011
MP61012
(V)
200
200
200
100
100
100
75
()
0.03
0.04
0.05
0.06
0.07
0.08
0.10
0.12
0.15
0.18
0.23
0.35
3.0
3.0
3.0
2.0
2.0
2.0
2.0
2.0
1.0
1.0
0.8
0.8
20.0
20.0
20.0
9.0
50
50
50
15
15
15
10
10
5
9.0
9.0
6.0
75
6.0
50
3.5
50
3.5
5
50
3.5
5
50
3.5
5
1 Capacitance is specified at
1
MHz.
2 Resistance is specified at
1 GHz.
3 Carrier lifetime is inferred from stored charge measurement at 10 mA.
Note:
GaAs PIN diode chips have
a minimum bonding area diameter of 50 microns.
Typical Characteristics
Microsemi
Copyright 2008
Rev: 2009-05-11
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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