MMAD1106E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional, 8 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOIC-14;
| 型号： | MMAD1106E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 75V V(RWM), Unidirectional, 8 Element, Silicon, ROHS COMPLIANT, PLASTIC, SOIC-14 局域网 测试 光电二极管 |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMAD1106 and MMAD1106e3
Switching Diode Array
Steering Diode TVS Array™
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 14-pin package for use as
steering diodes protecting up to eight I/O ports from negative ESD, EFT, or
surge by directing them to ground (pin 14)*. They may also be used in fast
switching core-driver applications. This includes computers and peripheral
equipment such as magnetic cores, thin-film memories, plated-wire
memories, etc., as well as decoding or encoding applications. These arrays
offer many advantages of integrated circuits such as high-density packaging
and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete
packages that may not be as user friendly in PC board mounting. They are
available with either Tin-Lead plating terminations or as RoHS Compliant
with annealed matte-Tin finish by adding an “e3” suffix to the part number.
*See MMAD1105(e3) for directing positive transients to positive side of the
power supply line.
Top Viewing Pin Layout
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
8 Diode Array
Molded 14-Pin SOIC Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
•
Low capacitance steering diode protection for high
frequency data lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I / O Ports
LAN
•
•
•
•
RoHS Compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
•
Switching Core Drivers
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
Solder Temperatures: 260°C for 10 s (maximum)
•
•
•
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0 flammability
classification
TERMINALS: Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-
STD-750 method 2026
MARKING: MSC logo, MMAD1106 or
MMAD1106e3 and date code. Pin #1 is to the left
of the dot or indent on top of package
WEIGHT: 0.127 grams (approximate)
Tape & Reel packaging: 2500 pcs (STANDARD)
•
•
•
•
•
•
Carrier tube packaging: 55 pcs
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
BREAKDOWN
VOLTAGE
VBR
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
LEAKAGE
CURRENT
IR
LEAKAGE
CURRENT
IR
CAPACITANCE
REVERSE
RECOVERY
TIME
FORWARD
VOLTAGE
VF
FORWARD
VOLTAGE
VF
C
@ 0 V
@ IBR =100µA
TA = 25°C
TA = 150°C
trr
IF = 10 mA
IF = 100 mA
PART
NUMBER
V
V
µA
µA
pF
ns
V
V
MIN
MAX
75
MAX
0.200
@VR
20
MAX
300
@VR
20
TYP
MAX
MAX
MAX
MMAD1106
MMAD1106e3
90
1.5
5.0
1.00
1.20
Copyright © 2005
6-28-2005 REV K
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
MMAD1106 and MMAD1106e3
Switching Diode Array
Steering Diode TVS Array™
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
VBR
VRWM
VF
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
C
OUTLINE AND CIRCUIT
INCHES
MILLIMETERS
DIM
A
MIN
0.336
MAX
0.344
MIN
8.53
MAX
8.74
B
0.150
0.158
3.81
4.01
C
D
F
0.053
0.011
0.016
0.069
0.021
0.050
1.35
0.28
0.41
1.75
0.53
1.27
G
J
K
L
P
0.050 BSC
01.27 BSC
0.006
0.004
0.189
0.228
0.010
0.008
0.206
0.244
0.15
0.10
4.80
5.79
0.25
0.20
5.23
6.19
OUTLINE
CIRCUIT CONFIGURATION
PAD LAYOUT
Copyright © 2005
6-28-2005 REV K
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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