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MM118-06L [MICROSEMI]

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE; 3相N沟道绝缘栅双极晶体管IGBT桥
MM118-06L
型号： MM118-06L
厂家： Microsemi    Microsemi
描述：

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
3相N沟道绝缘栅双极晶体管IGBT桥

晶体 晶体管 电动机控制 瞄准线 双极性晶体管 栅 局域网
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2830 S. Fairview St.  
Santa Ana, CA 92704  
PH: (714) 979-8220  
FAX: (714) 966-5256  
MM118-XX  
SERIES  
Features  
·
Available in Low Conduction Loss Class as MM118-xxL or Fast  
Switching Class as MM118-xxF  
Compact and rugged construction offering weight and space savings  
Available with PC board solderable pins (see mechanical outline below)  
or threaded terminals (add “T” suffix to part number, see option below)  
HPM (Hermetic Power Module)  
Isolation voltage capability (in reference to the base) in excess of 3kV  
Very low thermal resistance  
Thermally matched construction provides excellent temperature and  
power cycling capability  
600 / 1200 Volts  
150 Amps  
3 PHASE N-CHANNEL  
INSULATED GATE  
BIPOLAR  
·
·
·
·
·
·
TRANSISTOR (IGBT)  
BRIDGE  
·
Additional voltage ratings or terminations available upon request  
Maximum Ratings per switch @ 25°C (unless otherwise specified)  
PART NUMBER  
SYMBOL  
MM118-06  
MM118-12  
Collector-to-Emitter Breakdown Voltage (Gate shorted to  
BVCES  
600 V  
1200 V  
Emitter), @ Tj³ 25°C  
BVCGR  
600 V  
1200 V  
Collector-to-Gate Breakdown Voltage @ Tj³ 25°C, RGS= 1  
MW  
Gate-to-Emitter Voltage  
continuous  
transient  
VGES  
VGEM  
IC25  
+/- 20 V  
+/- 30 V  
60 A  
+/- 20 V  
+/- 30 V  
52 A  
Continuous Collector Current  
Tj=  
IC90  
32 A  
33 A  
25°C  
Tj= 90°C  
Peak Collector Current, pulsewidth limited by Tj max  
Power Dissipation  
ICM  
PD  
120 A  
165 W  
104 A  
165 W  
Thermal resistance, junction to base  
per switch  
RQjc, max  
0.75°C/W  
0.75°C/W  
Mechanical Outline  
Datasheet# MSC0321A  
MM-XX SERIES  
Maximum Ratings @ 25°C (unless otherwise specified) - continued  
DESCRIPTION  
SYMBOL  
MM118-06  
MM118-12  
Short Circuit Reverse Current (RBSOA) @ Tj= 125°C, VCE= 0.8 x VCES  
Junction and Storage Temperature Range (°C)  
Continuous Source Current (parallel Diode)  
Imax  
Tj, Tstg  
IS  
64 A  
66 A  
-55 to +150 -55 to +150  
60 A  
50 A  
Pulse Source Current (parallel Diode)  
ISM  
100 A  
100 A  
Electrical Parameters, per switch @ 25°C (unless otherwise specified)  
SYMBOL  
PART  
MIN  
TYP.  
MAX  
UNIT  
DESCRIPTION  
Collector-to-Emitter Breakdown Voltage  
(Gate Shorted to Emitter)  
CONDITIONS  
VGS = 0 V, IC = 250 mA  
BVCES  
MM118-06  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
600  
1200  
2.5  
4
V
Gate Threshold Voltage  
VGE(th)  
4
5.0  
7
6.5  
±100  
±200  
200  
V
VCE = VGE, IC = 250 mA  
VCE = VGE, IC = 2.5 mA  
VCE = VGE, IC = 350 mA  
VGE = ± 20VDC, VCE = 0  
4.5  
5.5  
Gate-to-Emitter Leakage Current  
(ALL)  
nA  
mA  
V
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 25°C  
TJ = 25°C  
TJ = 125°C  
IGES  
ICES  
Collector-to-Emitter Leakage Current  
(Zero Gate Voltage Collector Current)  
Collector-to-Emitter Saturation Voltage  
(1)  
(ALL)  
VCE =0.8·BVCES  
VGE = 0 V  
VGE= 15V, IC= 30A  
IC= 60A  
IC= 30A  
IC= 30A  
VGE= 15V, IC= 25A  
IC= 50A  
1000  
MM118-06F  
MM118-06F  
MM118-06F  
MM018-06L  
MM118-12  
MM118-12  
MM118-12  
2.2  
3.5  
2.2  
2.2  
2.7  
3.4  
3.3  
2.9  
tbd  
tbd  
2.5  
3.2  
tbd  
3.9  
VCE(sat)  
IC= 25A  
Forward Transconductance (1)  
gfs  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
15  
7
8.5  
20  
13  
20  
2500  
2760  
1650  
230  
240  
250  
70  
S
VCE ³ 10 V; IC = 30 A  
VCE ³ 10 V; IC = 30 A  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Cies  
Coes  
Cres  
VGE = 0 V, VCE = 25 V, f = 1 MHz  
tbd  
tbd  
2200  
tbd  
tbd  
380  
tbd  
pF  
51  
110  
tbd  
160  
INDUCTIVE LOAD, Tj= 25°C (2,3)  
Turn-on Delay Time  
td(on)  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
25  
60  
75  
30  
130  
65  
3.6  
175  
400  
420  
125  
400  
45  
1.3  
5
2.4  
tbd  
tbd  
110  
tbd  
tbd  
100  
-
tbd  
tbd  
560  
175  
tbd  
60  
-
ns  
ns  
ns  
ns  
ns  
ns  
mJ  
ns  
ns  
ns  
ns  
ns  
ns  
mJ  
mJ  
mJ  
VGE = 15 V, L= 100 mH note 2, 3  
for MM118-06: VCE = 480 V,  
IC = 30 A, RG = 4.7 W  
for MM118-12: VCE= 600 V,  
IC= 25 A, RG = 47 W  
Rise Time  
tri  
On Energy  
Turn-off Delay Time  
Eon  
td(off)  
Fall Time  
Off Energy  
tfi  
Eoff  
-
-
Datasheet# MSC0321A  
INDUCTIVE LOAD, Tj= 125°C (2,3)  
Turn-on Delay Time  
td(on)  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06F  
MM118-06L  
MM118-12  
MM118-06  
MM118-06  
MM118-06  
MM118-06  
MM118-12  
MM118-12  
25  
60  
95  
35  
130  
90  
1
4.2  
10  
250  
540  
420  
260  
600  
45  
4
12  
4.2  
125  
110  
160  
23  
34  
20  
50  
47  
75  
-
tbd  
tbd  
tbd  
tbd  
tbd  
tbd  
-
ns  
ns  
ns  
ns  
ns  
ns  
mJ  
mJ  
mJ  
ns  
ns  
ns  
ns  
ns  
ns  
mJ  
mJ  
mJ  
nC  
VGE = 15 V, L= 100 mH note 2, 3  
for MM118-06: VCE = 480 V,  
IC = 30 A, RG = 4.7 W  
for MM118-12: VCE= 600 V,  
IC= 25 A, RG = 47 W  
Rise Time  
tri  
On Energy  
Eon  
td(off)  
tfi  
Turn-off Delay Time  
Fall Time  
-
-
tbd  
1000  
tbd  
tbd  
1500  
tbd  
-
Off Energy  
Eoff  
Qg  
-
-
Total Gate Charge  
VGE = 15 V,  
for MM118-06: VCE = 300V, IC= 30 A  
for MM118-12: VCE= 600 V, IC= 25 A  
150  
150  
tbd  
35  
45  
tbd  
75  
63  
tbd  
1.5  
-
Gate-to-Emitter Charge  
Gate-to-Collector (Miller) Charge  
Qge  
Qgc  
VF  
Antiparallel diode forward voltage (1)  
V
IE= 15 A  
IE= 30 A  
IE= 50 A  
IE= 15 A  
IE= 10 A  
IE= 10 A  
TJ = 25 °C  
TJ = 25 °C  
TJ = 25 °C  
TJ = 150 °C  
TJ = 25 °C  
TJ = 100 °C  
1.7  
1.9  
-
2.4  
2
-
1.3  
3
-
Antiparallel diode reverse recovery time  
Antiparallel diode reverse recovery charge  
Antiparallel diode peak recovery current  
trr  
MM118-06  
MM118-06  
MM118-12  
MM118-12  
-
140  
-
100  
-
tbd  
-
ns  
nC  
A
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C  
IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C  
60  
Qrr  
MM118-06  
MM118-06  
MM118-12  
MM118-12  
160  
320  
tbd  
800  
IRM  
MM118-06  
MM118-06  
MM118-12  
MM118-12  
3
4.2  
tbd  
22  
Notes  
(1) Pulse test, t £ 300 ms, duty cycle d £ 2%  
(2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures.  
(3) switching losses include “tail” losses  
(4) Microsemi does not manufacture the igbt die; contact Microsemi for details.  

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