MAD1106_05 [MICROSEMI]
Switching Diode Array Steering Diode TVS ArrayTM; 开关二极管阵列转向二极管TVS ArrayTM
| 型号： | MAD1106_05 |
| 厂家： | 
Microsemi |
| 描述： | Switching Diode Array Steering Diode TVS ArrayTM |
| 文件： | 总2页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAD1106 and MAD1106e3
Switching Diode Array
Steering Diode TVS Array™
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 14-pin package
for use as steering diodes protecting up to eight I/O ports from negative
ESD, EFT, or surge by directing them to ground (pin 14)*. They may also
be used in fast switching core-driver applications. This includes computers
and peripheral equipment such as magnetic cores, thin-film memories,
plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-
density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of
various discrete packages that may not be as user friendly in PC board
mounting. They are available with either Tin-Lead plating terminations or
as RoHS Compliant with annealed matte-Tin finish by adding an “e3” suffix
to the part number.
*See MMAD1105(e3) for directing positive transients to positive side of
the power supply line.
Top Viewing Pin Layout
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
8 Diode Array
• Low capacitance steering diode protection for high
frequency data lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I / O Ports
• LAN
Molded 14-Pin Dual-In-Line Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
RoHS Compliant devices available by adding “e3” suffix
IEC 61000-4 compatible
• Switching Core Drivers
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20 µs)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (PD): 1500 mW (total)
Solder temperatures: 260°C for 10 s (maximum)
• CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0 flammability
classification
• TERMINALS: Tin-Lead or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750 method 2026
• MARKING: MSC logo, MAD1106 or MAD1106e3 and
date code. Pin #1 is to the left of the dot or indent on
top of package.
•
•
•
• WEIGHT: 0.997 grams (approximate)
• Carrier tubes: 25 pcs (Standard)
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
BREAKDOWN
VOLTAGE
VBR
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
LEAKAGE
CURRENT
IR
LEAKAGE
CURRENT
IR
CAPACITANCE
REVERSE
RECOVERY
TIME
FORWARD
VOLTAGE
VF
FORWARD
VOLTAGE
VF
C
@ 0 V
@ IBR =100µA
TA = 25°C
TA = 150°C
trr
IF = 10 mA
IF = 100 mA
PART
NUMBER
V
V
µA
µA
pF
ns
V
V
MIN
MAX
75
MAX
0.200
@VR
20
MAX
300
@VR
20
TYP
MAX
MAX
MAX
MAD1106
MAD1106e3
90
1.5
5.0
1.00
1.20
Copyright © 2005
6-28-2005 REV L
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
MAD1106 and MAD1106e3
Switching Diode Array
Steering Diode TVS Array™
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
VBR
VRWM
VF
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
C
OUTLINE AND CIRCUIT
INCHES
MILLIMETERS
DIM
A
MIN
MAX
0.780
MIN
18.80
5.969
3.048
6.858
8.128
MAX
19.81
0.740
0.235
0.120
0.270
0.320
B
0.265
6.731
C
0.140
3.556
D
0.330
8.382
E
0.380
9.652
F
0.100 BSC
0.021
2.540 BSC
0.533
G
H
I
0.015
0.017
0.140
0.381
0.431
3.556
0.023
0.584
0.160
4.064
CIRCUIT CONFIGURATION
OUTLINE
Copyright © 2005
6-28-2005 REV L
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
MAD1108-LF
Trans Voltage Suppressor Diode, 50V V(RWM), Unidirectional, 8 Element, Silicon, ROHS AND REACH COMPLIANT, PLASTIC, DIP-16
PROTEC
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