LL647-1 [MICROSEMI]
Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-213AA, GLASS, MELF-2;
| 型号： | LL647-1 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.4A, 400V V(RRM), Silicon, DO-213AA, GLASS, MELF-2 二极管 |
| 文件： | 总3页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N645 to 649
or
Silicon Rectifier Diodes
DO-35 Glass Package
1N645-1 to 649-1
Use Advantages
Used as a general purpose rectifier in power supplies, or for clipping and
steering applications.
High performance alternative to small signal diodes where space does not
permit use of power rectifiers.
May be used in hostile environments where hermeticity and reliability are
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.
Available up to JANTXV-1 level.
"S" level screening capability to Source Control Drawings.
Features
DO -35 G lass Package
Six Sigma quality
Lead Dia.
0.018-0.022"
0.458-0.558 mm
Humidity proof glass
Metallurgicallybonded
Thermally matched system
No thermal fatigue
High surge capability
Dia.
0.06-0.09"
1.0"
25.4 m m
(M in.)
Length
0.120-.200"
3.05-5.08- mm
1.53-2.28 mm
Sigma Bond™ plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
Absolute Maximum Ratings
Symbol
Ptot
Value
600
Unit
mWatts
mAmps
oC
Power Dissipation at 3/8" from the body, TL= 75 oC
AverageForwardRectifiedCurrentatTL = 75 oC
OperatingandStorageTemperatureRange
ThermalImpedance
IAV
400
TO&S
ZqJX
-65 to 175
35
oC/W
Detail Specifications
Breakdown
Voltage
(MIN.)
@ 100µA
(BV)
Maximum
Average Rectified Current
_______________
Forward
Voltage
Drop
Maximum
Maximum
Surge
Current Capacitance
Typical
Junction
Reverse
Voltage
Reverse Leakage Current
_______________
(IR) @ VR
(IO)
(IO)
(VF) @ IF = 400mA
(IFSM
)
@ -12V
(CO)
(VR)
25° C
150° C (MIN.)
(MAX.) 25° C
100° C
(NOTE 1)
Type
Volts
Volts
Amps
Amps
Volts
µA
µA
Amps
pF
1N645,-1
1N646,-1
1N647,-1
1N648,-1
1N649,-1
225
300
400
500
600
275
360
480
600
720
0.4
0.4
0.4
0.4
0.4
0.15
0.15
0.15
0.15
0.15
1.0
1.0
1.0
1.0
1.0
0.2
0.2
0.2
0.2
0.2
15
15
20
20
25
3
3
3
3
3
9
9
9
9
9
Note 1: Surge Current @TA = +25° C to +150° C, for 1 Second
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
1N645-1
thru
Silicon Rectifier Diodes
DO-35 Glass Package
1N649-1
DO-35 DERATING (175 C Tj)
D O -35 POWER D ER ATIN G C U R VE
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
180
T em perature ( 3/8" from body) C
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
1N645-1
thru
Silicon Rectifier Diodes
DO-35 Glass Package
1N649-1
Silicon Rectifier Diodes
1N645-1 thru 1N649-1
1 N 6 4 5 - 64 9 R ec tifie r D io d e s
Typic al Ir V r = P IV ; Ta = +150 C
1N 649-1
6.9
6.7
1N 648
6.5
6.3
6.1
5.9
5.7
5.5
5.3
5.1
4.9
4.7
4.5
1N 647-1
1N 646
1N 645-1
200
300
400
500
600
V r - V olts
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
相关型号：
LL649
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
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