JANTX2N3634L [MICROSEMI]
PNP SILICON AMPLIFIER TRANSISTOR; PNP硅晶体管放大器
| 型号： | JANTX2N3634L |
| 厂家： | 
Microsemi |
| 描述： | PNP SILICON AMPLIFIER TRANSISTOR |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/ 357
Devices
Qualified Level
JAN
2N3634
2N3635
2N3636
2N3637
JANTX
2N3634L
2N3635L
2N3636L
2N3637L
JANTXV
JANS
MAXIMUM RATINGS
Ratings
2N3634* 2N3636*
2N3635* 2N3637*
Symbol
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
140
175
Vdc
Vdc
Vdc
Adc
VCEO
VCBO
VEBO
IC
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
140
175
5.0
1.0
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
1.0
5.0
W
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/0C for TA > +250C
TO-5*
2N3634, 2N3635
2N3636, 2N3637
2) Derate linearly 28.6 mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
140
175
Vdc
2N3634, 2N3635
2N3636, 2N3637
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 100 Vdc
VCB = 140 Vdc
hAdc
mAdc
ICBO
100
10
2N3634, 2N3635
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
VEB = 5.0 Vdc
hAdc
mAdc
IEBO
50
10
Collector-Emitter Cutoff Current
VCE = 100 Vdc
10
ICEO
mAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
2N3634, 2N3636
25
45
50
50
30
hFE
150
300
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 50 mAdc, IB = 5.0 mAdc
2N3635, 2N3637
55
90
100
100
60
hFE
0.3
0.6
VCE(sat)
Vdc
Vdc
0.8
0.9
VBE(sat)
0.65
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz
2N3634, 2N3636
2N3635, 2N3637
½hfe½
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
40
80
160
320
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
2N3634, 2N3636
2N3635, 2N3637
hfe
hje
Small-Signal Short-Circuit Input Impedance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
W
W
100
200
600
1200
2N3634, 2N3636
2N3635, 2N3637
Small-Signal Open-Circuit Output Admittance
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz
Output Capacitance
VCB = 20 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
hoe
Cobo
Cibo
ms
pF
pF
200
10
75
VEB = 1.0 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
Noise Figure
5.0
3.0
3.0
VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0 W
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF
dB
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 100 Vdc, IC = 30 mAdc
VCE = 130 Vdc, IC = 20 mAdc
2N3634, 2N3635
2N3636, 2N3637
Test 2
VCE = 50 Vdc, IC = 95 mAdc
Test 3
VCE = 5.0 Vdc, IC = 1.0 Adc
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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