JANTX2N2906AUA [MICROSEMI]
PNP SMALL SIGNAL SILICON TRANSISTOR; PNP小信号硅晶体管型号: | JANTX2N2906AUA |
厂家: | Microsemi |
描述: | PNP SMALL SIGNAL SILICON TRANSISTOR |
文件: | 总2页 (文件大小:62K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 291
Devices
2N2906A
Qualified Level
JAN
2N2907A
2N2906AL
2N2906AUA
2N2906AUB
2N2907AL
2N2907AUA
2N2907AUB
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Symbol
VCEO
All Types Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
Vdc
60
Vdc
Vdc
VCBO
TO-18* (TO-206AA)
5.0
600
VEBO
mAdc
IC
Total Power Dissipation
@ TA = +250C
@ TC = +250C
0.4
1.8
W
W
0C
(1)
PT
(2 / 3)
4 PIN*
2N2906AUA, 2N2907AUA
PT
TJ, T
Operating & Storage Junction Temperature Range
-65 to +200
stg
1) Derate linearly 2.28 mW/0C for TA > +250C.
2) Derate linearly 10.3 mW/0C for TC > +250C.
3) For UA and UB surface mount case outlines: PT = 1.16 W;
derate linearly 6.6mW/0C for TC > +250C.
3 PIN*
2N2906AUB, 2N2907AUB
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
60
Vdc
V(BR)
CEO
Collector-Base Cutoff Current
VCE = 50 Vdc
VCE = 60 Vdc
Collector-Base Cutoff Current
VCE = 50 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
mAdc
hAdc
ICBO
ICES
IEBO
10
10
50
hAdc
hAdc
mAdc
50
10
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2906A, 2N2907A JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (4)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
40
75
40
100
40
100
40
100
40
50
IC = 0.1 mAdc, VCE = 10 Vdc
2N2906A. UA, UB
2N2907A, UA, UB
2N2906A. UA, UB
2N2907A, UA, UB
2N2906A. UA, UB
2N2907A, UA, UB
2N2906A. UA, UB
2N2907A, UA, UB
2N2906A. UA, UB
2N2907A, UA, UB
175
450
hFE
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
120
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
0.4
1.6
Vdc
Vdc
VCE(sat)
0.6
1.3
2.6
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
40
100
VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz
2N2906A,UA, UB
2N2907A,UA, UB
hfe
Magnitude of Small-Signal Forward Current Transfer Ratio
VCE = 20 Vdc, IC = 20 mAdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
½hfe½
Cobo
2.0
8.0
30
pF
pF
Cibo
VEB = 2.0 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 50 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = -IB2 = 50 mAdc
(4) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
ton
hs
hs
45
toff
300
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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