JANTX1N6674R [MICROSEMI]
Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN;
| 型号： | JANTX1N6674R |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 15A, Silicon, TO-254AA, HERMETIC, TO-254, 3 PIN 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总1页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/617
DEVICES
LEVELS
JAN
JANTX
JANTXV
1N6672
1N6673
1N6674
1N6672R
1N6673R
1N6674R
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
1N6672, R
1N6673, R
1N6674, R
300
400
500
Peak Repetitive Reverse Voltage
VRWM
Vdc
Average Forward Current (1)
Peak Surge Forward Current
TC = +100°C
IF
15
150
2.0
Adc
IFSM
Rθjc
A(pk)
°C/W
TO-254
Thermal Resistance - Junction to Case
Note:
(1) Derate @ 150mA/°C above TC = 100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
1N6672, R
1N6673, R
1N6674, R
300
400
500
Breakdown Voltage (2)
IR = 500µAdc
• 1
• 2
• 3
VBR
Vdc
1N6672, 1N6673, 1N6674
Forward Voltage (2)
IF = 10A (pk)
IF = 20A (pk)
VF1
VF2
1.35
1.55
Vdc
Reverse Leakage Current (2)
VR = 240V
VR = 320V
1N6672, R
1N6673, R
1N6674, R
IR1
50
5
µAdc
VR = 400V
• 1
• 2
• 3
Reverse Leakage Current (2)
VR = 240V, TC = +100°C
VR = 320V, TC = +100°C
VR = 400V, TC = +100°C
1N6672R, 1N6673R, 1N6674R
1N6672, R
1N6673, R
1N6674, R
IR2
mAdc
Reverse Recovery Time
IF = 0.5A, IR = 1A, IRR = 0.25A
trr
35
nS
pF
Junction Capacitance
VR = 10Vdc, f = 1.0MHz,
CJ
150
Vsig = 50mV (p-p) (max)
Note:
(2) Pulse Test; 300µS, duty cycle ≤ 2%
T4-LDS-0020 Rev. 1 (072046)
Page 1 of 1
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