JANSM2N3700 [MICROSEMI]

Small Signal Bipolar Transistor,;


型号：	JANSM2N3700
厂家：	Microsemi
描述：	Small Signal Bipolar Transistor,
文件：	总7页 (文件大小：274K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

JANS_2N3700

Qualified Levels:

JANSM, JANSD,

JANSP, JANSL,

JANSR and JANSF

RADIATION HARDENED LOW POWER

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/391

DESCRIPTION

This NPN leaded metal device is RAD hard qualified for high-reliability applications. Microsemi

also offers numerous other products to meet higher and lower power voltage regulation

applications.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

•

JEDEC registered 2N3700.

RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options).

TO-18 (TO-206AA)

Package

Also available in:

UB package

(leaded)

APPLICATIONS / BENEFITS

JANS_2N3700UB

•

Leaded TO-18 package.

Lightweight.

TO-39 (TO-205AD)

(leaded)

JANS_2N3019, 2N3019S

Low power.

Military and other high-reliability applications.

TO-46 (TO-206AB)

(leaded)

JANS_2N3057A

MAXIMUM RATINGS @ T_A= +25 ^oC unless otherwise noted.

Parameters/Test Conditions

Junction and Storage Temperature

Thermal Impedance Junction-to-Ambient

Thermal Impedance Junction-to-Case

Collector-Emitter Voltage

Symbol

T_Jand T_STG

R_ӨJA

Value

-65 to +200

325

Unit

^oC

^oC/W

R_ӨJC

150

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

V_CEO

Collector-Base Voltage

V_CBO

140

Emitter-Base Voltage

V_EBO

7.0

Collector Current

I_C

1.0

Fax: (978) 689-0803

Total Power Dissipation:

@ T_A= +25 ^oC ⁽¹⁾

@ T_C= +25 ^oC ⁽²⁾

P_D

0.5

1.0

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Notes: 1. Derate linearly 2.85 mW/°C for T_A≥ +25 °C.

2. Derate linearly 10.3 mW/°C for T_C≥ +25 °C.

Website:

www.microsemi.com

T4-LDS-0263, Rev. 1 (120784)

Page 1 of 7

JANS_2N3700

MECHANICAL and PACKAGING

CASE: Hermetically sealed, nickel plated kovar base, nickel cap.

•

TERMINALS: Gold plate over nickel kovar.

MARKING: Part number, date code, manufacturer’s ID, and serial number.

WEIGHT: Approximately 0.3 grams.

See Package Dimensions on last page.

PART NOMENCLATURE

JANSM

2N3700

Reliability Level

JANSM = 3K Rads (Si)

JANSD = 10K Rads (Si)

JANSP = 30K Rads (Si)

JANSL = 50K Rads (Si)

JANSR = 100K Rads (Si)

JANSF = 300K Rads (Si)

JEDEC type number

SYMBOLS & DEFINITIONS

Definition

Symbol

frequency

Base current (dc)

I_B

Emitter current (dc)

I_E

T_A

Ambient temperature

Case temperature

T_C

V_CB

V_CE

V_EB

Collector to base voltage (dc)

Collector to emitter voltage (dc)

Emitter to base voltage (dc)

T4-LDS-0263, Rev. 1 (120784)

Page 2 of 7

JANS_2N3700

ELECTRICAL CHARACTERISTICS @ T_A= +25 °C, unless otherwise noted

Parameters / Test Conditions

OFF CHARACTERISTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Current

I_C= 30 mA

V_(BR)CEO

I_CBO

I_EBO1

I_CES

Collector-Base Cutoff Current

V_CB= 140 V

µA

ηA

Emitter-Base Cutoff Current

V_EB= 7 V

Collector-Emitter Cutoff Current

V_CE= 90 V

Emitter-Base Cutoff Current

V_EB= 5.0 V

ON CHARACTERISTICS ⁽¹⁾

I_EBO2

Forward-Current Transfer Ratio

I_C= 150 mA, V_CE= 10 V

I_C= 0.1 mA, V_CE= 10 V

I_C= 10 mA, V_CE= 10 V

I_C= 500 mA, V_CE= 10 V

I_C= 1.0 A, V_CE= 10 V

100

300

h_FE

300

Collector-Emitter Saturation Voltage

I_C= 150 mA, I_B= 15 mA

I_C= 500 mA, I_B= 50 mA

0.2

0.5

V_CE(sat)

Base-Emitter Saturation Voltage

I_C= 150 mA, I_B= 15 mA

V_BE(sat)

1.1

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 1.0 mA, V_CE= 5.0 V, f = 1.0 kHz

400

h_fe

Magnitude of Small-Signal Short-Circuit Forward Current

Transfer Ratio

5.0

|h_fe|

I_C= 50 mA, V_CE= 10 V, f = 20 MHz

Output Capacitance

C_obo

C_ibo

V_CB= 10 V, I_E= 0, 100 kHz ≤ f ≤ 1.0 MHz

Input Capacitance

V_EB= 0.5 V, I_C= 0, 100 kHz ≤ f ≤ 1.0 MHz

(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.

T4-LDS-0263, Rev. 1 (120784)

Page 3 of 7

JANS_2N3700

ELECTRICAL CHARACTERISTICS @ T_A= +25 °C, unless otherwise noted (continued)

SAFE OPERATION AREA (See SOA graph below and MIL-STD-750, method 3053)

DC Tests

T_C= 25 °C, 1 cycle, t = 10 ms

Test 1

V_CE= 10 V

2N3700

I_C= 180 mA

Test 2

2N3700

V_CE= 40 V

I_C= 45 mA

Test 3

V_CE= 80 V

2N3700

I_C= 22.5 mA

V_CE– COLLECTOR – EMITTER VOLTAGE – V

Maximum Safe Operating Area

T4-LDS-0263, Rev. 1 (120784)

Page 4 of 7

JANS_2N3700

ELECTRICAL CHARACTERISTICS @ T_A= +25 °C, unless otherwise noted (continued)

POST RADIATION ELECTRICAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Collector to Base Cutoff Current

V_CB= 140 V

I_CBO

µA

Emitter to Base Cutoff Current

V_EB= 7 V

I_EBO

V_(BR)CEO

I_CES

µA

Collector to Emitter Breakdown Voltage

I_C= 30 mA

Collector-Emitter Cutoff Current

V_CE= 90 V

ηA

Emitter-Base Cutoff Current

V_EB= 5.0 V

Forward-Current Transfer Ratio ⁽²⁾

I_C= 150 mA, V_CE= 10 V

I_EBO

[50]

[25]

[45]

[25]

[7.5]

300

I_C= 0.1 mA, V_CE= 10 V

I_C= 10 mA, V_CE= 10 V

I_C= 500 mA, V_CE= 10 V

[h_FE]

300

I_C= 1 A, V_CE= 10 V

Collector-Emitter Saturation Voltage

I_C= 150 mA, I_B= 15 mA

I_C= 500 mA, I_B= 50 mA

Base-Emitter Saturation Voltage

I_C= 150 mA, I_B= 15 mA

V_CE(sat)

0.23

0.58

V_BE(sat)

1.27

(2) See method 1019 of MIL-STD-750 for how to determine [h_FE] by first calculating the delta (1/h_FE) from the pre- and post-

radiation h_FE. Notice the [h_FE] is not the same as h_FEand cannot be measured directly. The [h_FE] value can never exceed

the pre-radiation minimum h_FEthat it is based upon.

T4-LDS-0263, Rev. 1 (120784)

Page 5 of 7

JANS_2N3700

GRAPHS

T_A(^oC) Ambient

FIGURE 1

Temperature-Power Derating (R_ӨJA

)

Leads = .125 inch (3.175mm)

T_C(^oC) Case at base

FIGURE 2

Temperature-Power Derating (R_ӨJC

)

T4-LDS-0263, Rev. 1 (120784)

Page 6 of 7

JANS_2N3700

PACKAGE DIMENSIONS

Dimensions

Millimeters

Symbol

Inch

Min

.178

.170

.209

Note

Max

.195

.210

.230

Min

4.52

4.32

5.31

Max

4.95

5.33

5.84

.100 TP

2.54 TP

.016

.500

.016

.021

.750

.019

.050

0.41

12.70 19.05

0.41

0.53

7,8

0.48

1.27

.250

.100

6.35

2.54

.030

.048

.046

.010

0.76

1.22

1.17

0.25

3,4

.028

.036

0.71

0.91

45° TP

1, 2, 9, 11, 12

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)

radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by

direct methods or by the gauge and gauging procedure shown in figure 2.

7. Dimension LU applies between L₁and L₂. Dimension LD applies between L₂and LL minimum. Diameter is uncontrolled in L₁

and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

T4-LDS-0263, Rev. 1 (120784)

Page 7 of 7

JANSM2N3700 [MICROSEMI]

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