JANSM2N3440 [MICROSEMI]
Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN;
| 型号： | JANSM2N3440 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN |
| 文件： | 总5页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
RADIATION HARDENED
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/368
DEVICES
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
2N3439
2N3439L
2N3439UA
2N3440
2N3440L
2N3440UA
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3439 2N3440 Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
350
450
250
300
Vdc
Vdc
Vdc
Adc
Collector-Base Voltage
Emitter-Base Voltage
7.0
1.0
Collector Current
(1)
(2)
Total Power Dissipation
@ TA = +25°C
@ TC = +25°C
0.8
5.0
2.0
PT
W
UA
@ TSP = +25°C (3)
TO-5
2N3439L, 2N3440L
Operating & Storage Temperature Range
Top , Tstg
-65 to +200
°C
NOTES:
1) Derate linearly @ 4.57mW/°C for TA > +25°C
2) Derate linearly @ 28.5mW/°C for TC > +25°C
3) Derate linearly @ 14mW/°C for TSP > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
350
250
IC = 10mAdc
BB1 = 470Ω;VBB1 = 6V
2N3439 / L / UA
2N3440 / L / UA
V(BR)CEO
Vdc
R
L = 25mH (min); f = 30 – 60Hz
Collector-Emitter Cutoff Current
VCE = 300Vdc
TO-39 (TO-205AD)
2N3439, 2N3440
2.0
2.0
ICEO
µAdc
2N3439 / L / UA
2N3440 / L / UA
V
CE = 200Vdc
Emitter-Base Cutoff Current
VEB = 7.0Vdc
Collector-Emitter Cutoff Current
IEBO
ICEX
10
µAdc
µAdc
5.0
5.0
VCE = 450Vdc, VBE = -1.5Vdc
2N3439 / L / UA
2N3440 / L / UA
V
CE = 300Vdc, VBE = -1.5Vdc
Collector-Base Cutoff Current
VCB = 360Vdc
VCB = 250Vdc
2.0
2.0
5.0
5.0
2N3439 / L / UA
2N3440 / L / UA
2N3439 / L / UA
2N3440 / L / UA
UA
ICBO
µAdc
2N3439UA, 2N3440UA
V
V
CB = 450Vdc
CB = 300Vdc
T4-LDS-0134 Rev. 2 (110088)
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 20mAdc, VCE = 10Vdc
IC = 2.0mAdc, VCE = 10Vdc
IC = 0.2mAdc, VCE = 10Vdc
40
30
10
160
hFE
Collector-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc
VCE(sat)
0.5
1.3
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
|hfe|
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz
3.0
15
Forward Current Transfer Ratio
IC = 5.0mAdc, VCE = 10V, f = 1.0kHz
hfe
25
Output Capacitance
Cobo
Cibo
10
75
pF
pF
V
CB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
V
CB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc
ton
1.0
µs
Turn-Off Time
VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc
toff
10
µs
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
V
CE = 5.0Vdc, IC = 1.0Adc
Both Types
Test 2
V
CE = 350Vdc, IC = 14mAdc
2N3439 / L / UA
Test 3
V
CE = 250Vdc, IC = 20mAdc
2N3440 / L / UA
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0134 Rev. 2 (110088)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitter Cutoff Current
ICEO
VCE = 300Vdc
VCE = 200Vdc
2N3439 / L / UA
2N3440 / L / UA
4
4
µAdc
µAdc
Emitter-Base Cutoff Current
IEBO
20
V
EB = 7.0Vdc
Collector-Emitter Cutoff Current
VCE = 450Vdc, VBE = -1.5Vdc
2N3439 / L / UA
2N3440 / L / UA
10
10
ICEX
µAdc
µAdc
V
CE = 300Vdc, VBE = -1.5Vdc
Collector-Base Cutoff Current
VCB = 360Vdc
2N3439 / L / UA
2N3440 / L / UA
2N3439 / L / UA
2N3440 / L / UA
4
4
10
10
V
CB = 250Vdc
VCB = 450Vdc
CB = 300Vdc
ICBO
V
Forward-Current Transfer Ratio
IC = 20mAdc, VCE = 10Vdc
[20]
[15]
[5]
160
[hFE]
IC = 2.0mAdc, VCE = 10Vdc
IC = 0.2mAdc, VCE = 10Vdc
Collector-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc
VCE(sat)
0.56
1.5
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 50mAdc, IB = 4.0mAdc
VBE(sat)
T4-LDS-0134 Rev. 2 (110088)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Millimeters
Symbol
Inches
Note
6
Min
.305
.240
.335
Max
Min
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L1
.335
.260
.370
7.75
6.10
8.51
.200 TP
5.08 TP
7
8,9
.016
.019
0.41
0.48
See note 14
.016
.019
.050
0.41
0.48
1.27
8,9
8,9
L2
P
.250
.100
6.35
2.54
8,9
7
Q
.030
.045
.034
.010
0.76
1.14
0.86
0.25
5
3,4
3
10
7
TL
TW
r
.029
.028
0.74
0.71
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For transistor types 2N3439L and 2N3440L (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45
mm) max. For transistor types 2N3439 and 2N3440 (T0-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch
(19.05 mm) max.
FIGURE 1. Physical dimensions (similar to TO-5 and TO-39).
T4-LDS-0134 Rev. 2 (110088)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
NOTES:
Dimensions
Millimeters
1. Dimensions are in inches.
Symbol
Inches
Min
.215
Note
2. Millimeters are given for general information only.
3. Dimension "CH" controls the overall package thickness.
When a window lid is used, dimension "CH" must increase
by a minimum of .010 inch (0.254 mm) and a maximum of
.040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the
manufacturer's option, from that shown on the drawing.
5. Dimensions "LW2" minimum and "L3" minimum and the
appropriate castellation length define an unobstructed three-
dimensional space traversing all of the ceramic layers in
which a castellation was designed. (Castellations are
required on bottom two layers, optional on top ceramic
layer.) Dimension "LW2" maximum and "L3" maximum
define the maximum width and depth of the castellation at
any point on its surface. Measurement of these dimensions
may be made prior to solder dipping.
Max
.225
.225
.155
.155
.075
.007
.042
.048
.088
.055
.028
.022
Min
5.46
Max
5.71
5.71
3.93
3.93
1.90
0.18
1.07
1.22
2.23
1.39
0.71
0.56
BL
BL2
BW
BW2
CH
.145
3.68
.061
.003
.029
.032
.072
.045
.022
.006
1.55
0.08
0.74
0.81
1.83
1.14
0.56
0.15
3
5
L3
LH
LL1
LL2
LS
LW
LW2
5
4
Pin no.
1
2
3
Transistor Collector Emitter Base N/C
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch
(0.15mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.
T4-LDS-0134 Rev. 2 (110088)
Page 5 of 5
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