JANS1N5620/TR [MICROSEMI]
Rectifier Diode,;
| 型号： | JANS1N5620/TR |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 二极管 |
| 文件： | 总3页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5614 thru 1N5622
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These
devices are also available in surface mount MELF package configurations by
adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).
Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular JEDEC registered 1N5614 to 1N5622 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
•
•
•
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
•
•
•
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
Low thermal resistance
•
Controlled avalanche with peak reverse power
capability
•
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5614US thru 1N5622US)
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Junction & Storage Temperature: -65oC to +200oC
•
•
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dimensions on last page)
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish. Note: Previous JANS
inventory had solid Silver axial-leads and no finish.
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Thermal Impedance: 4.5oC/W @ 10 ms heating time
•
•
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55ºC and 0.75 Amps @ TA = 100ºC
•
•
•
•
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
MINIMUM
BREAKDOWN
VOLTAGE
AVERAGE
RECTIFIED
CURRENT
IO @ TA
FORWARD
VOLTAGE
(MAX.)
REVERSE
CURRENT
(MAX.)
MAXIMUM
SURGE
CURRENT
IFSM
REVERSE
RECOVERY
(NOTE 3)
trr
REVERSE
TYPE
VF @ 3A
VOLTAGE VRWM
VBR @ 50μA
IR @ VRWM
(NOTE 2)
AMPS
VOLTS
VOLTS
VOLTS
μA
μs
55oC
25oC
100oC
25
25
25
25
25
1N5614
1N5616
1N5618
1N5620
1N5622
200
400
600
800
1000
220
440
660
880
1100
0.5
0.5
0.5
0.5
0.5
30
30
30
30
30
2.0
2.0
2.0
2.0
2.0
0.8 MIN.
1.3 MAX.
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A
Copyright © 2007
1-15-2007 REV C
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5614 thru 1N5622
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
VBR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range
VRWM
Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave
input and a 180 degree conduction angle
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature
IO
VF
IR
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
trr
GRAPHS
FIGURE 1
FIGURE 2
TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT
TYPICAL REVERSE CURRENT vs PIV
Copyright © 2007
1-15-2007 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5614 thru 1N5622
S C O T T S D A L E D I V I S I O N
FIGURE 3
FIGURE 4
MAXIMUM POWER DISSIPATION
vs LEAD TEMPERATURE
MAXIMUM CURRENT vs LEAD TEMPERATURE
PACKAGE DIMENSIONS
Dimensions: Inches/[mm]
NOTE: Lead tolerance = +0.003/-0.004 inches
Copyright © 2007
1-15-2007 REV C
Microsemi
Scottsdale Division
Page 3
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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