HU10015R [MICROSEMI]

Rectifier Diode, 1 Phase, 1 Element, 100A, 150V V(RRM), Silicon,;
HU10015R
型号: HU10015R
厂家: Microsemi    Microsemi
描述:

Rectifier Diode, 1 Phase, 1 Element, 100A, 150V V(RRM), Silicon,

整流二极管 局域网 超快恢复二极管 快速恢复二极管
文件: 总4页 (文件大小:209K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ultrafast Recovery Modules  
HU100, 101 & 102  
D
G
Std. Polarity  
Dim. Inches  
Millimeter  
Base is cathode  
J
Rev. Polarity  
Base is anode  
Minimum Maximum Minimum Maximum Notes  
1.52  
.725  
.605  
1.182  
.745  
.152  
1.56  
.775  
.625  
1.192  
.755  
.160  
38.61  
18.42  
15.37  
30.02  
18.92  
3.86  
39.62  
19.69  
15.88  
30.28  
19.18  
4.06  
A
B
C
D
E
F
G
H
J
B
K
Sq.  
Dia.  
F
C
H
E
1/4-20 UNC-2B  
13.34  
.580  
.525  
.156  
14.73  
4.06  
3.96  
.160  
K
L
12.57  
3.05  
.495  
.120  
.505  
.130  
12.83  
3.30  
Dia.  
A
Notes:  
L
Baseplate: Nickel plated  
copper  
Microsemi  
Working Peak  
Repetitive Peak  
Reverse Voltage Reverse Voltage  
Catalog Number  
HU10005*  
50V  
100V  
150V  
50V  
100V  
150V  
200V  
300V  
400V  
500V  
600V  
700V  
800V  
Ultra Fast Recovery  
HU10010*  
HU10015*  
HU10020*  
175 C Junction Temperature  
HU10120* 200V  
HU10130* 300V  
HU10140* 400V  
V
RRM 50 to 800 Volts  
High surge capacity  
100 Amp current rating  
ROHS Compliant  
500V  
600V  
700V  
800V  
HU10150*  
HU10260*  
HU10270*  
HU10280*  
Add Suffix R for Reverse Polarity  
Electrical Characteristics  
HU101  
HU100  
HU102  
I
T
I
Square Wave  
Average forward current  
Case Temperature  
100A  
135°C  
1500A  
.975V  
50ns  
100A  
120°C  
1400A  
1.25V  
70ns  
6.0mA  
50µA  
100A  
115°C  
1200A  
1.35V  
90ns  
F(AV)  
C
FSM  
R
0JC = 0.5°C/W  
T
8.3ms, half sine, J = 175°C  
Maximum surge current  
Max peak forward voltage  
Max reverse recovery time  
Max peak reverse current  
Max peak reverse current  
Typical Junction capacitance  
V
T
I
FM = 100A: J = 25°C*  
FM  
T
t
1/2A, 1A, 1/4A, J = 25°C  
rr  
I
I
C
V
V
V
T
RM  
RM  
J
RRM, J = 125°C  
T
RRM, J = 25°C  
T
575pF  
300pF  
275pF  
R = 10V, J = 25°C  
*Pulse test: Pulse width 300µsec, Duty cycle 2%  
Thermal and Mechanical Characteristics  
T
-55°C to 175°C  
-55°C to 175°C  
STG  
Storage temp range  
Operating junction temp range  
T
R
J
Junction to case  
0JC  
0.5°C/W  
Max thermal resistance  
Case to sink  
35-40 inch pounds  
20-25 inch pounds  
.012°C/W  
R
Typical thermal resistance (greased)  
Terminal Torque  
Mounting base torque - (outside holes)  
0
CS  
Weight  
1.1 ounces (32 grams) typical  
www.microsemi.com  
January, 2011 - Rev. 3  
HU100  
Figure 1  
Figure 3  
Typical Forward Characteristics  
Typical Junction Capacitance  
1000  
800  
10000  
6000  
4000  
600  
400  
2000  
1000  
600  
400  
200  
100  
80  
200  
100  
60  
40  
0.1  
0.5 1.0  
5.0  
10  
50 100  
Reverse Voltage - Volts  
Figure 4  
Forward Current Derating  
175 C  
25 C  
20  
175  
165  
155  
145  
135  
125  
115  
10  
8.0  
6.0  
4.0  
2.0  
1.0  
60 90 120 180  
DC  
105  
.2  
.4  
.6  
.8  
1.0  
1.2  
1.4  
1.6  
0
30  
60  
90  
120  
150  
Instantaneous Forward Voltage - Volts  
Average Forward Current - Amperes  
Figure 5  
Figure 2  
Typical Reverse Characteristics  
Maximum Forward Power Dissipation  
10  
140  
120  
100  
1.0  
DC  
175 C  
.1  
180  
80  
120  
125 C  
.01  
90  
60  
40  
60  
75 C  
25 C  
.001  
20  
0
.0001  
0
40  
80  
120  
160  
200  
0
30  
60  
90  
120  
150  
Average Forward Current - Amperes  
Reverse Voltage - Volts  
www.microsemi.com  
January, 2011 - Rev. 3  
HU101  
Figure 1  
Figure 3  
Typical Forward Characteristics  
Typical Junction Capacitance  
1000  
800  
1000  
600  
400  
600  
400  
200  
100  
80  
60  
200  
40  
20  
100  
80  
10  
60  
40  
0.1  
0.5 1.0  
5.0  
10  
50 100  
Reverse Voltage - Volts  
Figure 4  
Forward Current Derating  
25 C  
175 C  
20  
175  
165  
155  
145  
135  
125  
115  
10  
8.0  
6.0  
4.0  
2.0  
1.0  
60 90 120 180  
DC  
105  
0 .2  
.6  
1.0  
1.4  
1.8  
2.2  
2.6  
0
30  
60  
90  
150  
120  
Instantaneous Forward Voltage - Volts  
Average Forward Current - Amperes  
Figure 5  
Figure 2  
Typical Reverse Characteristics  
Maximum Forward Power Dissipation  
140  
10  
DC  
120  
1.0  
180  
100  
80  
175 C  
120  
90  
.1  
125 C  
60  
60  
40  
20  
0
.01  
75 C  
.001  
25 C  
.0001  
0
100  
200  
300  
400  
500  
0
30  
60  
90  
120  
150  
Average Forward Current - Amperes  
Reverse Voltage - Volts  
www.microsemi.com  
January, 2011 - Rev. 3  
HU102  
Figure 1  
Figure 3  
Typical Forward Characteristics  
Typical Junction Capacitance  
1000  
800  
10000  
6000  
4000  
600  
400  
2000  
1000  
800  
600  
200  
400  
200  
100  
80  
100  
60  
40  
0.1  
0.5 1.0  
5.0  
10  
50 100  
Reverse Voltage - Volts  
Figure 4  
Forward Current Derating  
25 C  
175 C  
20  
175  
165  
155  
145  
135  
125  
115  
10  
8.0  
6.0  
4.0  
2.0  
1.0  
60 90 120 180  
DC  
105  
0 .2  
.6  
1.0  
1.4  
1.8  
2.2  
2.6  
0
30  
60  
90  
120  
150  
Instantaneous Forward Voltage - Volts  
Average Forward Current - Amperes  
Figure 5  
Figure 2  
Typical Reverse Characteristics  
Maximum Forward Power Dissipation  
140  
10  
DC  
120  
180  
1.0  
120  
100  
80  
175 C  
90  
.1  
125 C  
60  
60  
40  
20  
0
.01  
75 C  
.001  
25 C  
.0001  
0
200  
400  
600  
800  
1000  
0
30  
60  
90  
120  
150  
Average Forward Current - Amperes  
Reverse Voltage - Volts  
www.microsemi.com  
January, 2011 - Rev. 3  

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