APT40N60LCFG [MICROSEMI]
Super Junction FREDFET; 超级结FREDFET
| 型号： | APT40N60LCFG |
| 厂家： | 
Microsemi |
| 描述： | Super Junction FREDFET |
| 文件： | 总5页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
600V 40A 0.110Ω
APT40N60B2CF
APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction FREDFET
COOLMOS
T-MaxTM
Power Semiconductors
TO-264
• Ultra Low R
DS(ON)
• Intrinsic Fast-Recovery Body Diode
• Extreme Low Reverse Recovery Charge
• Ideal For ZVS Applications
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
• Avalanche Energy Rated
g
• Popular T-MAX™ or TO-264 Package
dv
• Extreme
/
Rated
dt
D
S
Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two
parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
G
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Parameter
APT40N60B2CF(G)_LCF(G)
UNIT
VDSS
Volts
Drain-Source Voltage
600
40
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
ID
Amps
26
1
IDM
Pulsed Drain Current
80
VGS
Volts
Watts
W/°C
Gate-Source Voltage Continuous
±30
417
Total Power Dissipation @ TC = 25°C
PD
Linear Derating Factor
3.33
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 40A, TJ = 125°C)
-55 to 150
260
°C
dv
/
V/ns
80
20
1
dt
7
IAR
EAR
EAS
Avalanche Current
Amps
7
Repetitive Avalanche Energy
mJ
4
690
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
Volts
600
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 20A)
0.110 Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
4.2
µA
3400
IDSS
IGSS
nA
±100
5
VGS(th)
3
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
APT40N60B2CF(G)_LCF(G)
DYNAMIC CHARACTERISTICS
Symbol
Ciss
MIN
TYP
MAX
Characteristic
UNIT
Test Conditions
Input Capacitance
V
= 0V
5040
1365
80
GS
Coss
Crss
V
= 25V
pF
Output Capacitance
DS
f = 1 MHz
Reverse Transfer Capacitance
Qg
3
185
36
V
= 10V
Total Gate Charge
GS
Qgs
Qgd
td(on)
tr
V
= 300V
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
DD
I
= 40A @ 25°C
D
115
12
RESISTIVE SWITCHING
V
= 15V
GS
15
V
= 380V
DD
td(off)
60
Turn-off Delay Time
Fall Time
I
= 40A @ 25°C
D
tf
R
= 1.8Ω
6.4
G
INDUCTIVE SWITCHING @ 25°C
Eon
Eoff
6
725
365
Turn-on Switching Energy
V
= 400V, V = 15V
DD
GS
I
= 40A, R = 5Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVE SWITCHING @ 125°C
6
Eon
Eoff
1195
440
Turn-on Switching Energy
V
= 400V, V = 15V
DD
GS
I
= 40A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
40
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
Pulsed Source Current (Body Diode)
80
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -40A)
5
Volts
V/ns
2.4
40
dv
/
/
dt
dt
T
j = 25°C
195
290
1.8
3.5
trr
ns
(IS = -40A, di
Reverse Recovery Charge
(IS = -40A, di
dt = 100A/µs)
Peak Recovery Current
(IS = -40A, di
dt = 100A/µs)
/dt = 100A/µs)
T
T
T
T
T
j = 125°C
j = 25°C
j = 125°C
j = 25°C
j = 125°C
Qrr
µC
/
17
22
IRRM
Amps
/
THERMAL CHARACTERISTICS
Symbol Characteristic
UNIT
MIN
TYP
MAX
0.30
31
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 13.80mH, R = 25Ω, Peak I = 10A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
dt
di
device itself. I ≤ -I 40A
/
≤ 700A/µs
V
R ≤480V T ≤125°C
J
S
D
dt
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calcu-
lated as PAV = E *f
AR
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
0.10
Note:
t
1
0.3
t
2
t
1
0.05
0
t
/
2
Duty Factor D =
Peak T = P x Z
0.1
0.05
SINGLE PULSE
10-3
+ T
C
J
DM
θJC
10-5
10-4
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT40N60B2CF(G)_LCF(G)
100
90
80
70
60
50
40
30
20
VGS = 15 &10 V
8V
TJ (°C)
TC (°C)
7.5V
0.0136
0.0289
0.0988
0.158
Dissipated Power
(Watts)
7V
0.00308
0.00145
0.00948
0.231
6.5V
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
10
0
6V
5.5V
0
V
5
10
15
20
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
120
1.40
NORMALIZED TO
VDS> ID(ON)
x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
= 10V
@
20A
GS
100
80
60
40
20
0
1.30
1.20
1.10
1.00
VGS=10V
TJ = -55°C
TJ = +25°C
TJ = +125°C
VGS=20V
0.90
0.80
0
V
2
4
6
8
10
0
10 20 30 40 50
60 70 80
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.15
1.10
1.05
1.00
40
35
30
25
20
15
10
0.95
0.90
5
0
25
50
75
100
125
150
-50
0
50
100
150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
3.0
1.2
I
= 20A
= 10V
D
V
GS
2.5
2.0
1.5
1.0
1.1
1.0
0.9
0.8
0.5
0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT40N60B2CF(G)_LCF(G)
30,000
10,000
Ciss
1,000
100
10
Coss
Graph removed
Crss
0
V
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
20
30
40
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
16
I
= 40A
D
100
12
TJ =+150°C
TJ =+25°C
VDS=120V
VDS=300V
8
VDS=480V
10
4
0
1
0
50
100
150
200
250
300
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
g
SD
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
180
80
V
= 400V
DD
= 5Ω
160
R
T
70
60
50
40
30
20
10
0
G
td(off)
= 125°C
J
140
120
L = 100µH
V
= 400V
DD
= 5Ω
R
T
tf
G
100
80
60
40
20
0
= 125°C
J
L = 100µH
tr
td(on)
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
40
(A)
50
60
70
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
1000
500
2500
V
= 400V
DD
= 5Ω
R
T
G
= 125°C
J
2000
L = 100µH
includes
E
on
diode reverse recovery.
Eon
1500
Eoff
Eon
1000
V
I
= 400V
DD
= 40A
D
T
= 125°C
500
0
J
L = 100µH
includes
Eoff
E
on
diode reverse recovery.
0
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
40
50
R , GATE RESISTANCE (Ohms)
D
G
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT40N60B2CF(G)_LCF(G)
90%
Gate Voltage
10%
Gate Voltage
T 125°C
J
T 125°C
J
td(off)
td(on)
tf
tr
Drain Voltage
Drain Current
90%
90%
5%
10%
5%
Drain Current
10%
Drain Voltage
0
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DQ60
V
V
I
DS
DD
D
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline (B2CF)
TO-264 (L) Package Outline (LCF)
SAC: Tin, Silver, Copper
SAC: Tin, Silver, Copper
e1
e1
4.69 (.185)
4.60 (.181)
5.21 (.205)
5.31 (.209)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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