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APT33N90JCCU2 [MICROSEMI]

ISOTOP® Boost chopper Super Junction MOSFET SiC chopper diode; ISOTOP®升压斩波超级结MOSFET的SiC二极管的菜刀
APT33N90JCCU2
型号： APT33N90JCCU2
厂家： Microsemi    Microsemi
描述：

ISOTOP® Boost chopper Super Junction MOSFET SiC chopper diode
ISOTOP®升压斩波超级结MOSFET的SiC二极管的菜刀

晶体 二极管 晶体管 功率场效应晶体管 开关 脉冲 局域网
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APT33N90JCCU2  
ISOTOP® Boost chopper  
Super Junction MOSFET  
SiC chopper diode  
VDSS = 900V  
R
DSon = 120mΩ max @ Tj = 25°C  
ID = 33A @ Tc = 25°C  
Application  
•
•
•
•
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Brake switch  
K
D
Features  
•
-
Ultra low RDSon  
-
-
-
Low Miller capacitance  
Ultra low gate charge  
Avalanche energy rated  
G
• SiC Schottky Diode  
S
-
-
-
-
Zero reverse recovery  
Zero forward recovery  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
K
S
•
•
•
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
D
G
Benefits  
•
•
•
•
•
•
•
Outstanding performance at high frequency operation  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
ISOTOP®  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
900  
33  
25  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
75  
±20  
120  
V
mΩ  
W
PD  
Maximum Power Dissipation  
Tc = 25°C  
290  
IAR  
EAR  
EAS  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
8.8  
2.9  
1940  
A
mJ  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 5  
www.microsemi.com  
APT33N90JCCU2  
All ratings @ Tj = 25°C unless otherwise specified  
Electrical Characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
VGS = 0V,VDS = 900V  
VGS = 0V,VDS = 900V  
VGS = 10V, ID = 26A  
VGS = VDS, ID = 3mA  
Tj = 25°C  
100  
IDSS  
Zero Gate Voltage Drain Current  
µA  
Tj = 125°C  
500  
RDS(on) Drain – Source on Resistance  
VGS(th) Gate Threshold Voltage  
100  
3
120  
3.5  
mΩ  
V
2.5  
IGSS  
Gate – Source Leakage Current  
VGS = ±20 V, VDS = 0V  
100  
nA  
Dynamic Characteristics  
Symbol Characteristic  
Test Conditions  
VGS = 0V ; VDS = 100V  
f = 1MHz  
Min  
Typ  
6.8  
0.33  
Max Unit  
Ciss  
Input Capacitance  
Output Capacitance  
nF  
Coss  
Qg  
Total gate Charge  
270  
32  
VGS = 10V  
V
Bus = 400V  
nC  
ns  
Qgs  
Gate – Source Charge  
ID = 26A  
Qgd  
Td(on)  
Tr  
Gate – Drain Charge  
Turn-on Delay Time  
Rise Time  
115  
70  
Inductive Switching (125°C)  
V
V
GS = 10V  
Bus = 600V  
20  
Td(off) Turn-off Delay Time  
400  
ID = 26A  
RG = 7.5Ω  
Tf  
Fall Time  
25  
0.9  
Inductive switching @ 25°C  
Eon  
Eoff  
Eon  
Eoff  
Turn-on Switching Energy  
Turn-off Switching Energy  
Turn-on Switching Energy  
Turn-off Switching Energy  
mJ  
mJ  
V
GS = 10V ; VBus = 600V  
0.75  
1.3  
ID = 26A ; RG = 7.5Ω  
Inductive switching @ 125°C  
V
GS = 10V ; VBus = 600V  
0.85  
ID = 26A ; RG = 7.5Ω  
SiC chopper diode ratings and characteristics  
Symbol Characteristic  
Test Conditions  
Min Typ Max Unit  
Maximum Peak Repetitive Reverse Voltage  
VRRM  
IRM  
IF  
1200  
V
µA  
A
Tj = 25°C  
Tj = 175°C  
Tc = 100°C  
Tj = 25°C  
Tj = 175°C  
32  
56  
200  
1000  
Maximum Reverse Leakage Current  
DC Forward Current  
VR=1200V  
10  
1.6  
2.3  
1.8  
3
VF  
Diode Forward Voltage  
IF = 10A  
V
IF = 10A, VR = 600V  
di/dt =500A/µs  
QC  
C
Total Capacitive Charge  
Total Capacitance  
40  
nC  
pF  
f = 1MHz, VR = 200V  
f = 1MHz, VR = 400V  
96  
69  
2 – 5  
www.microsemi.com  
APT33N90JCCU2  
Thermal and package characteristics  
Symbol Characteristic  
Min Typ Max Unit  
CoolMOS  
SiC Diode  
0.43  
1.65  
20  
RthJC  
Junction to Case Thermal Resistance  
°C/W  
RthJA  
Junction to Ambient (IGBT & Diode)  
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz  
TJ,TSTG Storage Temperature Range  
Max Lead Temp for Soldering:0.063” from case for 10 sec  
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)  
VISOL  
2500  
-40  
V
150  
300  
1.5  
°C  
TL  
N.m  
g
Wt  
Package Weight  
29.2  
SOT-227 (ISOTOP®) Package Outline  
11.8 (.463)  
12.2 (.480)  
31.5 (1.240)  
31.7 (1.248)  
8.9 (.350)  
9.6 (.378)  
W=4.1 (.161)  
W=4.3 (.169)  
H=4.8 (.187)  
H=4.9 (.193)  
(4 places)  
7.8 (.307)  
8.2 (.322)  
Hex Nut M4  
(4 places)  
25.2 (0.992)  
25.4 (1.000)  
r = 4.0 (.157)  
(2 places)  
4.0 (.157)  
4.2 (.165)  
(2 places)  
0.75 (.030) 12.6 (.496)  
0.85 (.033) 12.8 (.504)  
3.3 (.129)  
3.6 (.143)  
1.95 (.077)  
2.14 (.084)  
14.9 (.587)  
15.1 (.594)  
Drain  
Cathode  
30.1 (1.185)  
30.3 (1.193)  
38.0 (1.496)  
38.2 (1.504)  
Source  
Dimensions in Millimeters and (Inches)  
Gate  
Typical CoolMOS performance Curve  
Operating Frequency vs Drain Current  
ON resistance vs Temperature  
250  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VDS=600V  
D=50%  
RG=7.5Ω  
TJ=125°C  
TC=75°C  
ZVS  
200  
150  
100  
50  
ZCS  
Hard  
switching  
0
25  
50  
75  
100  
125  
150  
10  
15  
20  
25  
30  
TJ, Junction Temperature (°C)  
ID, Drain Current (A)  
Switching Energy vs Gate Resistance  
Switching Energy vs Current  
3
2
1
0
2
2
1
1
0
Eoff  
VDS=600V  
RG=7.5Ω  
TJ=125°C  
L=100µH  
Eon  
Eon  
Eoff  
VDS=600V  
ID=26A  
TJ=125°C  
L=100µH  
5
10  
15  
20  
25  
30  
35  
40  
5
10  
15  
20  
25  
30  
35  
ID, Drain Current (A)  
Gate Resistance (Ohms)  
3 – 5  
www.microsemi.com  
APT33N90JCCU2  
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.9  
0.7  
0.5  
0.3  
0.1  
Single Pulse  
0.05  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
rectangular Pulse Duration (Seconds)  
Low Voltage Output Characteristics  
Breakdown Voltage vs Temperature  
120  
80  
40  
0
1000  
975  
950  
925  
900  
VGS=20, 8V  
6V  
5V  
25  
50  
75  
100  
125  
0
5
10  
15  
20  
TJ, Junction Temperature (°C)  
V
DS, Drain to Source Voltage (V)  
Maximum Safe Operating Area  
DC Drain Current vs Case Temperature  
35  
1000  
30  
25  
20  
15  
10  
5
100 µs  
limited by RDSon  
100  
10  
1
Single pulse  
TJ=150°C  
TC=25°C  
10 ms  
0
1
10  
100  
1000  
25  
50  
75  
100  
125  
150  
VDS, Drain to Source Voltage (V)  
TC, Case Temperature (°C)  
Capacitance vs Drain to Source Voltage  
Gate Charge vs Gate to Source Voltage  
10  
8
100000  
10000  
1000  
100  
VDS=400V  
ID=26A  
Ciss  
TJ=25°C  
6
Coss  
Crss  
4
2
10  
0
1
0
50  
100 150 200 250 300  
Gate Charge (nC)  
0
25 50 75 100 125 150 175 200  
DS, Drain to Source Voltage (V)  
V
4 – 5  
www.microsemi.com  
APT33N90JCCU2  
Typical SiC Chopper diode performance Curve  
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration  
1.8  
1.6  
1.4  
1.2  
1
0.9  
0.7  
0.5  
0.3  
0.8  
0.6  
0.4  
0.2  
0
0.1  
Single Pulse  
0.01  
0.05  
0.00001  
0.0001  
0.001  
0.1  
1
10  
Rectangular Pulse Duration (Seconds)  
Reverse Characteristics  
Forward Characteristics  
20  
16  
12  
8
100  
75  
TJ=25°C  
TJ=75°C  
50  
TJ=75°C  
TJ=125°C  
TJ=125°C  
TJ=175°C  
25  
4
TJ=175°C  
2.5  
TJ=25°C  
0
0
0
0.5  
1
1.5  
2
3
3.5  
400 600 800 1000 1200 1400 1600  
R Reverse Voltage (V)  
V
VF Forward Voltage (V)  
Capacitance vs.Reverse Voltage  
700  
600  
500  
400  
300  
200  
100  
0
1
10  
100  
1000  
VR Reverse Voltage  
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon  
Technologies AG”.  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103  
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262  
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.  
5 – 5  
www.microsemi.com  

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