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APT32GU30B [MICROSEMI]

Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN;

APT32GU30B


元器件型号：	APT32GU30B
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN 局域网栅瞄准线功率控制晶体管
PDF文件：	总6页 (文件大小：86K)
下载文档：	下载PDF数据表文档文件
型号参数：APT32GU30B参数

APT32GU30BG

Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 MICROSEMI

APT32GU30K

POWER MOS 7 IGBT

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10 ADPOW

APT32GU30K

Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-220AC, 3 PIN

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0 MICROSEMI

APT32GU30KG

Insulated Gate Bipolar Transistor, 55A I(C), 300V V(BR)CES, N-Channel, TO-220AC, 3 PIN

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0 MICROSEMI

APT32M80J

N-Channel MOSFET

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9 MICROSEMI

APT33GF120B2RD

The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

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40 ADPOW

APT33GF120B2RDQ2

FAST IGBT & FRED

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20 ADPOW

APT33GF120B2RDQ2G

FAST IGBT & FRED

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36 ADPOW

APT33GF120BR

Volts:1200V VF/Vce(ON):3.2V ID(cont):33Amps|Fast IGBT Family

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73 ETC

APT33GF120BR

Fast IGBT

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29 ADPOW

APT33GF120BRG

Power Semiconductors Power Modules

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33 MICROSEMI

APT33GF120HR

The Fast IGBT is a new generation of high voltage power IGBTs

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21 ADPOW

APT33GF120LRD

The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

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41 ADPOW

APT33GF120LRDQ2

FAST IGBT & FRED

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26 ADPOW

APT33GF120LRDQ2G

FAST IGBT & FRED

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17 ADPOW

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