APT30DQ60BHB [MICROSEMI]
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE; 超快软恢复整流二极管
| 型号： | APT30DQ60BHB |
| 厂家： | 
Microsemi |
| 描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT30DQ60BHB
APT30DQ60BHB(G)
600V 2X30A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT BENEFITS
PRODUCT FEATURES
• Low Losses
• Ultrafast Recovery Times
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Low Noise Switching
• Cooler Operation
• Soft Recovery Characteristics
1
2
3
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Low Forward Voltage
• Higher Reliability Systems
-Inverters
• Snubber Diode
• Increased System Power
Density
• Low Leakage Current
1
3
• PFC
• Avalanche Energy Rated
2
• RoHS Compliant
1 - Cathode 1
2 - Anode 1
Cathode 2
3 - Anode 2
MAXIMUM RATINGS
All Ratings per diode: T = 25°C unless otherwise specified.
C
Characteristic / Test Conditions
APT30DQ60BHB(G)
UNIT
Symbol
VR
Maximum D.C. Reverse Voltage
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Volts
600
Maximum Average Forward Current (TC = 67°C, Duty Cycle = 0.5)
30
51
RMS Forward Current (Square wave, 50% duty)
Amps
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
320
EAVL
mJ
°C
Avalanche Energy (1A, 40mH)
20
TJ,TSTG
TL
-55 to 175
300
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
UNIT
MIN
TYP
MAX
IF = 30A
2.0
2.4
1.7
2.4
IF = 60A
VF
Forward Voltage
Volts
IF = 30A, TJ = 125°C
VR = 600V
25
IRM
CT
μA
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
VR = 600V, TJ = 125°C
500
pF
36
DYNAMIC CHARACTERISTICS
APT30DQ60BHB(G)
Characteristic
Symbol
MIN
TYP
23
MAX
UNIT
Test Conditions
trr
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
-
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
-
30
IF = 30A, diF/dt = -200A/μs
Qrr
nC
Amps
ns
-
-
-
-
-
55
3
VR = 400V, TC = 25°C
IRRM
-
-
Maximum Reverse Recovery Current
Reverse Recovery Time
trr
175
485
6
IF = 30A, diF/dt = -200A/μs
Qrr
nC
Reverse Recovery Charge
VR = 400V, TC = 125°C
IRRM
trr
Maximum Reverse Recovery Current
Amps
ns
-
-
-
75
855
22
Reverse Recovery Time
IF = 30A, diF/dt = -1000A/μs
Qrr
nC
Reverse Recovery Charge
VR = 400V, TC = 125°C
IRRM
Amps
Maximum Reverse Recovery Current
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
RθJC
WT
1.5
Junction-to-Case Thermal Resistance
Package Weight
°C/W
oz
0.22
5.9
g
10
lb•in
N•m
Torque
Maximum Mounting Torque
1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
1.6
1.4
1.2
1.0
0.8
Note:
0.6
t
1
0.4
0.2
0
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
+ T
C
J
DM
θJC
10-5
10-3
10-2
10-4
0.1
RECTANGULAR PULSE DURATION (seconds)
1
10
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (°C)
TC (°C)
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.481
1.019
Dissipated Power
(Watts)
0.0531
0.0023
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
APT30DQ60BHB(G)
250
160
140
120
100
80
T
= 125°C
= 400V
TJ= 125°C
J
V
60A
R
TJ= 55°C
200
30A
15A
TJ= 150°C
TJ= 25°C
150
100
50
0
60
40
20
0
0
1
2
3
4
5
6
7
8
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
V , ANODE-TO-CATHODE VOLTAGE (V)
F
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
FIGURE 2, Forward Current vs. Forward Voltage
25
1400
1200
1000
800
600
400
200
0
T
= 125°C
= 400V
T
= 125°C
V = 400V
R
J
J
V
60A
60A
30A
R
30A
20
15
10
15A
15A
5
0
0
200
400
600
800
1000
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.3
60
1.2
1.0
50
40
30
20
10
0.5
tRR
0.4
IRRM
0.3
QRR
0.2
Duty cycle = 0.5
TJ = 45°C
0
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
100
125
150 175
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 6, Dynamic Parameters vs Junction Temperature
200
160
120
80
40
0
1
10
100 200
V , REVERSE VOLTAGE (V)
R
FIGURE 8, Junction Capacitance vs. Reverse Voltage
APT30DQ60BHB(G)
V
r
diF/dt Adjust
+18V
0V
APT30GT60BR
D.U.T.
t
Q
/
30μH
rr rr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
3
rr
2
5
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Cathode 1
1.01 (.040)
1.40 (.055)
Anode 1 / Cathode 2
Anode 2
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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