APT20M20B2FLLG [MICROSEMI]
Power Field-Effect Transistor, 100A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3;
| 型号： | APT20M20B2FLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 100A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 晶体 晶体管 开关 脉冲 |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT20M20B2LL
APT20M20LLL
200V 100A 0.020Ω
R
POWER MOS 7 MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
T-MAX™
TO-264
D
S
• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
G
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT20M20B2LL_LLL
UNIT
VDSS
ID
Drain-Source Voltage
200
100
Volts
5
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
400
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
568
PD
4.55
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
100
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
50
4
2500
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 50A)
0.020
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMICCHARACTERISTICS
Symbol Characteristic
APT20M20B2LL_LLL
TestConditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
6850
2180
95
V
= 0V
GS
Output Capacitance
V
= 25V
DS
pF
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
110
43
GS
V
= 100V
Qgs
Qgd
td(on)
tr
DD
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
I
= 100A @ 25°C
D
47
RESISTIVESWITCHING
13
V
= 15V
GS
40
V
= 100V
DD
I
= 100A @ 25°C
td(off)
26
Turn-off Delay Time
Fall Time
D
R
= 0.6Ω
G
tf
2
INDUCTIVESWITCHING@25°C
7
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
465
455
920
915
V
= 130V, V = 15V
GS
DD
I
= 100A, R = 5Ω
Turn-off Switching Energy
D
G
INDUCTIVESWITCHING@125°C
µJ
7
Turn-on Switching Energy
V
= 130V, V = 15V
GS
DD
I
= 100A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
100
400
1.3
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
Pulsed Source Current
(Body Diode)
2
VSD
t rr
Diode Forward Voltage (VGS = 0V, IS = -ID100A)
Volts
ns
284
Reverse Recovery Time (IS = -ID100A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID100A, dlS/dt = 100A/µs)
Q rr
3.06
µC
dv
/
dv
6
V/ns
5
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.22
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 0.50mH, R = 25Ω, Peak I = 100A
j
G
L
5 The maximum current is limited by lead temperature
dv
6
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 75A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
7 Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinforationcontainedherein.
0.25
0.9
0.20
0.7
0.15
0.5
Note:
0.10
t
1
0.3
t
2
t
0.05
1
Duty Factor D =
/
t
2
0.1
0.05
Peak T = P
x Z + T
J
DM
θJC C
SINGLEPULSE
10-3
0
10-5
10-4
10-2
10-1
1
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
APT20M20B2LL_LLL
Typical Performance Curves
250
V
=15 &10V
9V
GS
RC MODEL
200
150
100
Junction
temp. ( ”C)
7.5V
0.0844
0.0124F
0.218F
Power
(Watts)
7V
0.138
6.5
Case temperature
6V
50
0
5.5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2,TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.40
200
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
MAX.
DS(ON)
DS
D
V
= 10V
@
I
= 50A
180
160
140
120
100
80
GS
D
1.30
1.20
1.10
1.00
T
= +125°C
J
V
=10V
T
= +25°C
= -55°C
GS
J
T
J
60
40
20
0
V
=20V
GS
0.90
0.80
0
1
2
3
4
5
6
7
8
9
10
0
20 40
60 80 100 120 140 160
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R
vsDRAINCURRENT
DS(ON)
1.15
1.10
1.05
1.00
120
100
80
60
40
0.95
0.90
20
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 50A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,R
vs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
DS(ON)
APT20M20B2LL_LLL
20,000
10,000
508
100
OPERATIONHERE
LIMITEDBYR (ON)
DS
C
iss
100µS
C
oss
1,000
1mS
10
1
100
10
10mS
C
rss
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
1
10
100 200
0
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
16
200
I
= 75A
D
100
V
=40V
DS
12
T =+150°C
J
T =+25°C
J
V
=100V
DS
V
=160V
DS
8
10
4
0
1
0
20 40 60 80 100 120 140 160 180
Q ,TOTALGATECHARGE(nC)
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
90
160
V
= 130V
DD
= 5Ω
R
T
80
G
140
120
100
80
= 125°C
t
J
d(off)
70
L = 100µH
V
= 130V
60
50
40
30
DD
= 5Ω
R
T
G
= 125°C
t
f
J
L = 100µH
t
r
60
t
d(on)
40
20
10
0
20
0
20
40
60
80
(A)
100
120
140
20
40
60
80
(A)
100
120
140
I
I
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
1200
1000
800
2500
V
= 130V
DD
= 5Ω
R
T
G
= 125°C
J
2000
1500
1000
500
0
L = 100µH
E
EON includes
off
diode reverse recovery.
E
on
600
E
V
I
= 130V
on
DD
= 100A
400
D
T
= 125°C
J
L = 100µH
EON includes
diode reverse recovery.
200
0
E
off
20
40
60
80
(A)
100
120
140
0
5
10 15 20 25 30 35 40 45 50
R ,GATERESISTANCE(Ohms)
I
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT20M20B2LL_LLL
90%
10%
GateVoltage
GateVoltage
T 125°C
T 125°C
J
J
td(off)
td(on)
tf
tr
DrainVoltage
DrainCurrent
DrainCurrent
DrainVoltage
90%
90%
10%
5%
0
5%
10%
SwitchingEnergy
SwitchingEnergy
Figure18,Turn-onSwitchingWaveformsandDefinitions
Figure19,Turn-offSwitchingWaveformsandDefinitions
APT100S20B
VCE
IC
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2)PackageOutline
TO-264(L)PackageOutline
4.69 (.185)
4.60 (.181)
5.31 (.209)
15.49 (.610)
16.26 (.640)
5.21 (.205)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
Gate
Drain
Source
1.01 (.040)
1.40 (.055)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.21 (.087)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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