5962-9669105HTX [MICROSEMI]
Standard SRAM, 128KX8, 55ns, CMOS, CDSO32, CERAMIC, SOJ-32;
| 型号： | 5962-9669105HTX |
| 厂家： | 
Microsemi |
| 描述： | Standard SRAM, 128KX8, 55ns, CMOS, CDSO32, CERAMIC, SOJ-32 CD 静态存储器 |
| 文件： | 总11页 (文件大小：1068K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS128K8-XXX
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
FEATURES
Access Times 15, 17, 20, 25, 35, 45, 55ns
32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
Revolutionary, Center Power/Ground Pinout JEDEC
Approved
MIL-STD-883 Compliant Devices Available
Commercial, Industrial and Military Temperature Range
5 Volt Power Supply
• 32 lead Ceramic SOJ (Package 101)
• 36 lead Ceramic Flat Pack (Package 226)
Evolutionary, Corner Power/Ground Pinout JEDEC
Low Power CMOS
Approved
2V Data Retention Devices Available (Low Power Version)
TTL Compatible Inputs and Outputs
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Flat Pack (Package 206)
This product is subject to change without notice.
Revolutionary Pinout
Evolutionary Pinout
32 DIP
32 CSOJ (DE)
36 FLAT PACK
Top View
32 CSOJ (DR)
Top View
32 FLATPACK (FE)
Top View
32 CLCC
Top View
A0
A1
A2
1
2
3
4
5
6
7
8
32 A16
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
32
VCC
NC
A0
A1
A2
A3
CS#
I/O0
I/O1
VCC
GND
I/O2
I/O3
WE#
A4
1
2
3
4
5
6
7
8
36 NC
35 A16
34 A15
33 A14
32 A13
31 OE#
30 I/O7
29 I/O6
28 GND
31 A15
30 A14
29 A13
28 OE#
27 I/O8
26 I/O7
25 GND
31 A15
30 NC
29 WE#
28 A13
27 A8
4
3
2
1
32 31 30
29 WE#
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
I/O0 13
5
6
7
8
9
A3
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
CS#
I/O1
I/O2
VCC
GND
I/O3
I/O4
WE#
A4
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
9
24
VCC
9
9
10
11
12
13
14
15
16
23 I/O6
22 I/O5
21 A12
20 A11
19 A10
18 A9
10
11
12
13
14
15
16
10
11
12
13
14
15
16
17
18
27
VCC
26 I/O5
25 I/O4
24 A12
23 A11
22 A10
21 A9
14 15 16 17 18 19 20
A5
A6
A7
A5
A6
A7
NC
17 A8
20 A8
19 NC
Pin Description
A0-16
Address Inputs
Data Input/Output
Chip Select
I/O0-7
CS
OE
Output Enable
Write Enable
+5.0V Power
Ground
WE
VCC
GND
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
VCC+0.5
150
Unit
°C
°C
V
CS#
H
OE#
X
WE#
X
Mode
Standby
Read
Data I/O
High Z
Power
Standby
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TSTG
VG
L
L
H
Data Out
Data In
High Z
L
X
L
Write
Active
TJ
°C
V
L
H
H
Out Disable
Active
VCC
-0.5
7.0
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
2.2
VCC + 0.3
+0.8
V
VIL
-0.5
-55
V
TA
+125
°C
CAPACITANCE
TA = +25°C
Parameter
Symbol
Condition
Package
Speed (ns)
15 to 55
15 to 25
35 to 55
15 to 55
15 to 55
35 to 55
15 to 55
Max
Unit
32 Pin CSOJ, DIP, Flat Pack Evolutionary
36 Pin Flat Pack and
20
12
20
20
12
20
15
pF
pF
pF
pF
pF
pF
pF
Input capacitance
CIN
VIN = 0V, f = 1.0MHz
32 Pin CSOJ Revolutionary
32 Pin CSOJ, DIP, Flat Pack Evolutionary
36 Pin Flat Pack and
Output capicitance
COUT
VOUT = 0V, f = 1.0MHz
32 Pin CSOJ Revolutionary
32 Pin CLCC
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
Conditions
-15 -17
-20
-25
-35
-45
-55
Units
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
10
10
10
10
10
10
10
10
10
10
10
10
10
10
μA
μA
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 2.1mA, VCC = 4.5
ICC
ISB
150
20
150
20
150
20
150
15
150
15
150
15
150 mA
15
mA
V
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
0.4
0.4
0.4
0.4
0.4
0.4
IOH = -1.0mA, VCC = 4.5
2.4
2.4
2.4
2.4
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C TA < 125°C
-15
-17
-20
-25
-35
-45
-55
Parameter Read Cycle
Symbol
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time
tRC
tAA
15
0
17
0
20
0
25
0
35
0
45
0
55
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
15
17
20
25
35
45
55
Output Hold from Address Change
Chip Select Access Time
tOH
tACS
tOE
15
10
17
10
20
12
25
15
35
20
45
25
55
30
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1
tCLZ
3
0
3
0
3
0
3
0
3
0
3
0
3
0
1
tOLZ
1
tCHZ
10
10
10
10
10
10
12
12
20
20
20
20
20
20
1
tOHZ
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C TA < 125°C
-17 -20 -25
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
-15
-35
-45
-55
Parameter Write Cycle
Symbol
Unit
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
15
14
14
10
14
0
17
14
15
10
14
0
20
15
15
12
15
0
25
20
20
15
20
0
35
25
25
20
25
0
45
30
30
25
30
0
55
45
45
25
45
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
tAH
0
0
0
0
0
0
0
1
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tOW
tWHZ
tDH
3
3
3
3
4
4
4
1
10
10
12
15
20
25
25
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
Input Rise and Fall
V
IL = 0, VIH = 3.0
V
ns
V
5
Input and Output Reference Level
Output Timing Reference Level
NOTES:
1.5
1.5
IOL
V
Current Source
V
I
Z is programmable from -2V to +7V.
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75Ω.
Z is typically the midpoint of VOH and VOL
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
VZ ≈ 1.5V
D.U.T.
V
I
.
(Bipolar Supply)
= 50 pF
IOH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
TIMING WAVEFORM – READ CYCLE
tRC
ADDRESS
CS#
tAA
tRC
ADDRESS
DATA I/O
tAA
tACS
tCLZ
tCHZ
tOH
OE#
PREVIOUS DATA VALID
DATA VALID
tOE
tOLZ
tOHZ
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH)
DATA I/O
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = VIH)
WRITE CYCLE – WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS#
WE#
tAS
tWP
tOW
tDH
tDW
DATA VALID
tWHZ
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
tWC
ADDRESS
tAW
tAS
tAH
tCW
CS#
tWP
WE#
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
PACKAGE 101 – 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
1.23 (0.442)
0.30 (0.012)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
PACKAGE 206 – 32 LEAD, CERAMIC FLAT PACK
20.83 (0.820)
0.25 (0.010)
3.18 (0.125) MAX
.41 (0.410)
.13 (0.005)
7.87 (0.310)
0.13 (0.005)
6.35 (0.25
MIN
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 226 – 36 LEAD, CERAMIC FLAT PACK
23.37 (0.920)
0.25 (0.010)
PIN 1
2.72 (0.107)
MAX
IDENTIFIER
12.95 (0.510)
0.13 (0.005)
12.7 (0.500)
0.5 (0.020)
5.1 (0.200)
0.25 (0.010)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
21.59 (0.850) TYP
0.127 (0.005)
0.05 (0.002)
3.8 (0.150)
TYP
32.64 (1.285) TYP
38.1 (1.50) 0.4 (0.015)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
PACKAGE 300 – 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
0.25 (0.010)
0.05 (0.002)
0.99 (0.039)
0.51 (0.020)
15.25 (0.600)
0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
0.1 (0.005)
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
PACKAGE 601 – 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
7.62 (0.300) TYP
3.81
(0.150) TYP
5.08
(0.200)
TYP
0.56 (0.022)
0.71 (0.028)
10.16
(0.400)
TYP
PIN 1
0.38 (0.015) x 45°
PIN 1 IDENTIFIER
11.25 (0.443)
14.15 (0.457)
1.63 (0.064)
2.54 (0.100)
13.79 (0.543)
14.15 (0.557)
1.02 (0.040) x 45°
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
DATA RETENTION CHARACTERISTICS
-55°C ≤ TA ≤ +125°C
Low Power L Version Only
Parameter
Symbol
VDR
Conditions
CS# ≥ VCC -0.2V
VCC = 2V
Min
Max
5.5
Units
V
Data Retention Supply Voltage
Data Retention Current
2.0
ICCDR3
400
μA
ORDERING INFORMATION
W M S 128K8 X - XXX X X X
MICROSEMI CORPORATION
MONOLITHIC
SRAM
ORGANIZATION, 128K x 8
IMPROVEMENT MARK
L
= Low Power for 2V Data Retention
ACCESS TIME (ns)
PACKAGE:
C
= 32 Pin Ceramic .600" DIP (Package 300)
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
F
= 36 Lead Ceramic Flat Pack (Package 226)
FE = 32 Lead Ceramic Flat Pack (Package 220)
DEVICE GRADE:
M = Military Screened -55°C to +125°C
I
= Industrial
-40°C to +85°C
0°C to +70°C
C
= Commercial
LEAD FINISH:
Blank = Gold plated leads
= Solder dip leads
A
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
Device Type
Speed
Package
SMD No.
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
55ns
45ns
35ns
25ns
20ns
17ns
15ns
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
32 lead SOJ Revol (DR)
5962-96691 05HUX
5962-96691 06HUX
5962-96691 07HUX
5962-96691 08HUX
5962-96691 09HUX
5962-96691 10HUX
5962-96691 11HUX
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
55ns
45ns
35ns
25ns
20ns
17ns
15ns
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
5962-96691 05HTX
5962-96691 06HTX
5962-96691 07HTX
5962-96691 08HTX
5962-96691 09HTX
5962-96691 10HTX
5962-96691 11HTX
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
55ns
45ns
35ns
25ns
20ns
17ns
15ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96691 05HYX
5962-96691 06HYX
5962-96691 07HYX
5962-96691 08HYX
5962-96691 09HYX
5962-96691 10HYX
5962-96691 11HYX
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
128K x 8 SRAM Monolithic
55ns
45ns
35ns
25ns
20ns
17ns
15ns
36 pin Flatpack (F)
36 pin Flatpack (F)
36 pin Flatpack (F)
36 pin Flatpack (F)
36 pin Flatpack (F)
36 pin Flatpack (F)
36 pin Flatpack (F)
5962-96691 05HXX
5962-96691 06HXX
5962-96691 07HXX
5962-96691 08HXX
5962-96691 09HXX
5962-96691 10HXX
5962-96691 11HXX
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
10
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS128K8-XXX
Document Title
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
Revision History
Rev # History
Release Date Status
Rev 6
Changes (Pg. 1-11)
March 2011
Final
6.1 Change document layout from White Electronic Designs to Microsemi
6.2 Add document Revision History page
Microsemi Corporation reserves the right to change products or specifications without notice.
March 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 6
11
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
相关型号：
5962-9669105HYX
Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.600 INCH, SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
MICROSEMI
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