2N6051 [MICROSEMI]
PNP DARLINGTON POWER SILICON TRANSISTOR; PNP达林顿功率硅晶体管
| 型号： | 2N6051 |
| 厂家： | 
Microsemi |
| 描述： | PNP DARLINGTON POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 501
Devices
Qualified Level
JAN
2N6051
2N6052
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6051 2N6052 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation(1)
80
100
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VEBO
IB
80
100
5.0
0.2
12
IC
@ TC = +250C
@ TC = +1000C
150
75
W
W
0C
PT
Operating & Storage Junction Temperature Range
-55 to +175
Top, T
stg
THERMAL CHARACTERISTICS
Characteristics
TO-3*
(TO-204AA)
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1) Derate linearly at 1.0 W/0C above TC > +250C
1.0
R
qJC
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Symbol
Min.
Max.
Unit
Vdc
80
100
2N6051
2N6052
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 40 Vdc
VCE = 50 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
VCE = 100 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
1.0
1.0
mAdc
mAdc
mAdc
2N6051
2N6052
ICEO
ICEX
IEBO
0.5
0.5
2N6051
2N6052
2.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6051, 2N6052 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 3.0 Vdc
IC = 6.0 Adc, VCE = 3.0 Vdc
IC = 12 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
IC = 6.0 Adc, IB = 24 mAdc
Base-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
Base-Emitter Voltage
1,000
1,000
150
18,000
hFE
3.0
2.0
Vdc
VCE(sat)
4.0
2.8
Vdc
Vdc
VBE(sat)
VBE
IC = 6.0 Adc, VCE = 3.0 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
10
250
1,000
300
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz
Output Capacitance
½hfe½
hfe
pF
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
ton
2.0
10
ms
ms
VCC = 30 Vdc; IC = 5.0 Adc; IB = 20 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 5.0 Adc; IB1 = IB2 = 20 mAdc
toff
SAFE OPERATING AREA
DC Tests
TC = +250C + 100C -00, 1 Cycle, t ³ 1.0 s
Test 1
VCE = 12.5 Vdc, IC = 12 Adc
Test 2
VCE = 30 Vdc, IC = 5.0 Adc
Test 3
All Types
All Types
VCE = 70 Vdc, IC = 200 mAdc
VCE = 90 Vdc, IC = 155 mAdc
2N6051
2N6052
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
2N6052
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
SSDI
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