2N6031E3 [MICROSEMI]

Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,;
2N6031E3
型号: 2N6031E3
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

Power Bipolar Transistor, 16A I(C), 140V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,

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2N6031PBFREE

暂无描述

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0 CENTRAL

2N6032

Bipolar NPN Device in a Hermetically sealed TO3

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28 SEME-LAB

2N6032

HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

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29 ETC

2N6032

HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

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14 ETC

2N6032

HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

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35 GESS

2N6032

NPN POWER SILICON TRANSISTOR

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14 MICROSEMI

2N6032E3

Power Bipolar Transistor, 50A I(C), 90V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

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0 MICROSEMI

2N6033

NPN POWER SILICON TRANSISTOR

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10 MICROSEMI

2N6033

HIGH-CURRENT, HIGH-SPEED, HIGH-POWER TRANSISTORS

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10 NJSEMI

2N6033

HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

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47 GESS

2N6033

HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

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43 ETC

2N6033

Bipolar NPN Device

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36 SEME-LAB

2N6033

HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

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19 ETC

2N6033

Bipolar NPN Device

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13 SEME-LAB

2N6034

MIDIUM POWER DAR;OMGTONS

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84 STMICROELECTR