2N5179 [MICROSEMI]
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS; 射频与微波离散小功率三极管
| 型号： | 2N5179 |
| 厂家： | 
Microsemi |
| 描述： | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 文件： | 总5页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5179
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
·
·
·
·
Silicon NPN, TO-72 packaged VHF/UHF Transistor
Low Noise, NF = 4.5 dB (max) @ 200 MHz
High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
Characterized with S-Parameters
2
1. Emitter
2. Base
3. Collector
4. Case
1
3
4
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator
applications.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
12
Unit
Vdc
Vdc
Vdc
mA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
20
2.5
50
Thermal Data
P
D
300
1.71
mWatts
mW/ ºC
Total Device Dissipation @ T = 25ºC
Derate above 25ºC
A
MSC1305.PDF 10-25-99
2N5179
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
VCEO(sus)
BVCBO
BVEBO
ICBO
Test Conditions
Value
Typ.
Min.
Max.
Unit
Collector-Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0)
12
-
-
-
-
-
Vdc
Collector-Base Breakdown Voltage
20
2.5
-
-
-
Vdc
(IC=1.0 mAdc, IE=0)
Emitter Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0)
Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
.02
mA
(on)
HFE
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc)
25
-
-
-
-
250
1.0
0.4
-
VBE(sat)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Vdc
Vdc
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
-
DYNAMIC
Symbol
Test Conditions
Value
Typ.
Min.
Max.
Unit
fT
Current-Gain - Bandwidth Product
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
900
1500
-
-
MHz
CCB
Collector-base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
1.0
pF
-
MSC1305.PDF 10-25-99
2N5179
FUNCTIONAL
Symbol
Test Conditions
IC = 1.5 mAdc, VCE = 6.0
Value
Typ.
Min.
Max.
Unit
NF
Noise Figure (figure 1)
Vdc, f = 200 MHz
-
-
-
dB
4.5
GPE
Common-Emitter Amplifier
Power Gain (figure 1)
IC = 1.5 mAdc, VCE = 6.0
Vdc, f = 200 MHz
20
-
dB
POUT
(RL=50 OHMS)
PIN
(RS=50 OHMS)
Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications.
MSC1305.PDF 10-25-99
2N5179
FUNCTIONAL (CONT)
Symbol
Test Conditions
Value
Typ.
Min.
Max.
Unit
G
Maximum Unilateral Gain (1) IC = 5 mAdc, VCE = 6.0 Vdc,
f = 200 MHz
U max
-
17
18
12
dB
-
MAG
Maximum Available Gain
IC = 5 mAdc, VCE = 6.0 Vdc,
f = 200 MHz
-
-
dB
dB
-
-
2
Insertion Gain
IC = 5 mAdc, VCE = 6.0 Vdc,
f = 200 MHz
|S |
21
Note: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2)
Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA
(MHz)
|S11|
.471
|S21|
6.78
|S12|
.023
|S22|
.844
Ð f
-90
Ð f
122
Ð f
64
Ð f
100
200
300
400
500
600
700
800
900
1000
-51
-93
-134
-177
140
98
.314
.230
.171
.168
.149
.137
.119
.153
.171
-145
156
108
54
4.20
2.76
2.17
1.86
1.53
1.31
1.18
1.13
.979
100
91
86
79
71
67
64
58
49
.034
.043
.056
.062
.069
.073
.092
.101
.106
58
65
63
62
66
71
74
68
71
.780
.768
.756
.741
.740
.739
.744
.742
.749
-9
-72
54
-129
-174
122
8
-38
-82
MSC1305.PDF 10-25-99
2N5179
MSC1305.PDF 10-25-99
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