2N5031 [MICROSEMI]

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS; 射频与微波离散小功率三极管
2N5031
型号: 2N5031
厂家: Microsemi    Microsemi
描述:

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
射频与微波离散小功率三极管

晶体 小信号双极晶体管 射频小信号双极晶体管 微波 放大器
文件: 总4页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
140 COMMERCE DRIVE  
MONTGOMERYVILLE, PA  
18936-1013  
PHONE: (215) 631-9840  
FAX: (215) 631-9855  
2N5031  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
·
·
·
Silicon NPN, To-72 packaged VHF/UHF Transistor  
1.2 GHz Current-Gain Bandwidth Product @ 5mA IC  
Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz  
2
1. Emitter  
2. Base  
3. Collector  
4. Case  
1
3
4
TO-72  
DESCRIPTION:  
General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial  
equipment.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
10  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
15  
3.0  
20  
Thermal Data  
P
D
200  
1.14  
mWatts  
mW/ ºC  
Total Device Dissipation @ T = 25ºC  
Derate above 25ºC  
A
MSC1303.PDF 10-25-99  
2N5031  
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)  
STATIC  
(off)  
Symbol  
BVCEO  
BVCBO  
BVEBO  
ICBO  
Test Conditions  
Value  
Typ.  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
(IC = 1.0 mAdc, IB = 0)  
10  
-
-
-
Vdc  
Collector-Base Breakdown Voltage  
(IC= 0.01 mAdc, IE=0)  
15  
3.0  
-
-
-
Vdc  
Emitter-Base Breakdown Voltage  
(IE = 0.01mAdc, IC = 0)  
-
Vdc  
nA  
Collector Cutoff Current  
(VCE = 6.0 Vdc, IE = 0 Vdc)  
1.0  
10  
(on)  
HFE  
DC Current Gain  
(IC = 1.0 mAdc, VCE = 6.0 Vdc)  
25  
-
300  
-
DYNAMIC  
Symbol  
Test Conditions  
Value  
Typ.  
Min.  
Max.  
Unit  
fT  
Current-Gain - Bandwidth Product  
(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)  
1200  
-
2500  
MHz  
CCB  
Output Capacitance  
(IC = 1.0 mAdc, VCE = 6 Vdc, f = 450 MHz)  
2.5  
-
dB  
-
MSC1303.PDF 10-25-99  
2N5031  
FUNCTIONAL  
Symbol  
Test Conditions  
Value  
Typ.  
Min.  
Max.  
Unit  
G
Maximum Unilateral Gain (1) IC = 1 mAdc, VCE = 6Vdc,  
f = 400 MHz  
U max  
-
12  
dB  
-
MAG  
Maximum Available Gain  
IC = 1 mAdc, VCE = 6Vdc,  
f = 400 MHz  
-
12.4  
dB  
-
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA  
f
S11  
S21  
S12  
S22  
(MHz)  
|S11|  
.610  
|S21|  
23.8  
|S12|  
.026  
|S22|  
.522  
Ð f  
-137  
Ð f  
116  
Ð f  
46  
Ð f  
-78  
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
.659  
.671  
.675  
.677  
.678  
.677  
.679  
.678  
.682  
-161  
-171  
-178  
176  
172  
168  
184  
160  
156  
13.2  
9.0  
6.8  
5.5  
4.6  
4.0  
3.5  
3.1  
2.8  
98  
89  
83  
77  
72  
68  
64  
60  
56  
.033  
.040  
.047  
.055  
.064  
.073  
.082  
.092  
.102  
47  
51  
55  
58  
61  
62  
63  
64  
65  
.351  
.304  
.292  
.293  
.299  
.306  
.314  
.322  
.311  
-106  
-120  
-128  
-132  
-134  
-135  
-136  
-138  
-139  
MSC1303.PDF 10-25-99  
2N5031  
MSC1303.PDF 10-25-99  

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