2N4856_09 [MICROSEMI]
N-CHANNEL J-FET; N沟道J- FET
| 型号： | 2N4856_09 |
| 厂家： | 
Microsemi |
| 描述： | N-CHANNEL J-FET |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL J-FET
Equivalent To MIL-PRF-19500/385
DEVICES
LEVELS
MQ = JAN Equivalent
MX = JANTX Equivalent
MV = JANTXV Equivalent
2N4856 2N4858 2N4860
2N4857 2N4859 2N4861
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
2N4856
2N4859
2N4860
2N4861
Parameters / Test Conditions
Symbol
2N4857
2N4858
Unit
Gate-Source Voltage
VGS
VDS
-40
40
-30
30
V
V
Drain-Source Voltage
Drain-Gate Voltage
VDG
IG
40
30
V
Gate Current
50
mA
Power Dissipation
TA = +25°C (1)
PT
0.36
1.8
W
W
TC = +25°C (2)
Operating Junction & Storage Temperature Range
(1) Derate linearly 2.06 mW/°C for TA > +25°C.
(2) Derate linearly 10.3 mW/°C for TC > +25°C.
Tj, Tstg
-65 to + 200
°C
TO-18
(TO-206AA)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate-Source Breakdown Voltage
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
-40
-30
VDS = 0, IG = -1.0μA dc
V(BR)GSS
Vdc
Gate-Source “Off” State Voltage
VDS = 15V dc
ID = 0.5ηA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
-4.0
-2.0
-0.8
-10
-6.0
-4.0
VGS(off)
Vdc
Gate Reverse Current
VDS = 0, VGS = -20V dc
2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
-0.25
-0.25
IGSS
ηA
ηA
V
DS = 0, VGS = -15V dc
Drain Current Cutoff
GS = -10V dc, VDS = 15V dc
Drain Current Zero Gate Voltage
VGS = 0, VDS = 15V dc 2N4856, 2N4859
ID(off)
0.25
V
50
20
8.0
175
100
80
IDSS
VDS(on)
rds(on)
mA
Vdc
Ω
2N4857, 2N4860
2N4858, 2N4861
Drain-Source “On” State Voltage
VGS = 0, ID = 20mA dc
VGS = 0, ID = 10mA dc
VGS = 0, ID = 5.0mA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
0.75
0.50
0.50
Static Drain – Source “On” State Resistance
VGS = 0, ID = 1.0mA dc
25
40
60
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
T4-LDS-0002 Rev. 2 (090603)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL J-FET
Equivalent To MIL-PRF-19500/385
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal, Common Short-Circuit Reverse Transfer Capacitance
VGS = -10V dc, VDS = 0, f = 1.0MHz
C1 = 0.1μF, L1 = L2 ≥ 500μH
Crss
8.0
pF
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = -10V dc, VDS = 0, f = 1.0MHz
C1 = 0.1μF, C2 = 20.1µF
L1 = L2 ≥ 500μH
Ciss
18
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Delay Time
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
6
6
10
td(on)
ηs
Rise Time
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
3
4
10
See Figure 3 of
MIL-PRF-19500/385
tr
ηs
ηs
Turn-Off Delay Time
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
25
50
100
td(off)
T4-LDS-0002 Rev. 2 (090603)
Page 2 of 2
相关型号：
2N4857A-2
Power Field-Effect Transistor, 40ohm, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
VISHAY
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