2N4033 [MICROSEMI]
PNP BIPOLAR TRANSISTOR; PNP双极晶体管
| 型号： | 2N4033 |
| 厂家： | 
Microsemi |
| 描述： | PNP BIPOLAR TRANSISTOR |
| 文件： | 总2页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
580 Pleasant St.
Watertown, MA 02172
PH: (617) 924-0404
FAX: (617) 924-1235
2N4033
Features
80 Volts
1.0 Amps
·
·
·
·
Meets MIL-S-19500/512
Collector-Base Voltage 80V
Collector Current: 1.0 A
Fast Switching 250 nS
PNP
BIPOLAR
TRANSISTOR
Maximum Ratings
RATING
SYMBOL
MAX.
UNIT
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current--Continuous
Total Device Dissipation
@ TA = 25oC
VCEO
VCBO
VEBO
IC
-80
-80
-5.0
-1.0
Vdc
Vdc
Vdc
Adc
PD
0.8
4.56
W
mW/oC
Derate above 25oC
Total Device Dissipation
PD
@ TC = 25oC
4.0
22.8
W
mW/oC
Derate above 25oC
oC
Operating Temperature Range
TJ
-55 to
+200
-55 to
+200
140
oC
Storage Temperature Range
TS
oC/W
oC/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
RqJA
RqJC
25
Mechanical Outline
Datasheet# MSC0283A 5/23/97
2N4033
Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Off Characteristics
-80
-80
-5.0
--
--
--
V
V
V
Collector-Emitter Breakdown Voltage(1) (I C = -10 mA)
Collector-Base Breakdown Voltage (I C = -10 mA)
Emitter-Base Breakdown Voltage (I E = -10 uA)
Collector Cutoff Current
BVCEO
BVCBO
BVEBO
ICBO
--
--
-10
-25
nA
uA
(VCB = -60 V)
(VCB = -60 V, TA = 150oC)
--
-25
nA
--
Emitter Cutoff Current (VEB = -3.0 V)
D.C. Current Gain
IEBO
hFE
(IC = -500 mA, VCE = -5.0 V @ -55oC)(1)
(IC = -100 mA, VCE = -5.0 V)
30
50
100
70
--
--
300
--
(IC = -100 mA, VCE = -5.0 V)(1)
(IC = -500 mA, VCE = -5.0 V)(1)
(IC = -1.0 A, VCE = -5 V)(1)
25
--
Collector-Emitter Saturation Voltage(1)
(IC = -150 mA, IB = -15 mA)
V
VCE(Sat)
--
--
--
-0.15
-0.50
1.0
(IC = -500 mA, IB = -50 mA)
(Ic = -1.0A, IB = -100mA)
Base-Emitter Saturation Voltage(1)
(IC = -150 mA, IB = -15 mA)
Base-Emitter On Voltage
(IC = -500 mA, VCE = - 0.5 V)(1)
Output Capacitance
(VCE = -10 V, 100kHz < f < 1.0MHz)
Input Capacitance
(VCE = -0.5 V, 100kHz < f < 1.0 MHz)
Small Signal Current Gain
(IC = -50 mA, VCE = -10 V, f = 100 MHz)
Switching Speeds
V
V
VBE(Sat)
VBE(Sat)
COBO
CIBO
--
--
-0.9
-1.2
20
--
pF
pF
--
80
/hfe/
1.5
6.0
ns
Delay Time (Ic = 500mAdc; IB = 50mAdc)
Rise Time (Ic = 500mAdc; IB = 50mAdc)
Storage Time (Ic = 500mAdc; IB1 =IB2 = 50mAdc)
Fall Time (Ic = 500mAdc; IB1 = IB2 = 50mAdc)
--
--
--
--
15
25
175
35
td
tr
ts
tf
Datasheet# MSC0283A 5/23/97
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