2N3846E3 [MICROSEMI]
Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,;
| 型号： | 2N3846E3 |
| 厂家： | 
Microsemi |
| 描述： | Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 412
Devices
Qualified Level
JAN
2N3846
2N3847
JANTX
JANTXV
MAXIMUM RATINGS
2N3846 2N3847
Ratings
Symbol
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
200
300
300
400
VCEO
VCBO
VEBO
IC
Vdc
10
Vdc
20
4.0
150
Adc
W
W
0C
Total Power Dissipation
@ TA = +250C (1)
@ TC = +1000C (2)
PT
Operating & Storage Temperature Range
-65 to +200
Top,
T
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
Max.
Unit
0C/W
TO-63*
0.5
R
qJC
1) Derate linearly 26.6 mW/0C to +1750C
2) Derate linearly 2 W/0C to +1750C
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; IB = 0
Symbol
Min.
Max.
Unit
Vdc
2N3846
2N3847
V(BR)
CEO
200
300
Collector-Emitter Cutoff Current
VCE = 300 Vdc; VBE = 0
VCE = 400 Vdc; VBE = 0
2N3846
2N3847
mAdc
ICES
2
2
Collector-Emitter Cutoff Current
VCE = 200 Vdc; IB = 0
VCE = 300 Vdc; IB = 0
2N3846
2N3847
mAdc
ICEO
5
5
Emitter-Base Cutoff Current
VBE = 10 Vdc; IC = 0
IEBO
mAdc
250
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3846, 2N3847 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 3.0 Vdc
IC = 5 Adc; VCE = 3.0 Vdc
IC = 10 Adc; VCE = 3.0 Vdc
Base-Emitter Sustaining Voltage
VCE = 3 Vdc; IC = 10 Adc
Base-Emitter Saturated Voltage
IB = 1.6 Adc; IC = 10 Adc
Collector-Emitter Saturated Voltage
IB = 1.6 Adc; IC = 10 Adc
70
40
12
hFE
240
60
Vdc
Vdc
Vdc
VBE
1.20
1.30
0.75
VBE(sat)
VCE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
½hfe½
IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 5 Adc, VCE = 10 Vdc, f = 1 kHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
10
50
35
hfe
250
750
pF
Cobo
SWITCHING CHARACTERISTICS
Turn-On Time
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;
IB1 = 2 Adc; IB2 = -2 Adc; RL = 15W
Turn-Off Time
ton
ms
ms
4
7
toff
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;
IB1 = 2 Adc; IB2 = 2 Adc; RL = 15W
SAFE OPERATING AREA
DC Tests
TC = +1000C; VCE = 0 Vdc, IC = 0 Adc (See Figure 3 on Mil-PRF-19500/412)
Test 1
VCE = 7.5 Vdc; IC = 20 Adc; tp = 1.0 s; 1 cycle
Test 2
VCE = 200 Vdc; IC = 100 mAdc; tp = 1.0 s, 1 cycle
Test 3
VCE = 58 Vdc; IC = 1.0 Adc; tp = 1.0 s, 1 cycle
Burnout by Pulsing (2N3847 only)
TC = +1000C; VCE = 300 Vdc; IC = 20 mAdc; tp = 1.0 s, 1 cycle
Unclamped Inductive Sweep
TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 4 on Mil-PRF-19500/412)
Clamped Inductive Sweep
TC = +1000C; IC = 20 Adc; IB = 2 Adc (See Figure 5 on Mil-PRF-19500/412)
3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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