2N3501UB [MICROSEMI]

RADIATION HARDENED; 抗辐射
2N3501UB
型号: 2N3501UB
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

RADIATION HARDENED
抗辐射

文件: 总3页 (文件大小:107K)
下载:  下载PDF数据表文档文件

2N3502

Medium Current General Purpose Amplifiers and Switches

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25 RAYTHEON

2N3502

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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29 SEME-LAB

2N3502

Small Signal Transistors

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26 CENTRAL

2N3502

SI PNP LP HF BJT MANUFARURER

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12 NJSEMI

2N3502

Trans GP BJT PNP 45V 3-Pin TO-39

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0 NJSEMI

2N3502

Transistor,

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0 FAIRCHILD

2N3502LEADFREE

Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

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0 CENTRAL

2N3502SP

Trans GP BJT PNP 45V 3-Pin TO-39

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0 NJSEMI

2N3503

SI PNP LP HF BJT MANUFACTURER

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9 NJSEMI

2N3503

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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33 SEME-LAB

2N3503

Small Signal Transistors

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27 CENTRAL

2N3503

Medium Current General Purpose Amplifiers and Switches

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37 RAYTHEON

2N3503

Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN

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0 FAIRCHILD

2N3503

RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-39, TO-39, 3 PIN

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0 SSDI

2N3504

Medium Current General Purpose Amplifiers and Switches

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31 RAYTHEON