2N3251AUBE3 [MICROSEMI]

Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3;


型号：	2N3251AUBE3
厂家：	Microsemi
描述：	Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 CD 晶体管
文件：	总4页 (文件大小：129K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON

LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/323

DEVICES

LEVELS

2N3250A

2N3251A

JAN

2N3250AUB

2N3251AUB

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Vdc

5.0

Vdc

Collector Current

200

mAdc

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽¹⁾

0.36

1.2

P_T

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

TO-39 (TO-205AD)

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

(1)

Thermal Resistance, Junction-to-Case

150

°C/W

R_θJC

Note:

1/ Consult 19500/323 for thermal curves

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

Symbol

V_(BR)CEO

I_CEX

Min.

Max.

Unit

Vdc

Collector-Emitter Cutoff Voltage

_BE= 3.0Vdc, V_CE= 40Vdc

ηAdc

μAdc

UB Package

V_BE= 3.0Vdc, V_CE= 40Vdc

T_A= 150°C

Collector-Base Cutoff Current

μAdc

ηAdc

_CB= 60Vdc

I_CBO

V_CB= 40Vdc

Emitter-Base Cutoff Current

I_EBO

μAdc

ηAdc

_EB= 5.0Vdc

Collector-Emitter Cutoff Voltage

I_BEX

_BE= 3.0Vdc, V_CE= 40Vdc

T4-LDS-0093 Rev. 2 (101243)

Page 1 of 4

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions

ON CHARACTERTICS ⁽²⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 0.1mAdc, V_CE= 1.0Vdc

2N3250A, AUB

2N3251A, AUB

I_C= 1.0mAdc, V_CE= 1.0Vdc

I_C= 10mAdc, V_CE= 1.0Vdc

I_C= 50mAdc, V_CE= 1.0Vdc

2N3250A, AUB

2N3251A, AUB

2N3250A, AUB

2N3251A, AUB

100

150

300

h_FE

2N3250A, AUB

2N3251A, AUB

I_C= 1.0mAdc, V_CE= 1.0Vdc

T_A= -55°C

2N3250A, AUB

2N3251A, AUB

Collector-Emitter Saturation Voltage

I_C= 10mAdc, I_B= 1.0mAdc

I_C= 50mAdc, I_B= 5.0mAdc

0.25

0.50

V_CE(sat)

Vdc

Base-Emitter Saturation Voltage

I_C= 10mA, I_B= 1.0mAdc

I_C= 50mA, I_B= 5.0mAdc

0.60

0.90

1.20

V_BE(sat)

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 1.0mAdc, V_CE= 10Vdc, f = 1.0kHz 2N3250A, AUB

2N3251A, AUB

100

200

400

h_fe

Magnitude of Common Emitter Small-Signal Short-Circuit Forward

Current Transfer Ratio

|h_fe|

I_C= 10mAdc, V_CE= 20Vdc, f = 100kHz

2N3250A, AUB

2N3251A, AUB

2.5

3.0

9.0

Output Capacitance

C_obo

6.0

8.0

V_CB= 10Vdc, I_E= 0, 100 kHz ≤ f ≤ 1.0MHz

Input Capacitance

V_EB= 1.0Vdc, I_C= 0, 100 kHz ≤ f ≤ 1.0MHz

C_ibo

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Turn-On Time

V_CC= 3.0Vdc; I_C= 10mAdc; I_B1= 1.0mAdc

Symbol

Min.

Max.

Unit

ηs

t_on

Turn-Off Time

V_CC= 3.0Vdc; IC = 10mAdc; I_B1= I_B2

1.0mAdc

2N3250A, AUB

2N3251A, AUB

250

300

t_off

ηs

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

T4-LDS-0093 Rev. 2 (101243)

Page 2 of 4

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

Dimensions

Inches Millimeters

Symbol

Notes

Min Max Min

.178 .195 4.52

.170 .210 4.32

.209 .230 5.31

Max

4.95

5.33

5.74

.100TP

2.54 TP

.016 .021 0.41

0.53

7, 8

.500 .750 12.70 19.05

.016 .019 0.41

.050

0.48

1.27

.250

.100

6.35

2.54

.040

1.02

1.22

1.17

0.25

3, 4

.028 .048 0.71

.036 .046 0.91

.010

45° TP

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)

radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by

direct methods or by the gauge and gauging procedure shown in figure 2.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled

in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions (similar to TO-18).

T4-LDS-0093 Rev. 2 (101243)

Page 3 of 4

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Dimensions

Ltr.

Inches

Millimeters

Note

Ltr.

Inches

Min

.035

0.71

.016

Millimeters

Note

Min Max Min Max

.046 .056 1.17 1.42

.115 .128 2.92 3.25

.085 .108 2.16 2.74

Max

.039

.079

.024

.008

.012

.022

Min

Max

0.99

2.01

0.61

0.20

0.31

0.56

LL₁

LL₂

LS₁

LS₂

r₁

r₂

0.89

1.80

0.41

.128

.108

3.25

2.74

.022 .038 0.56 0.96

.017 .035 0.43 0.89

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions, surface mount (UB version).

T4-LDS-0093 Rev. 2 (101243)

Page 4 of 4

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