2N2906AUAE3 [MICROSEMI]
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4;
| 型号： | 2N2906AUAE3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-4 |
| 文件： | 总6页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
2N2906A
2N2907A
2N2906AL
2N2906AUA
2N2906AUB
2N2907AL
2N2907AUA
2N2907AUB
2N2906AUBC 2N2907AUBC
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
VCBO
VEBO
IC
60
60
Vdc
Vdc
Vdc
mAdc
W
Collector-Base Voltage
Emitter-Base Voltage
5.0
Collector Current
600
TO-18 (TO-206AA)
2N2906A, 2N2907A
(1)
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
PT
0.5
Top, Tstg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
(1)
Thermal Resistance, Junction-to-Ambient
325
°C/W
RθJA
4 PIN
1. See MIL-PRF-19500/291 for derating curves.
2N2906AUA, 2N2907AUA
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
60
Vdc
Collector-Base Cutoff Current
10
10
μAdc
ηAdc
3 PIN
ICBO
VCB = 60Vdc
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
VCB = 50Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
10
50
μAdc
ηAdc
IEBO
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
ICES
50
ηAdc
VCE = 50Vdc
T4-LDS-0055 Rev. 4 (100247)
Page 1 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (2)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
75
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
175
450
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
hFE
IC = 150mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
120
300
IC = 500mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
50
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
Vdc
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.4
1.6
Base-Emitter Voltage
VBE(sat)
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
0.6
1.3
2.6
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
hfe
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
|hfe|
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
2.0
Output Capacitance
Cobo
Cibo
8.0
30
pF
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
See MIL-PRF-19500/291
ton
45
ηs
Turn-Off Time
See MIL-PRF-19500/291
toff
300
ηs
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
T4-LDS-0055 Rev. 4 (100247)
Page 2 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
Dimensions
Inches Millimeters
Symbol
Note
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length
of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)
below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to
tab at MMC.
Min
Max
.195
.210
.230
Min
4.52
4.32
5.31
2.54 TP
0.41
Max
4.95
5.33
5.84
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
.178
.170
.209
.100 TP
6
7,8
.016
.500
.016
.021
.750
.019
.050
0.53
12.70 19.05 7,8,13
0.41
0.48
1.27
7,8
7,8
7,8
7. Dimension LU applies between L1 and L2. Dimension LD applies
between L2 and LL minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
.250
.100
6.35
2.54
.030
.048
.046
.010
0.76
1.22
1.17
0.25
5
3,4
3
10
6
8. All three leads.
.028
.036
0.71
0.91
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
α
45° TP
45° TP
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.
and 1.75 inches (44.45 mm) max.
FIGURE 1. Physical dimensions (similar to TO-18)
T4-LDS-0055 Rev. 4 (100247)
Page 3 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NOTES:
Dimensions
1. Dimensions are in inches.
Inches
Min
.215
Millimeters
Symbol
Note
2. Millimeters are given for general information only.
3. Dimension CH controls the overall package thickness. When a
window lid is used, dimension CH must increase by a minimum of
.010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius) may vary at the
manufacturer's option, from that shown on the drawing.
5. Dimensions LW2 minimum and L3 minimum and the appropriate
castellation length define an unobstructed three-dimensional space
traversing all of the ceramic layers in which a castellation was
designed. (Castellations are required on the bottom two layers,
optional on the top ceramic layer.) Dimension “LW2” maximum and
“L3” maximum define the maximum width and depth of the
castellation at any point on its surface. Measurement of these
dimensions may be made prior to solder dipping.
Max
.225
.225
.155
.155
.075
.007
.042
.048
.088
.055
.028
.022
Min
5.46
Max
5.71
5.71
3.93
3.93
1.90
0.18
1.07
1.22
2.23
1.39
0.71
0.56
BL
BL2
BW
BW2
CH
.145
3.68
.061
.003
.029
.032
.072
.045
.022
.006
1.55
0.08
0.74
0.81
1.83
1.14
0.56
0.15
3
5
L3
LH
LL1
LL2
LS
LW
LW2
5
6. The co-planarity deviation of all terminal contact points, as defined
by the device seating plane, shall not exceed .006 inch (0.15mm) for
solder dipped leadless chip carriers.
Pin no.
Transistor Collector
1
2
3
Base
4
N/C
Emitter
7. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
FIGURE 2. Physical dimensions, surface mount (UA version)
T4-LDS-0055 Rev. 4 (100247)
Page 4 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
UB
Dimensions
Dimensions
Symbol
Inches
Min
.046
.115
.085
Millimeters
Min Max
Note
Inches
Min
.036
.071
.016
Millimeters
Symbol
Note
Max
.056
.128
.108
.128
.108
.038
.035
Max
.040
.079
.024
.008
.012
.022
Min
0.91
1.81
0.41
Max
1.02
2.01
0.61
.203
.305
.559
BH
BL
BW
CL
CW
LL1
LL2
1.17
2.92
2.16
1.42
3.25
2.74
3.25
2.74
0.96
0.89
LS1
LS2
LW
r
r1
r2
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimensions, surface mount (UB version)
T4-LDS-0055 Rev. 4 (100247)
Page 5 of 6
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
UBC
Dimensions
Dimensions
Symbol
Inches
Min
.046
.115
.085
Millimeters
Min Max
Note
Inches
Min
.036
.071
.016
Millimeters
Symbol
Note
Max
.071
.128
.108
.128
.108
.038
.035
Max
.040
.079
.024
.008
.012
.022
Min
0.91
1.81
0.41
Max
1.02
2.01
0.61
.203
.305
.559
BH
BL
BW
CL
CW
LL1
LL2
1.17
2.92
2.16
1.80
3.25
2.74
3.25
2.74
0.96
0.89
LS1
LS2
LW
r
r1
r2
.022
.017
0.56
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metalized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 4. Physical dimensions, surface mount (UBC version, ceramic lid)
T4-LDS-0055 Rev. 4 (100247)
Page 6 of 6
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