2N2609E3 [MICROSEMI]
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN;型号: | 2N2609E3 |
厂家: | Microsemi |
描述: | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206AA, TO-18, 3 PIN |
文件: | 总1页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/296
DEVICES
LEVELS
2N2609
MQ = JAN Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Gate-Source Voltage
Power Dissipation(1)
Symbol
VGSS
Value
30
Unit
V
TA = +25°C
PD
300
mW
°C
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.71 mW/°C for TA > +25°C.
Top, Tstg
-65 to + 200
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate-Source Breakdown Voltage
V(BR)GSS
30
Vdc
VDS = 0, IG = 1.0μA dc
TO-18
(TO-206AA)
Gate Reverse Current
VDS = 0, VGS = 30V dc
VDS = 0, VGS = 15V dc
30
22.5
IGSS
ηA
Drain Current
IDSS
-2.0
-10.0
6.0
mA
V
GS = 0V dc, VDS = 5.0V dc
Gate-Source Cutoff Voltage
VDS = 5.0V, ID = 1.0μA dc
VGS(off)
0.75
Vdc
Magnitude of Small-Signal, Common-Source
Short-Circuit Forward Transfer Admittance
VGS = 0, VDS = 5.0V dc, f = 1.0kHz
|Yfs2
|
2,000
6,250
10
μmho
Small-Signal, Common-Source Short-Circuit
Input Capacitance
Ciss
pF
VGS = 0, VDS = 5.0V dc, f = 1.0MHz
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0V dc, f = 1.0kHz
BW = 16%, RG = 1.0 megohms
egen = 1.82mV dc, RL = 220Ω
NF
3.0
dB
T4-LDS-0003 Rev. 1 (063374)
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相关型号:
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Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18
CENTRAL
2N2619
Silicon Controlled Rectifier, 7.4A I(T)RMS, 4700mA I(T), 600V V(DRM), 1 Element, TO-64, TO-64, 2 PIN
ASI
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