1N937TR [MICROSEMI]
Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN;型号: | 1N937TR |
厂家: | Microsemi |
描述: | Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN 测试 二极管 |
文件: | 总3页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N935 thru 1N940B-1
9.0 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The popular 1N935 thru 1N940B series of Zero-TC Reference Diodes
provides a selection of 9.0 V nominal voltages and temperature coefficients
to as low as 0.0002%/oC for minimal voltage change with temperature when
operated at 7.5 mA. These glass axial-leaded DO-7 reference diodes are
also available in JAN, JANTX, and JANTXV military qualifications.
Microsemi also offers numerous other Zener Reference Diode products for
a variety of other voltages from 6.2 V to 200 V.
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.0V +/- 5%
1N935B, 937B, 938B, 939B, 940B also have military
qualification to MIL-PRF-19500/156 up to the
JANTXV level by adding JAN, JANTX, or JANTXV
prefixes to part numbers as well as “-1” suffix, e.g.
JANTX1N938B-1, etc.
Internal metallurgical bonds
JANS Equivalent available via SCD
Radiation Hardened devices available by changing
“1N” prefix to “RH”, e.g. RH938B, RH 940B, etc.
Also consult factory for “RH” data sheet brochure
•
•
•
•
Provides minimal voltage changes over a broad
temperature range
For instrumentation and other circuit designs
requiring a stable voltage reference
Maximum temperature coefficient selections
available from 0.01%/ºC to 0.0002%/ºC
Tight voltage tolerances available with nominal
voltage of 9.2 V by adding tolerance 1%, 2%, 3%,
etc. after the part number for further identification,
e.g. 1N938B-2%, 1N940B-1%, 1N939B-1-1%, etc.
•
•
•
•
•
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & StorageTemperature: -65oC to +175oC
•
•
CASE: Hermetically sealed glass case with DO-7
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 50 mA. NOTE: For optimum
voltage-temperature stability, IZ = 7.5 mA (less than
75 mW in dissipated power)
(DO-204AA) package
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
•
•
•
Solder temperatures: 260 oC for 10 s (maximum)
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
•
WEIGHT: 0.2 grams.
See package dimensions on last page
Copyright 2003
Microsemi
Page 1
8-21-2003 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N935 thru 1N940B-1
9.0 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
VOLTAGE
ZENER
VOLTAGE
VZ @ IZT
(Notes
MAXIMUM
ZENER
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
TEMPERATURE
STABILITY
(Notes 3 & 4)
∆VZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
ZENER
TEST
JEDEC
TYPE
TEMPERATURE
RANGE
IMPEDANCE
(Note 2)
CURRENT
IZT
NUMBERS
(Notes
α
VZ
1, 4 & 5)
ZZT @ IZT
MAXIMUM
1 & 5)
VOLTS
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
mV
67
139
184
33
69
92
13
27
37
6
oC
%/oC
0.01
1N935
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
0 to +75
1N935A
1N935B
1N936
-55 to +100
-55 to +150
0 to +75
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
0.0005
0.0002
0.0002
0.0002
1N936A
1N936B
1N937
-55 to +100
-55 to +150
0 to +75
1N937A
1N937B
1N938
-55 to +100
-55 to +150
0 to +75
1N938A
1N938B
1N939
13
18
3
-55 to +100
-55 to +150
0 to +75
1N939A
1N939B
1N940
7
-55 to +100
-55 to +150
0 to +75
9
1.3
2.7
3.7
1N940A
1N940B
-55 to +100
-55 to +150
*JEDEC Registered Data.
NOTES:
1. When ordering devices with tighter tolerances than specified, use a nominal voltage of 9.2V and add a hyphenated suffix
to the part number for desired tolerance at the end of the part number, e.g. 1N938B-2%, 1N939B-1%, 1N939B-1-1%, etc.
2. Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
4. Voltage measurements to be performed 15 seconds after application of dc current.
5. The 1N935B, 937B, 938B, 939B, 940B also have military qualification to MIL-PRF-19500/156 up to the JANTXV level by
adding JAN, JANTX, or JANTXV prefixes to part numbers as well as “-1” suffix, e.g. JANTX1N938B-1, etc.
6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH938A instead of 1N938A.
GRAPHS
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of +/-
0.005%/oC. To obtain the typical Temperature Coefficient limits for
this same diode operated at a current of 6.0mA, the new TC limits
(%/oC) can be estimated using the graph in FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0009%.oC. The algebraic sum of +/-
0.005%oC and –0.0009%/oC gives the new estimated limits of
+0.0041%/oC and -0.0059%/oC.
IZ – Operating Current (mA)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
Copyright 2003
Microsemi
Page 2
8-21-2003 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N935 thru 1N940B-1
9.0 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
This curve in Figure 2 illustrates the change of diode
voltage arising from the effect of impedance. It is in
effect an exploded view of the zener operating
region of the I-V characteristic.
In conjunction with Figure 1, this curve can be used
to estimate total voltage regulation under conditions
of both varying temperature and current.
I – OpFerIaGtinUgRCEurr2ent (mA)
Z
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT.
DIMENSIONS
All dimensions in INCH
mm
Copyright 2003
8-21-2003 REV A
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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