1N6625E3 [MICROSEMI]
Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N6625E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件： | 总4页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
Package “A”
Axial
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular JEDEC registered 1N6620 to 1N6625 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
•
Ultrafast recovery rectifier series 200 to 1000 V
•
•
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
•
•
High forward surge current capability
Low thermal resistance
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
•
Controlled avalanche with peak reverse power
•
•
Further options for screening in accordance with
MIL-PRF-19500 for JANS by using a “MSP” prefix,
e.g. MSP6620, MSP6624, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N6620US thru 1N6625US)
capability
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Junction Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
Storage Temperature: -65oC to +175oC
with Tungsten slugs
Peak Forward Surge Current @ 25oC: 20 Amps
(except 1N6625 which is 15 Amps)
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
•
•
•
•
•
Note: Test pulse = 8.3 ms, half-sine wave.
•
•
Average Rectified Forward Current (IO) at TL= +55oC
(L=.375 inch from body):
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
See package dimensions on last page
(Derate linearly at 0.833%/oC for TL> +55oC)
Average Rectified Forward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal
resistance from mounting point to ambient is
sufficiently controlled where TJ(max) is not exceeded.)
•
•
•
Thermal Resistance L= 0.375 inch (RθJL): 38oC/W
Capacitance at VR= 10 V: 10 pF
Solder temperature: 260oC for 10 s (maximum)
Copyright 2004
Microsemi
Page 1
12-03-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
TYPE
MINIMUM
BREAK-
DOWN
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
MAXIMUM
REVERSE
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
MAXIMUM
REVERSE
PEAK
RECOVERY RECOVERY
CURRENT VOLTAGE
RM (rec) FRM Max
F = 0.5A
FORWARD
NUMBER
REVERSE
VOLTAGE
VRWM
RECOVERY
TIME (HIGH
CURRENT)
CURRENT IR
@
VOLTAGE
VR
VF @ IF
I
V
I
VRWM
I
F = 2A,
IR
TA=25oC TA=150oC
I
R = 50µA
t
t
rr
rr
100A/µs
t
fr
=12ns
Note 1
ns
Note 2
ns
Note 2
A
V
V @ A
V @ A
V
V
µA
0.5
0.5
0.5
0.5
0.5
µA
150
150
150
150
150
200
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
220
440
660
880
990
1100
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.55V @ 1.0A 1.80V @ 1.5A
1.55V @ 1.0A 1.80V @ 1.5A
1.75V @ 1.0A 1.95V @ 1.5A
200
400
600
800
900
30
45
3.5
3.5
3.5
4.2
4.2
5.0
12
12
12
18
18
30
45
30
45
50
60
50
60
NOTE 1: Low Current Reverse Recovery Time T1e0s0t0Condi1ti.o0ns: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD3-7050,
60
80
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/µs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VRWM
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
C
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1
Typical Forward Current
vs
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Forward Voltage
Copyright 2004
Microsemi
Page 2
12-03-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
FIGURE 3
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
Typical Reverse Current vs.
Applied Reverse Voltage
FIGURE 5
FIGURE 6
Average Forward Current vs.
Average Forward Current vs
Lead Temperature (50% Duty Cycle, Square Wave)
Lead Temperature (50% Duty Cycle, Square Wave)
Copyright 2004
Microsemi
Page 3
12-03-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
FIGURE 7
FIGURE 8
Forward Pulse Current vs.
Pulse Duration
Reverse Pulse Power vs.
Pulse Duration
PACKAGE DIMENSIONS
Lead tolerance = +0.002/-0.003 inches
Copyright 2004
Microsemi
Scottsdale Division
Page 4
12-03-2004 REV A
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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