1N5634AE3 [MICROSEMI]

Trans Voltage Suppressor Diode, 1500W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN;
1N5634AE3
型号: 1N5634AE3
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 1500W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
1500 WATT UNIDIRECTIONAL  
TRANSIENT VOLTAGE SUPPESSOR  
Qualified per MIL-PRF-19500/500  
DEVICES  
LEVELS  
* 1N5629 thru 1N5665  
JAN  
1N5629A thru 1N5665A  
JANTX  
JANTXV  
* Commercial only  
DESCRIPTION  
This popular Transient Voltage Suppressor (TVS) series for 1N5629 thru 1N5665A are  
JEDEC registered selections for unidirectional devices. All have the same high Peak Pulse  
Power rating of 1500 W with extremely fast response times. They are also available in  
military qualified selections as described in the Features section herein. They are most  
often used for protecting against transients from inductive switching environments, induced  
RF effects, or induced secondary lightning effects as found in lower surge levels of  
IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical  
systems. Since their response time is virtually instantaneous, they can also protect from  
ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  
IMPORTANT: For the most current data, consult MICROSEMI’s website:  
http://www.microsemi.com  
DO-13 (DO-202AA)  
FEATURES  
¾ Unidirectional TVS series for thru-hole mounting  
¾ Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1)  
¾ Clamps transient in less than 100 pico seconds  
¾ Working voltage (VWM) range 5 V to 171 V  
¾ Hermetic sealed DO-13 metal package  
¾ JAN/TX/TXV military qualifications also available for the tighter tolerance “A”  
suffix devices per MIL-PRF-19500/500 by adding the JAN, JANTX, or JANTXV  
prefix, e.g. JANTXV1N5629A, etc.  
¾ For bidirectional TVS in the same DO-13 package, see separate data sheet for the  
1N6036 – 1N6072A series (also military qualified)  
¾ Surface mount equivalent packages also available as SMCJ5.0 - SMCJ170CA or  
SMCG5.0 – SMCG170CA in separate data sheet (consult factory for other surface  
mount options)  
¾ Plastic axial-leaded equivalents available in the 1N6267 – 1N6303A series in  
separate data sheet  
T4-LDS-0096 Rev. 2 (101572)  
Page 1 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
APPLICATIONS / BENEFITS  
¾ Protection from switching transients and induced RF  
¾ ESD & EFT protection per IEC 61000-4-2 and -4-4  
¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
Class 1: 1N5629 to 1N5665A  
Class 2: 1N5629 to 1N5663A  
Class 3: 1N5629 to 1N5655A  
Class 4: 1N5629 to 1N5648A  
¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
Class 1: 1N5629 to 1N5658A  
Class 2: 1N5629 to 1N5651A  
Class 3: 1N5629 to 1N5643A  
Class 4: 1N5629 to 1N5636A  
¾ Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:  
Class 2: 1N5629 to 1N5642A  
Class 3: 1N5629 to 1N5635A  
¾ Inherently radiation hard per Microsemi MicroNote 050  
MAXIMUM RATINGS  
¾ 1500 Watts for 10/1000 μs with repetition rate of 0.01% or less* at lead temperature (TL) 25oC (see Figs 1, 2, & 4)  
¾ Operating & Storage Temperatures: -65o to +175oC  
¾ THERMAL RESISTANCE: 50oC/W junction to lead at 0.375 inches (10 mm) from body or 110oC/W junction to  
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz) and track width 1 mm, length 25 mm  
¾ DC Power Dissipation*: 1 Watt at TL +125oC 3/8” (10 mm) from body (see derating in Fig 3 and note below)  
¾ Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25oC  
¾ Solder Temperatures: 260 o C for 10 s (maximum)  
MECHANICAL AND PACKAGING  
¾ CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass  
¾ FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026  
¾ POLARITY: Cathode connected to case and polarity indicated by diode symbol  
¾ MARKING: Part number and polarity diode symbol  
¾ WEIGHT: 1.4 grams. (Approx)  
¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)  
¾ See package dimension on last page  
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated  
standoff voltage  
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).  
T4-LDS-0096 Rev. 2 (101572)  
Page 2 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
ELECTRICAL CHARACTERISTICS @ TA = 25oC  
Breakdown  
Voltage  
V(BR) @ I(BR)  
Breakdown  
Current  
I(BR)  
Rated  
Standoff  
Voltage  
VWM  
Maximum  
Standby  
Current  
ID @ VWM  
Maximum  
Clamping  
Voltage  
Maximum  
Peak Pulse  
Current  
IPP  
Maximum  
Temperature  
Coefficient of  
V(BR) αV(BR)  
JEDEC  
Type  
No.*  
VC @ IPP  
Min.  
Max.  
V
V
mA  
10  
10  
10  
10  
10  
10  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
V
A
%/oC  
.057  
.057  
.061  
.061  
.065  
.065  
.068  
.068  
.073  
.073  
.075  
.075  
.078  
.078  
.081  
.081  
.084  
.084  
.086  
.086  
.088  
.088  
.090  
.090  
.092  
.092  
.094  
.094  
.096  
.096  
.097  
.097  
.098  
.098  
.099  
.099  
.100  
.100  
.101  
.101  
.101  
.101  
.102  
.102  
.103  
.103  
.104  
.104  
.104  
.104  
.105  
.105  
.105  
.105  
.106  
.106  
.106  
.106  
.107  
.107  
.107  
.107  
.107  
.107  
μA  
1000  
1000  
500  
500  
200  
200  
50  
50  
10  
10  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1N5629  
1N5629A  
1N5630  
1N5630A  
1N5631  
1N5631A  
1N5632  
1N5632A  
1N5633  
1N5633A  
1N5634  
1N5634A  
1N5635  
1N5635A  
1N5636  
1N5636A  
1N5637  
1N5637A  
1N5638  
1N5638A  
1N5639  
1N5639A  
1N5640  
1N5640A  
1N5641  
1N5641A  
1N5642  
1N5642A  
1N5643  
1N5643A  
1N5644  
1N5644A  
1N5645  
1N5645A  
1N5646  
1N5646A  
1N5647  
1N5647A  
1N5648  
1N5648A  
1N5649  
1N5649A  
1N5650  
1N5650A  
1N5651  
1N5651A  
1N5652  
1N5652A  
1N5653  
1N5653A  
1N5654  
1N5654A  
1N5655  
1N5655A  
1N5656  
1N5656A  
1N5657  
1N5657A  
1N5658  
1N5658A  
1N5659  
1N5659A  
1N5660  
1N5660A  
6.12  
6.45  
6.75  
7.13  
7.38  
7.79  
8.19  
8.65  
9.00  
9.5  
7.48  
7.14  
8.25  
7.88  
9.02  
8.61  
10.0  
9.55  
11.0  
10.5  
12.1  
11.6  
13.2  
12.6  
14.3  
13.7  
16.5  
15.8  
17.6  
16.8  
19.8  
18.9  
22.0  
21.0  
24.2  
23.1  
26.4  
25.2  
29.7  
28.4  
33.0  
31.5  
36.3  
34.7  
39.6  
37.8  
42.9  
41.0  
47.3  
45.2  
51.7  
49.4  
56.1  
53.6  
61.6  
58.8  
68.2  
65.1  
74.8  
71.4  
82.5  
78.8  
90.2  
86.1  
100.0  
95.5  
110  
5.50  
5.80  
6.05  
6.40  
6.63  
7.02  
7.37  
7.78  
8.10  
8.55  
8.92  
9.40  
9.72  
10.2  
10.5  
11.1  
12.1  
12.8  
12.9  
13.6  
14.5  
15.3  
16.2  
17.1  
17.8  
18.8  
19.4  
20.5  
21.8  
23.1  
24.3  
25.6  
26.8  
28.2  
29.1  
30.8  
31.6  
33.3  
34.8  
36.8  
38.1  
40.2  
41.3  
43.6  
45.4  
47.8  
50.2  
53.0  
55.1  
58.1  
60.7  
64.1  
66.4  
70.1  
73.7  
77.8  
81.0  
85.5  
89.2  
94.0  
97.2  
102  
10.8  
10.5  
11.7  
11.3  
12.5  
12.1  
13.8  
13.4  
15.0  
14.5  
16.2  
15.6  
17.3  
16.7  
19.0  
18.2  
22.0  
21.2  
23.5  
22.5  
26.5  
25.2  
29.1  
27.7  
31.9  
30.6  
34.7  
33.2  
39.1  
37.5  
43.5  
41.4  
47.7  
45.7  
52.0  
49.9  
56.4  
53.9  
61.9  
59.3  
67.8  
64.8  
73.5  
70.1  
80.5  
77.0  
89.0  
85.0  
98.0  
92.0  
108  
139  
143  
128  
132  
120  
124  
109  
112  
100  
103  
93  
96  
87  
90  
79  
82  
68  
71  
64  
9.9  
10.5  
10.8  
11.4  
11.7  
12.4  
13.5  
14.3  
14.4  
15.2  
16.2  
17.1  
18.0  
19.0  
19.8  
20.9  
21.6  
22.8  
24.3  
25.7  
27.0  
28.5  
29.7  
31.4  
32.4  
34.2  
35.1  
37.1  
38.7  
40.9  
42.3  
44.7  
45.9  
48.5  
50.4  
53.2  
55.8  
58.9  
61.2  
64.6  
67.5  
71.3  
73.8  
77.9  
81.9  
86.5  
90  
67  
56.5  
59.5  
51.5  
54  
47  
49  
43  
45  
38.5  
40  
34.5  
36  
31.5  
33  
29  
30  
26.5  
28  
24  
25.3  
22.2  
23.2  
20.4  
21.4  
18.6  
19.5  
16.9  
17.7  
15.3  
16.3  
13.9  
14.6  
12.7  
13.3  
11.4  
12.0  
10.4  
11.0  
9.5  
103  
118  
113  
131  
125  
144  
137  
158  
152  
173  
165  
187  
95  
99  
105  
108  
114  
117  
124  
105  
121  
116  
132  
126  
143  
137  
9.9  
8.7  
9.1  
8.0  
105  
111  
1
5
179  
8.4  
T4-LDS-0096 Rev. 2 (101572)  
Page 3 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
ELECTRICAL CHARACTERISTICS @ TA = 25oC  
Breakdown  
Voltage  
Breakdown  
Current  
I(BR)  
Rated  
Standoff  
Voltage  
VWM  
Maximum  
Standby  
Current  
ID @ VWM  
Maximum  
Clamping  
Voltage  
Maximum  
Peak Pulse  
Current  
IPP  
Maximum  
Temperature  
Coefficient of  
V(BR) αV(BR)  
JEDEC  
Type  
No.*  
V(BR) @ I(BR)  
VC @ IPP  
Min.  
Max.  
V
V
mA  
1
1
1
1
V
V
A
%/oC  
.108  
.108  
.108  
.108  
μA  
5
5
5
5
1N5661  
1N5661A  
1N5662  
135  
143  
144  
152  
165  
158  
176  
168  
121  
128  
130  
136  
215  
207  
230  
219  
7.0  
7.2  
6.5  
6.8  
1N5662A  
1N5663  
1N5663A  
1N5664  
153  
162  
162  
171  
187  
179  
198  
189  
1
1
1
1
138  
145  
146  
154  
5
5
5
5
244  
234  
258  
246  
6.2  
6.4  
5.8  
6.1  
.108  
.108  
.108  
.108  
1N5664A  
1N5665  
1N5665A  
180  
190  
220  
210  
1
1
162  
171  
5
5
287  
274  
5.2  
5.5  
.108  
.108  
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” VWM that should be equal to or  
greater than the dc or continuous peak operating voltage level.  
NOTE 2: Also available in military qualified types with a JAN, JANTX, or JANTXV prefix.  
SYMBOLS & DEFINITIONS  
Symbol  
Definition  
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1  
above.)  
VWM  
V(BR)  
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC  
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when  
subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is  
the combination of voltage rise due to both the series resistance and thermal rise and positive  
VC  
temperature coefficient (αV(BR)  
)
IPP  
PPP  
ID  
Peak Pulse Current: The peak current during the impulse (See Figure 2)  
Peak Pulse Power: The pulse power as determined by the product of VC and IPP  
Standby Current: The current at the standoff voltage (VWM  
)
I(BR)  
Breakdown Current: The current used for measuring Breakdown Voltage (V(BR)  
)
T4-LDS-0096 Rev. 2 (101572)  
Page 4 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
GRAPHS  
100  
Exponential wave-form  
(See FIG. 2)  
10  
Square-wave pulse  
Pulse time duration (tp) is  
defined as that point  
where IP decays to 50% of  
peak value (I
PP
).  
Peak Value  
IPP  
1.0  
0.1Kw  
100ns  
1μs  
10μs  
100μs  
1ms  
10ms  
Pulse Time (tp )  
Time (t) in milliseconds  
FIG. 1 – Non-repetitive peak pulse power rating curve  
FIG. 2 Pulse wave form for exponential surge  
NOTE: Peak power defined as peak voltage times peak current  
TL – lead Temperature  
FIG. 3 Steady-state power derating curve  
TA Ambient Temperature oC  
FIG. 4 Derating Curve  
T4-LDS-0096 Rev. 2 (101572)  
Page 5 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PACKAGE DIMENSIONS  
NOTES:  
1. Dimensions are in inches.  
Dimensions  
Inches Millimeters Notes  
Min  
Symbol  
2. Millimeters are given for general information only.  
3. The major diameter is essentially constant along its length.  
4. Within this zone, diameter may vary to allow for lead finishes  
and irregularities.  
5. Dimension to allow for pinch or seal deformation anywhere  
along tubulation.  
6. Lead 1 (cathode) shall be electrically connected to the case.  
7. In accordance with ASME Y14.5M, diameters are equivalent  
to φx symbology.  
Max  
.235  
.357  
.570  
.100  
.035  
Min  
5.46  
7.44  
Max  
5.97  
9.07  
14.48  
2.54  
0.89  
BD  
BL  
BLT  
CD  
LD  
LL  
.215  
.293  
3
5
.045  
.025  
1.14  
0.64  
1.000 1.625 25.40 41.28  
.188 4.78  
4
4
LU  
FIGURE 1. Physical dimensions (DO-13).  
T4-LDS-0096 Rev. 2 (101572)  
Page 6 of 6  

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