1N485B [MICROSEMI]
High Conductance DO-35 Diodes; 高电导率DO- 35二极管
| 型号： | 1N485B |
| 厂家： | 
Microsemi |
| 描述： | High Conductance DO-35 Diodes |
| 文件： | 总1页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N482B
High Conductance
DO-35 Diodes
thru
1N486B
Use Advantages
Used as a general purpose diode in power supplies, or in clipping and steering
applications. Operation at temperatures up to 200 degrees C, no derating.
Can be used in harsh environments where hermeticity and low cost are
important. Compatible with all major automatic pick and place mounting
equipment. May be used on ceramic boards along with high temperature IR
solder reflow.
Features
DO-35 Glass Package
Humidity proof glass
Lead Dia.
0.018-0.022"
0.458-0.558 mm
Thermally matched system
No thermal fatigue
No applications restrictions
Dia.
0.06-0.09"
1.0"
25.4 mm
(M in.)
Length
0.120-.200"
3.05-5.08- mm
Sigma Bond™ plated contacts
100% guaranteed solderability
Problem free assembly
1.53-2.28 mm
Six Sigma quality
LL-35 MiniMELF types available
Absolute Maximum Ratings
Symbol
Value
0.65
Unit
AverageForwardRectifiedCurrentatTAmbient =25o C
Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)
JunctionTemperatureRange
IAV
IFSM
Tj
Amp
Amps
oC
2.0
-65 to +200
-55 to +200
250
StorageTemperatureRange
TS
oC
Max.AveragePowerDissipation
Pdiss
mW
Characteristics at T = 25oC
Peak
Maximum
Maximum
Maximum Leakage
Minimum
Inverse Voltage
Average Rectified
Forward Voltage
Current
Saturation
(MIN.)
Current
Drop
(IR) @ PIV
Voltage
(PIV)
Volts
30
(IO)
Amps
0.2
0.2
0.2
(VF) @ 0.1A
Volts
1.0
25oC
150oC
(@0.1 mA)
Volts
40
Type
µA
µA
5
1N482B
1N483B
1N484B
1N485B
1N486B
0.025
0.025
0.025
0.025
0.025
60
1.0
1.0
1.0
1.0
5
5
5
5
80
150
200
250
125
175
225
0.2
0.2
LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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